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P-Channel 20-V (D-S) MOSFET
Si6473DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0125 at VGS = - 4.5 V
- 20 0.016 at VGS = - 2.5 V
0.0215 at VGS = - 1.8 V
ID (A)
- 9.5
- 8.5
- 7.3
FEATURES
Halogen-free
• TrenchFET® Power MOSFETs
S*
RoHS
COMPLIANT
TSSOP-8
D1
S2
S3
G4
Si6473DQ
8D
7S
6S
5D
Top View
Ordering Information: Si6473DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 9.5
- 5.9
- 6.2
- 4.9
Pulsed Drain Current (10 µs Pulse Width)
IDM - 30
Continuous Source Current (Diode Conduction)a
IS
- 1.5
- 0.95
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.75 1.08
1.14 0.69
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
55
95
35
Maximum
70
115
45
Unit
°C/W
Document Number: 71164
S-81056-Rev. C, 12-May-08
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Si6473DQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = - 16 V, VGS = 0 V
VDS = - 16 V, VGS = 0 V, TJ = 70 °C
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 9.5 A
VGS = - 2.5 V, ID = - 8.5 A
VGS = - 1.8 V, ID = - 7.5 A
VDS = - 15 V, ID = - 9.5 A
IS = - 1.5 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = - 10 V, VGS = - 5 V, ID = - 9.5 A
VDD = - 10 V, RL = 15 Ω
ID - 1 A, VGEN = - 4.5 V, RG = 6 Ω
IF = - 1.5 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
- 0.45
20
± 100
-1
- 10
0.010
0.013
0.0175
45
- 0.64
0.0125
0.016
0.0215
- 1.1
V
nA
µA
A
Ω
S
V
47.5
7.6
7.6
42
33
220
95
50
70
60
50
330
140
80
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 30
VGS = 5 thru 2 V
24
18
1.5 V
24
18
12 12
6
1V
0
0 3 6 9 12
VDS - Drain-to-Source Voltage (V)
Output Characteristics
6
0
0
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2.0
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Document Number: 71164
S-81056-Rev. C, 12-May-08

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Si6473DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
10000
0.025
0.020
0.015
0.010
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0.005
0
0 6 12 18 24
ID - Drain Current (A)
On-Resistance vs. Drain Current
5
VDS = 10 V
ID = 9.5 A
4
30
8000
6000
Ciss
4000
2000
Coss
Crss
0
0 3 6 9 12
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 4.5 V
ID = 9.5 A
1.4
15
3 1.2
2 1.0
1 0.8
0
0
30
10 20 30 40
Qg - Total Gate Charge (nC)
Gate Charge
50
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.04
TJ = 150 °C
10
0.03
0.02
ID = 9.5 A
TJ = 25 °C
0.01
1
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71164
S-81056-Rev. C, 12-May-08
0
02468
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si6473DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4 60
0.2
ID = 250 µA
0.0
50
40
30
- 0.2
20
10
- 0.4
- 50 - 25
2
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
1
Duty Cycle = 0.5
0
10-2
10-1
1
10 100
Time (s)
Single Pulse Power, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 95 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71164.
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Document Number: 71164
S-81056-Rev. C, 12-May-08

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Revision: 02-Oct-12
1 Document Number: 91000