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IN93AA86N, IN93AA86D
16K-BIT SERIAL EEPROM WITH MICROWIRE INTEFACE
(compatible to САТ93С86 Catalyst)
DESCRIPTION
The IN93LC86 is a Electric erasable programmable ROM (EEPROM) memory data capac-
ity 4K (2048x8 or 1024x16) with 3-wire interface.
There are 3 modification of ICs
A: ICs IN93AA86AD/AN are 8 bits registers (2048х8) - ORG pin not used
B: ICs IN93AA86BD/BN are 16 bits registers (1024х16) - ORG pin not used
C: ICs IN93AA86CN/CD are configured as either registers of 8 bits (ORG pin at GND) or
16 bits (ORG pin at VCC, or not connected). Each register can be written (or read) serially
by using the DI (or DO) pin.
The ICs is purposed for reading, writing & nonvolatile data storage. ICs can be used in
TV-sets, telecom equipment & consumer electronic devices.
FEATURES
100 year data (16K) retention for Ta=25oC;
Single power supply source (VСС = 1,8 V – 6,0 V);
Build-in voltage multiplier;
Serial I/O bus;
Autoincrement of address word;
Self-timed write cycle;
1,000,000 Program/erase cycles;
Power-up internal logic setup;
Read cycles quantity are not limited;
Low power consumption;
Operating temperature range -40 … +85 oC.
N SUFFIX
DIP
8
1 D SUFFIX
8 SOIC
1
PIN FUNCTIONS
Pin
Name
Function
CS Chip Select
CS 01
08 Vcc
SK Clock Input
DI Serial Data Input
SK 02
07 NC (ORG)
DO
VCC
GND
ORG
Serial Data Output
+1.8 to 6.0V Power Supply
Ground
Memory Organization pin *
DI 03
DO 04
06 ORG
05 GND
NC No Connection
Note
* this pin is present only in IN93AA86CN, IN93AA86CD:
When the ORG pin is connected to VCC, the x16 organization is selected.
When it is connected to ground, the x8 pin is selected.
If the ORG pin is left unconnected, then an internal pullup device will select the x16 organization.
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IN93AA86N, IN93AA86D
IN93AA86AN/AD, IN93AA86BN/BD, IN93AA86CN/CD Block Diagram
Recommended Operation Conditions & Maximum Ratings*
Parameter, unit
Supply voltage,V
High level input 4,5 V Ucc 5,5 V
voltage, V
1,8 V Ucc < 4,5 V
Low level input 4,0 V Ucc 5,5 V
voltage, V
1,8 V Ucc < 4,0 V
Low level output current мА
Output short-circuit current, mA
1) Time not more than 1 sec
Symbol
UCC
UIH
UIL
IOL
IOS 1)
Recommended
Operation Conditions
Min Max
1,8 6,0
2,0
0,7Ucc
Ucc + 1,0
Ucc + 1,0
-0,1 0,8
0 0,2Ucc
– 2,1
––
Maximum Ratings
Min
- 0,5
Max
7,0
-0,5 Ucc + 1,0
- 0,5
100
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IN93AA86N, IN93AA86D
Electric Parameters
Parameter, unit
Low level output voltage, V
Symbol
UOL1
High level output voltage, V
UOH1
Low level output voltage, V
UOL2
High level output voltage, V
UOH2
Low level input leakage current, uA
High level input leakage current, uA
IILL
IILH
Low level output leakage current,
uA
IOLL
High level output leakage current,
uA
IOLH
Consumption current (8-bit mode),
uA
IN93AA86CN, IN93AA86CD
IN93AA86AN, IN93AA86AD
Consumption current (16-bit mode),
uA
ICC1
ICC2
IN93AA86CN, IN93AA86CD
IN93AA86AN, IN93AA86AD
Consumption current (Operating
Read), uA
Consumption current (Operating
Write/Erase), mA
IOCC R
IOCC E/W
tPD0
Output Delay to Low, ns
Output Delay to High, ns
tPD1
Mode
4,5 V UCC 5,5 V
IOL = 2,1 mA
4,5 V UCC 5,5 V
IOH = -400 uA
1,8 V UCC < 4,5 V
IOL = 1 mA
1,8 V UCC < 4,5 V
IOH = -100 uA
1,8 V UCC 6,0 V
UI = Ucc
1,8 V UCC 6,0 V
UO = Ucc
UCS = 0 V
1,8 V UCC 6,0 V
UO = Ucc
UCS = 0 V
1,8 V UCC 6,0 V
Ucc = 5,5 V
UCS = 0 V
UORG = 0 V
ORG not connected
Ucc = 5,5 V
UCS = 0 V
UORG = Ucc or
ORG not connected
ORG not connected
Ucc = 5,0 V
fC = 1 MHz
Ucc = 5,0 V
fC = 1 MHz
4,5 V UCC 6,0 V
fC = 3 MHz
2,5 V UCC 6,0 V
fC = 1 MHz
1,8 V UCC 6,0 V
fC = 0,5 MHz
4,5 V UCC 6,0 V
fC = 3 MHz
2,5 V UCC 6,0 V
fC = 1 MHz
1,8 V UCC 6,0 V
fC = 0,5 MHz
Min
2,4
UCC-0,2
Max
0,4
0,2
-1,0
1,0
-1,0
TA, °С
25 ± 10;
-45; 85
– 1,0
– 10
– 10
– 500
– 3,0
– 150
– 500
– 1000
– 150
– 500
– 1000
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IN93AA86N, IN93AA86D
Parameter, unit
Output Delay to High-Z, ns
Symbol
tHZ
Write/Erase cycle, ms
tCY
Output Delay to Status Check, ns
tSV
Power-up to Read Operation Time,
ms
tPUR
Power-up to Wtite Operation Time,
ms
tPUW
Program/erase cycles
NE/W
Mode
4,5 V UCC 6,0 V
fC = 3 MHz
2,5 V UCC 6,0 V
fC = 1 MHz
1,8 V UCC 6,0 V
fC = 0,5 MHz
4,5 V UCC 6,0 V
fC = 3 MHz
2,5 V UCC 6,0 V
fC = 1 MHz
1,8 V UCC 6,0 V
fC = 0,5 MHz
4,5 V UCC 6,0 V
fC = 3 MHz
2,5 V UCC 6,0 V
fC = 1 MHz
1,8 V UCC 6,0 V
fC = 0,5 MHz
4,5 V UCC 6,0 V
fC = 3 MHz
2,5 V UCC 6,0 V
fC = 1 MHz
1,8 V UCC 6,0 V
fC = 0,5 MHz
4,5 V UCC 6,0 V
fC = 3 MHz
2,5 V UCC 6,0 V
fC = 1 MHz
1,8 V UCC 6,0 V
fC = 0,5 MHz
Ucc = 5,0 V
Min
1000000
Max
100
200
400
10
10
10
100
500
1000
1,0
1,0
1,0
1,0
1,0
1,0
TA, °С
25 ± 10;
-40; 85
25 ± 10
Notes
1.tPUR & tPUW times are delays from of power up to operation started
2. UCS, UORG – voltages applied to CS, ORG pins
3-wire Interface Parameters (-40 oC ≤ ТA 85 oC, CL=100 pF)
Symbol
Parameter, unit
fС
tCSS
tСSH
tDIS
tDIH
tCS MIN
tSKHI
tSKLOW
Clock frequency, MHz
CS Setup Time, ns
CS Hold Time, ns
DI Setup Time, ns
DI Hold Time, ns
Minimum CS Low Time, ns
Minimum SK High Time, ns
Minimum SK Low Time, ns
1,8VUCC6,0V
Min Max
- 0,25
2,5VUCC6,0
V
Min Max
- 0,5
4,5VUCC6,0V
Min Max
-2
200 -
100
-
50
-
0- 0 - 0-
200 -
100
-
50
-
200 -
100
-
50
-
1000 - 500 - 150 -
1000 - 500 - 150 -
1000 - 500 - 150 -
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IN93AA86N, IN93AA86D
Instruction Set
Start
Instruction Bit
READ
1
ERASE
1
WRITE
1
EWEN
EWDS
ERAL
1
1
1
WRAL
1
Op-
code
10
11
01
00
00
00
00
Address
x8
x16
A10-A0
A9-A0
A10-A0
A9-A0
A10-A0
11XXXXXXXХХ
00XXXXXXXХХ
10XXXXXXXХХ
A9-A0
11XXXXXXХХ
00XXXXXXХХ
10XXXXXXХХ
01XXXXXXXХХ 01XXXXXXХХ
Data
x8 x16
D7-D0 D15-D0
D7-D0 D15-D0
Comments
Read Address
AN- АО
Clear Address
AN- АО
Write Address
AN- АО
Write Enable
Write Disable
Clear All
Addresses
Write All
Addresses
There are 7 instructions to execute WRITE, ERASE or READ operation
The format for all instructions sent to the device is a logical "1" start bit, a 2-bits (or 4-bits) opera-
tion code, 10-bit address (1024х16)/ 11-bit address (2048x8).
A 16-bit data field (organization 1024х16) or 8-bit data field (organization 4058x8) is addi-
tionally required for write operations.
Read Instruction Timing
EWEN/EWDS Instruction Timing
The IN93AA86 powers up switch IC to the write disable state. Any writing after power-up
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