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2SB1109, 2SB1110
Silicon PNP Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610
Outline
TO-126 MOD
123
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
1. Emitter
2. Collector
3. Base
Ratings
2SB1109
–160
–160
–5
–100
1.25
150
–45 to +150
2SB1110
–200
–200
–5
–100
1.25
150
–45 to +150
Unit
V
V
V
mA
W
°C
°C

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2SB1109, 2SB1110
Electrical Characteristics (Ta = 25°C)
2SB1109
2SB1110
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–160 —
–200 —
—V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–160 —
–200 —
—V
IC = –1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO –5 — — –5 — — V
IE = –10 µA, IC = 0
Collector cutoff current ICBO
DC current tarnsfer
ratio
h *1
FE1
— — –10 — — — µA VCB = –140 V, IE = 0
— — — — — –10 µA VCE = –160 V, IE = 0
60 — 320 60 — 320
VCE = –5 V, IC = –10
mA
hFE2
Base to emitter voltage VBE
Collector to emitter
saturation voltage
VCE(sat)
30 — — 30 — —
— — –1.5 — — –1.5 V
— — –2 — — –2 V
VCE = –5 V, IC = –1 mA
IC = –5 V, IC = –10 mA
IC = –30 mA, IB = –3
mA
Gain bandwidth product fT
— 140 — — 140 — MHz VCE = –5 V, IC = –10
mA
Collector output
capacitance
Cob — 5.5 — — 5.5 — pF VCB = –10 V, IE = 0, f =
1 MHz
Note: 1. The 2SB1109 and 2SB1110 are grouped by hFE1 as follows.
B
60 to 120
CD
100 to 200 160 to 320
Maximum Collector Dissipation Curve
1.5
1.0
0.0
0 50 100 150
Ambient Temperature Ta (°C)
Typical Output Characteristics
–20
–16 –120
–110
–100
–12 –90
–80
–70
–8 –60
–50
–40
–4 –30
–20
–10 µA
IB = 0
0 –2 –4 –6 –8 –10
Collector to emitter Voltage VCE (V)
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2SB1109, 2SB1110
Typical Transfer Characteristics
–100
VCE = –5 V
–50
–20
–10
–5
–2
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base to emitter voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
500
VCE = –5 V
200
Ta = 75°C
100
50
25
–25
20
10
5
–1 –2
–5 –10 –20 –50 –100
Collector current IC (mA)
Saturation Voltage vs. Collector Current
–5
lC = 10 lB
–2
–1.0 VBE (sat) TC = –25°C
–0.5
–0.2
–0.1
25 75
VCE (sat)
–0.05
–1 –2
–5
75
25
TC = –25°C
–10 –20 –50 –100
Collector current IC (mA)
Gain Gandwidth Product vs.
Collector Current
500
VCE = –10 V
200
100
50
20
10
5
–0.5 –1.0 –2
–5 –10 –20
Collector current IC (mA)
–50
Collector Output Capacitance vs.
Collector to Base Voltage
50
f = 1 MHz
IE = 0
20
10
5
2
1.0
0.5
–1 –2
–5 –10 –20 –50 –100
Collector to base voltage VCB (V)
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2SB1109, 2SB1110
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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2SB1109, 2SB1110
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Hitachi Europe GmbH
Semiconductor & IC Div.
Electronic Components Group
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USA
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München
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Tel: 089-9 91 80-0
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.
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Electronic Components Div.
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Whitebrook Park
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United Kingdom
Tel: 0628-585000
Fax: 0628-778322
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Hong Kong
Tel: 27359218
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