IZE4428.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 IZE4428 데이타시트 다운로드

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IZE4428
1К-byte EEPROM microcircuit with function of protection for
writing and programmable secret code.
Microcircuit IZE4428 is designed to use in intellectual plastic cards. Sphere of application:
medical insurance, excess control systems, member cards, smart cards.
Features:
1024 x 8 - arrangement of EEPROM;
Byte - directed addressing;
Protection of memory writing;
1024 х 1 bit arrangement of memory protection ;
Response for reset;
Minimum 10000 cycles of erasure / writing ;
Information storage time - 5 years ;
Location of contact pads and serial interface in accordance with ISO 7816 standard;
Data in memory can be changed only after introduction of correct 2-byte programmable
secret code (PSC);
Purpose of IC contact pads
CP
Symbol
Function
01 I/O Bidirectional data line (open drain )
02
CLK
clock rate input
03
RST
control input (reset )
04 Vcc supply voltage
05
GND
general
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Block diagram
IZE4428
High
voltage
multiplier
Circuit
of reset and
holding
Vcc GND
Base memory
EEPROM 1024x8 bit
protcetion memory
PROM 1024x1 bit
Decoder of lines
and column with
ampliffers
Programming
control unit
Secret
logit unit
Interface
unit
I/O RST CLK
Graphical symbol of IC
EE <->
02
CLK
PROM
I/O
01
03 RST
Vcc
GND
04
05
Operating temperature range
Operating temperature range from -35°С to +100°С.
Extreme modes
Symbol
Name of parameter
2
Standard
Measurement

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IZE4428
min max
VСС Supply voltage
VIH Input voltage of high level
VIL Input voltage of low level
Т Operating temperature
range
4,5 5,5
3,5 VСС
0 0,8
-35 +100
unit
V
V
V
°С
Limiting modes
Symbol
VСС
VIH
VIL
Tstg
Name of parameter
Supply voltage
Input voltage of high level
Input voltage of low level
Storage temperature
Standard
min max
-0,3 6,0
- 6,0
-0,3 -
-40 +125
Measurement
unit
V
В
V
°С
They do not guarantee efficiency of ICs at limiting modes. After removal of limiting modes
they guarantee efficiency in extreme mode.
Static parameters
TA = from -35 to +100°С
Symbol
Name of parameter
VIL Input voltage of low
level
VIH Input voltage of high
level
IOL Output current of low
level
IOH Output leakage current
of high level
IIH Input current of high
level
(I/O,CLK,RST)
IСС consumption current
measurement
conditions
VСС=from 4,5 to
5,5V
VСС=from 4,5 to
5,5V
VСС=from 4,5 to
5,5V
VOL= 0,4V
VСС=5,5V
VOH=5,5V
VСС=5,5V
VIH=5,5V
VСС=5,5V,
VIL=0V, VIH=VCC
Standard
min max
0 0,8
3,5 VСС
0,5 -
- 10
- 10
- 10
unit of
measurement
V
V
mА
µА
µА
mА
Dynamic parameters
VСС= from 4,5 to 5,5V, ТA = from -35 to +100°С
Symbol
Name of parameter
Standard
min max
Unit of
measurement
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IZE4428
td1 setting up time (D/CLK)
td2 delay time (CLK/D)
td3 setting up time (CLK/RST)
td4 setting up time (RST/CLK)
td5 hold-in time (D/CLK)
td6 hold-in time (RST)
tL CLK low level
tH CLK high level
tW writing time (fс=20 kHz)
tE erasure time (fс=20 kHz)
tRE delay time
tR Time of rise front
(I/O, CLK, RST)
tF Time of fall
(I/O, CLK, RST)
4,0
6,0
4,0
4,0
20,0
10,0
10,0
5,0
5,0
9,0
-
-
-
-
-
-
-
-
-
-
-
-
-
1,0
1,0
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Memory
Memory of microcircuit consists of base memory with the structure of 1024 х 8 bit
EEPROM and protection memory with the structure of 1024 х 1 bit PROM. Every byte of
memory can be protected separately from erasure/writing by the way of programming the
corresponding bit of protection memory. They programm Bit of protection only one time
and it can not be erased.
Also microcircuit has protection with programmable secret code (PSC), which controls
excess to erasure/writing of memory. For this purpose the last three bytes of the base
memory intended for error counter (one byte with the address 1021) and PSC (two byte
with addresses 1022 and 1023).
Without verification of PSC only reading of base memory from the address 0 to address
1021 is possible (storage range of PSC is zero notated) and error counter writing. After
successful verification of PSC all base memory from address 0 to address 1023 is
readable and available for operations of erasure/writing. This state of microcircuit retain to
power supply switch off. After switching on of power supply the PSC verification procedure
should be carried out again.
After eight unsuccessful attempts to verify PSC, error counter blocks irreversibly any
possibility to change contents of memory.
Response for reset
Reset can be supplied at any time during microcircuit operates. After reset during 32-clock
pulses to the line I/O, contents of first 4 bytes of memory are read.
System of commands
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IZE4428
Base commands of introduction Base enter commands
Byte l
Byte 2
Byte 3
Operation
S0 SI S2 S3 S4 S5 A8 A9 A0-A7
D0-D7
1 0 0 0 1 1 address address input data
writing and erasure with
bits bits
protection bit
1 10011
input data
writing and erasure
without protection bit
0 00011
data compared writing of protection bit
0 0 1 1 0 0 8 and 9 0-7
with data verification
have no value reading of 9 bit, data with
protection bit
0 11100
have no value reading of 8 bit, data
without protection bit
Commands of enter for PSC verification
byte l
byte 2 byte 3
S0 S1 S2 S3 S4 S5 A8 A9 A0-A7 D0-D7
0 1 0 0 1 1 1 1 253 mask bit
1 0 1 1 0 0 1 1 254 byte 1 ПСК
1 0 1 1 0 0 1 1 255 byte 2 ПСК
operation
writing of error counter
verification of the first byte PSC
verification of the second byte PSC
In erased state memory cells shall be read as logic "1". After operation of writing memory
cells shall be read as logic "0".
There are three kind of operations of writing /erasure, that are implemented automatically
by the microcircuit:
-erasure and following writing (duration is 203 timing pulses CLK, f=20 kHz);
-only writing, if no one of the 8 bit in addressed byte requires to be turned from "0" into "1
(duration is 103 timing pulses CLK, f=20 kHz);
-only erasure - if there are no turns from "1" into "0" in addressed byte (duration is 103
timing pulses CLK, f=20 kHz).
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