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STP80N70F4
N-channel 68 V, 8.2 mΩ typ., 85 A STripFET™ DeepGATE™
Power MOSFET in TO-220 package
Datasheet — production data
Features
Order code
STP80N70F4
VDSS
68 V
RDS(on) max
< 9.8 mΩ
ID
85 A
N-channel enhancement mode
100% avalanched rated
Low gate charge
Very low on-resistance
Application
Switching applications
Description
This device is an N-channel Power MOSFET
developed using ST’s STripFET™ DeepGATE™
technology. The device has a new gate structure
and is specially designed to minimize on-state
resistance to provide superior switching
performance.
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STP80N70F4
Marking
80N70F4
Package
TO-220
Packaging
Tube
December 2012
This is information on a product in full production.
Doc ID 18377 Rev 2
1/12
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Contents
Contents
STP80N70F4
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
............................ 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 18377 Rev 2

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STP80N70F4
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID
IDM (1)
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
EAS (2) Single pulse avalanche energy
Tstg Storage temperature
Tj Operating junction temperature
1. Pulse width limited by safe operating area
2. Starting Tj = 25 °C, ID= 35 A, VDD= 34 V
Table 3.
Symbol
Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-a Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
68
± 20
85
60
340
150
1
185
- 55 to 175
Unit
V
V
A
A
A
W
W/°C
mJ
°C
Value
1
62.5
300
Unit
°C/W
°C/W
°C
Doc ID 18377 Rev 2
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Electrical characteristics
2 Electrical characteristics
STP80N70F4
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Drain-source
V(BR)DSS Breakdown voltage
IDSS
Zero gate voltage
Drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source
on-resistance
Test conditions
ID = 250 µA, VGS = 0
VDS = 68 V
VDS = 68 V,TC=125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
Min. Typ. Max. Unit
68 V
1 µA
100 µA
±100 nA
2 4V
8.2 9.8 mΩ
Table 5.
Symbol
Dynamic
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 34 V, ID = 80A,
VGS = 10 V
(see Figure 14)
Min. Typ. Max. Unit
5600
pF
- 430 - pF
250 pF
90 nC
- 25 - nC
23 nC
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 34 V, ID = 40A
RG = 4.7 Ω VGS = 10 V
(see Figure 13)
Min.
-
-
Typ.
25
36
80
25
Max. Unit
ns
-
ns
ns
-
ns
4/12 Doc ID 18377 Rev 2

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STP80N70F4
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 85 A, VGS = 0
ISD = 80 A,
VDD = 54.4 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
- 85 A
- 340 A
- 1.5 V
55
- 130
4
ns
nC
A
Doc ID 18377 Rev 2
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