WPM2031.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 WPM2031 데이타시트 다운로드

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WPM2031
WPM2031
Single P-Channel, -20V, -0.65A, Power MOSFET
Http://www.sh-willsemi.com
VDS (V)
-20
Rds(on) ()
0.495@ VGS=4.5V
0.665@ VGS=2.5V
0.882@ VGS=1.8V
ESD Protected
Descriptions
The WPM2031 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2031 is Pb-free and
Halogen-free.
Features
D
S
G
SOT-723
D
3
12
GS
Pin configuration (Top view)
3
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-723
Applications
1*
1
2
1 =Device Code
* = Month(A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Device
WPM2031-3/TR
Package
SOT-723
Shipping
8000/Reel&Tape
Will Semiconductor Ltd.
1
2015/08/24- Rev. 1.2

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Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WPM2031
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
-20
±5
-0.65
-0.60
-0.52
-0.48
0.42
0.36
0.27
0.23
-0.55
-0.51
-0.44
-0.41
0.30
0.26
0.19
0.17
-1.0
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
280
345
400
245
280
Maximum
340
410
470
280
340
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380µs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd.
2
2015/08/24- Rev. 1.2

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Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Drain-to-source On-resistance b, c
RDS(on)
Forward Transconductance
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
gFS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
td(ON)
tr
td(OFF)
tf
VSD
Test Conditions
VGS = 0 V, ID = -250uA
VDS =-16V, VGS = 0V
VDS = 0 V, VGS = ±5V
VGS = VDS, ID = -250uA
VGS = -4.5V, ID = -0.45A
VGS = -2.5V, ID = -0.35A
VGS = -1.8V, ID = -0.25A
VDS = -5 V, ID =-0.45A
VGS = 0 V,
f = 100 KHz,
VDS = -10 V
VGS = -4.5 V,
VDS = -10 V,
ID = -0.45A
VGS = -4.5 V,
VDS = -10 V,
ID=-0.45A
RG=6
VGS = 0 V, IS = -0.15A
WPM2031
Min Typ Max Unit
-20 V
-1 uA
±5 uA
-0.44
-0.65
495
665
882
1.25
-0.81
853
1053
1303
V
m
S
74.5
10.8
10.2
1.67
0.17
0.30
0.59
pF
nC
0.50
1.76
us
7.0
8.5
-0.75 -1.5
V
Will Semiconductor Ltd.
3
2015/08/24- Rev. 1.2

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Typical Characteristics (Ta=25oC, unless otherwise noted)
2.0 1500
VGS= -2.5 ~ -5V VGS= -2.0V
VDS= -5V
1200
1.5
900
1.0 VGS= -1.5V
600
WPM2031
T=-500C
T=250C
0.5
0.0
012345
-VDS_Drain to Source Voltage (V)
300
0
0.0
T=1250C
0.3 0.6 0.9 1.2 1.5
-VGS - Gate to Drain Voltage (V)
1.8
Output characteristics
Transfer characteristics
1000
800
VGS=-2.5V
VGS=-4.5V
1500
1200
ID=-0.45A
600 900
400
200
0.2 0.4 0.6 0.8
-IDS-Drain-to-Source Current(A)
1.0
On-Resistance vs. Drain current
700
VGS=-4.5V IDS=-0.45A
600
500
400
300
-50
0 50 100
Temperature (0C)
150
On-Resistance vs. Junction temperature
600
300
1.5
2.0 2.5 3.0 3.5 4.0
-VGS-Gate-to-Source Voltage(V)
4.5
On-Resistance vs. Gate-to-Source voltage
0.8
0.7 IDS= -250uA
0.6
0.5
0.4
0.3
0.2
-25 0 25 50 75 100 125
Temperature (0C)
Threshold voltage vs. Temperature
150
Will Semiconductor Ltd.
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2015/08/24- Rev. 1.2

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WPM2031
120
VGS=0V
f=100KHZ
90
60
Cin
Cout
30 Crss
0
0 2 4 6 8 10
-VDS - Drain to Source Voltage (V)
Capacitance
4.5
4.0 VDS=-10V,ID=-0.45A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
- Qg (nC)
Gate Charge Characteristics
250
200
T=1250C
150
100
T=250C
50
0.4 0.5 0.6 0.7 0.8 0.9
-VSD - Source to Drain Voltage(V)
Body diode forward voltage
10
1
10 ms
0.1
Limited by RDS(on)
0.01
100 ms
1s
10 s
DC
0.001
TA = 25 °C
Single Pulse
0.1 1 10
-VDS - Drain-to-Source Voltage (V)
100
Safe operating power
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 345 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
5
2015/08/24- Rev. 1.2