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WPM2009D
-20V, -4A, 42mŸ, 2.0W, DFN3x3, P-MOSFET
Descriptions
This single P-Channel MOSFET is produced
using trench process that provides minimum on
resistance performance. WPM2009D is
enhancement power MOSFET with 2.0W power
dissipation mounting 1 in2 pad in a DFN3x3
package. This device is suited for high power
charging circuit of mobile phone application. It
also can be used in a high power switching
application.
WPM2009D
Http://www.willsemi.com
Bottom
DFN3x3-8L
Bottom
Features
z Max Rds(on) 42mŸ @ Vgs=-4.5V
z Max Vds
-20V
z Max Current
-4.0A
z Typical Vgs(th) -0.65V @ Id=-250uA
z Power Dissipation 2.0W (Note2)
z High performance Trench process
z DFN3x3-8L Package
z Pb-Free
Applications
z Battery charging
z Load Switch
z Power Switch
z DC-DC converter
Pin Connection
Top
WPM2009 = Part Number
YY = Year
WW = Week
Marking
Order Information
Device
Package
Shipping
WPM2009D-8/TR DFN3x3-8L 3000/Tape&Reel
Will Semiconductor Ltd.
1
Jan,2012 - Rev. 1.4

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Maximum Ratings
(TA=25oC unless otherwise noted)
Symbol Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Drain Current – Continue Note1
Drain Current – Continue (t<5s) Note1
ID
Drain Current – Continue Note2
Drain Current – Pulsed (t<300us, Duty<2%) Note2
Power Dissipation – Note1
PD Power Dissipation – (t<5s) Note1
Power Dissipation – Note2
TJ Operation junction temperature range
TSG Storage temperature range
WPM2009D
Ratings
-20
Œ12
-4.0
-4.9
-6.5
-24
1.0
1.5
2.0
150
-55~150
Unit
V
V
A
A
A
A
W
W
W
OC
OC
Thermal Resistance Ratings
Symbol Parameter
RTJA Thermal Resistance, Junction to Ambient – Note1
RTJA Thermal Resistance, Junction to Ambient – Note2
Max.
125
62
Unit
OC/W
OC/W
Note1: Surface mounted on a 2 OZ copper, recommend minimum pad, FR-4 board.
Note2: Surface mounted on a 2 OZ copper, 1 in2 pad with dual side, FR-4 board.
Note1
Will Semiconductor Ltd.
Note2
2 Jan,2012 - Rev. 1.4

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Electronics Characteristics
(TA = 25 OC, unless otherwise noted)
Symbol Parameter
Off Characteristics
V(BR)DSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate –Source leakage current
ON Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
QG(TOT)
Total Gate Charge
QG(TH)
Threshold gate charge
QGS Gate-Source Charge
QGD Gate-Drain Charge
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Drain-to-Source Diode Characteristics
VSD Forward Diode Voltage
Test Condition
VGS=0V, ID=-250A
VDS=-16V, VGS=0V
VGS±12V , VDS=0V
VGS=VDS, ID=-250A
VGS=-4.5V, ID=-4.0A
VGS=-2.5V, ID=-3.5A
VGS=-1.8V, ID=-3.0A
VDS=-5V, ID=-3.3A
VDS=-6V, VGS=0V,
F=1.0 MHz
VDS=-6V,ID=-3.3A,
VGS=-4.5V
VGS=-4.5V, VDS=-6V,
ID= -1.0A, RG=6.0Ÿ
VGS=0V, IS=-1.6A
WPM2009D
Min Typ. Max Unit
-20 V
-1.0 uA
Œ100 nA
-0.35
-0.65
42
54
77
3.0
-1.00
59
74
93
V
mŸ
mŸ
mŸ
S
700 850 1000 pF
100 150 200
pF
80 120 150 pF
8 12 15 nC
0.4 0.6 0.8 nC
1.2 1.6 2.0 nC
1.8 2.2 2.6 nC
15 19 25 ns
5 8 15 ns
80 100 120 ns
15 25 35 ns
-0.7 V
Will Semiconductor Ltd.
3
Jan,2012 - Rev. 1.4

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Typical Performance Graph
(TA = 25 OC, unless otherwise noted)
20
VGS =-5 thru -2.5 V
16 -2 V
12
8
4
0
0
0.10
-1.5 V
1234
-VDS - Drain-to-Source Voltage (V)
Output Characteristics
-1 V
5
0.08
0.06
VGS =-2.5 V
0.04
0.02
VGS =-4.5 V
0.00
0 4 8 12 16 20
-ID - Drain Current (A)
On-Resistance vs. Drain Current
1.5
1.4 VGS =-4.5 V
ID =-4.0 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Will Semiconductor Ltd.
WPM2009D
20
TC = - 55 °C
16
25 °C
125 °C
12
8
4
0
0.0 0.5 1.0 1.5 2.0
-VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.15
2.5
0.12
0.09
0.06
ID = - 3 A
ID =-4.0 A
0.03
0.00
012345
-VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
0.3
ID = -250μA
0.2
0.1
0.0
- 0.1
- 0.2
- 50 - 25 0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
4 Jan,2012 - Rev. 1.4

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5
VDS =-6 V
4 ID =-3.3 A
3
2
1
0
0 3 6 9 12
Qg - Total Gate Charge (nC)
Gate Charge
20
10
15
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0.2 0.4
0.6 0.8 1.0 1.2
-VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
WPM2009D
1200
1000
800
Ciss
600
400
200
Crss
0
0
4
Coss
8 12 16
-VDS - Drain-to-Source Voltage (V)
Capacitance
20
100
Limited by RDS(on)*
10
IDM Limited
P(t) = 0.0001
1
ID(on)
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
0.1
TA = 25 °C
Single Pulse
P(t) = 1
P(t) = 10
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Will Semiconductor Ltd.
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient
Impedance, Junction-to-Ambient
10
100 600
5 Jan,2012 - Rev. 1.4