B1109.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 B1109 데이타시트 다운로드

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2SB1109, 2SB1110
Silicon PNP Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610
Outline
TO-126 MOD
123
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
1. Emitter
2. Collector
3. Base
Ratings
2SB1109
–160
–160
–5
–100
1.25
150
–45 to +150
2SB1110
–200
–200
–5
–100
1.25
150
–45 to +150
Unit
V
V
V
mA
W
°C
°C

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2SB1109, 2SB1110
Electrical Characteristics (Ta = 25°C)
2SB1109
2SB1110
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–160 —
–200 —
—V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–160 —
–200 —
—V
IC = –1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO –5 — — –5 — — V
IE = –10 µA, IC = 0
Collector cutoff current ICBO
DC current tarnsfer
ratio
h *1
FE1
— — –10 — — — µA VCB = –140 V, IE = 0
— — — — — –10 µA VCE = –160 V, IE = 0
60 — 320 60 — 320
VCE = –5 V, IC = –10
mA
hFE2
Base to emitter voltage VBE
Collector to emitter
saturation voltage
VCE(sat)
30 — — 30 — —
— — –1.5 — — –1.5 V
— — –2 — — –2 V
VCE = –5 V, IC = –1 mA
IC = –5 V, IC = –10 mA
IC = –30 mA, IB = –3
mA
Gain bandwidth product fT
— 140 — — 140 — MHz VCE = –5 V, IC = –10
mA
Collector output
capacitance
Cob — 5.5 — — 5.5 — pF VCB = –10 V, IE = 0, f =
1 MHz
Note: 1. The 2SB1109 and 2SB1110 are grouped by hFE1 as follows.
B
60 to 120
CD
100 to 200 160 to 320
Maximum Collector Dissipation Curve
1.5
1.0
0.0
0 50 100 150
Ambient Temperature Ta (°C)
Typical Output Characteristics
–20
–16 –120
–110
–100
–12 –90
–80
–70
–8 –60
–50
–40
–4 –30
–20
–10 µA
IB = 0
0 –2 –4 –6 –8 –10
Collector to emitter Voltage VCE (V)
2

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2SB1109, 2SB1110
Typical Transfer Characteristics
–100
VCE = –5 V
–50
–20
–10
–5
–2
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base to emitter voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
500
VCE = –5 V
200
Ta = 75°C
100
50
25
–25
20
10
5
–1 –2
–5 –10 –20 –50 –100
Collector current IC (mA)
Saturation Voltage vs. Collector Current
–5
lC = 10 lB
–2
–1.0 VBE (sat) TC = –25°C
–0.5
–0.2
–0.1
25 75
VCE (sat)
–0.05
–1 –2
–5
75
25
TC = –25°C
–10 –20 –50 –100
Collector current IC (mA)
Gain Gandwidth Product vs.
Collector Current
500
VCE = –10 V
200
100
50
20
10
5
–0.5 –1.0 –2
–5 –10 –20
Collector current IC (mA)
–50
Collector Output Capacitance vs.
Collector to Base Voltage
50
f = 1 MHz
IE = 0
20
10
5
2
1.0
0.5
–1 –2
–5 –10 –20 –50 –100
Collector to base voltage VCB (V)
3