D1274.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 D1274 데이타시트 다운로드

No Preview Available !

Power Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon NPN triple diffusion planar type
For power amplification
s Features
q High collector to base voltage VCBO
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to
base voltage
2SD1274
2SD1274A
2SD1274B
VCBO
150
200
250
2SD1274
Collector to
2SD1274A
emitter voltage
2SD1274B
VCES
150
200
250
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO
VEBO
IC
PC
80
6
5
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff
current
2SD1274
2SD1274A
2SD1274B
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Fall time
Symbol
ICBO
VCEO(sus)*
VEBO
hFE
VBE
VCE(sat)
fT
tf
Conditions
VCB = 150V, IE = 0
VCB = 200V, IE = 0
VCB = 250V, IE = 0
IC = 0.2A, L = 25mH
IE = 1mA, IC = 0
VCE = 4V, IC = 5A
VCE = 4V, IC = 5A
IC = 5A, IB = 1A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 5A, IB1 = 0.8A, VEB = –5V
*VCEO(sus) Test circuit 60Hz
X
L 25mH
IC(A)
0.2
120
6V
Y
115V
G
0.1
80
min typ max Unit
1
1 mA
1
80 V
6V
14
1.5 V
1.6 V
40 MHz
1 µs
VCE(V)
1

No Preview Available !

Power Transistors
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
2SD1274, 2SD1274A, 2SD1274B
IC — VCE
6
TC=25˚C
5 IB=45mA
40mA
35mA
4
30mA
25mA
3
20mA
2 15mA
10mA
1
5mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
IC — VBE
8
VCE=4V
7
25˚C
6
5 TC=100˚C –25˚C
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
TC=100˚C
0.3 25˚C
0.1 –25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
hFE — IC
VCE=4V
300 TC=100˚C
25˚C
100
–25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
fT — IC
VCE=10V
f=10MHz
TC=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
3
1
1 3 10 30 100 300 1000
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
3 IC
1
t=1ms
DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Area of safe operation, horizontal operation ASO
20
f=15.75kHz, TC=25˚C
18
Area of safe operation for
the single pulse load curve
16
due to discharge in the
high-voltage rectifier tube
14 during horizontal operation
12
10
8
6
4
2
<1mA
0
0 80 160 240 320
Collector to emitter voltage VCE (V)
2

No Preview Available !

Power Transistors
103
102
10
2SD1274, 2SD1274A, 2SD1274B
Rth(t) — t
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
3