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2SC5200
High power NPN epitaxial planar bipolar transistor
Preliminary data
Features
High breakdown voltage VCEO = 230 V
Typical fT = 30 MHz
t(s)Application
cAudio power amplifier
roduDescription
PThis device is a NPN transistor manufactured
teusing new BiT-LA (bipolar transistor for linear
amplifier) technology. The resulting transistor
Obsolete Product(s) - Obsoleshows good gain linearity behaviour.
1 23
TO-264
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2SC5200
Marking
2SC5200
Package
TO-264
Packaging
Tube
September 2009
Doc ID 16310 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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Electrical ratings
1 Electrical ratings
2SC5200
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCBO Collector-base voltage (IE = 0)
230 V
VCEO Collector-emitter voltage (IB = 0)
230 V
VEBO Emitter-base voltage (IC = 0)
5V
IC Collector current
15 A
ICM
t(s)PTOT
cTSTG
duTJ
Collector peak current
Total dissipation at TC = 25 °C
Storage temperature
Operating junction temperature
te ProTable 3. Thermal data
leSymbol
Parameter
Obsolete Product(s) - ObsoRthJC Thermal resistance junction-case max
30
150
-55 to 150
150
Value
0.83
A
W
°C
°C
Unit
°C/W
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2SC5200
2 Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 230 V
5 µA
Emitter cut-off current
IEBO
(IC = 0)
VEB = 5 V
t(s)V(BR)CEO(1)
Collector-emitter breakdown
voltage (IB = 0)
IC = 50 mA
ucV(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100 µA
ProdV(BR)EBO(1)
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
teVCE(sat)(1)
Collector-emitter saturation
voltage
IC = 8 A
IB = 800 mA
oleVBE Base-emitter voltage
IC = 7 A VCE = 5 V
ObshFE DC current gain
IC = 1 A
IC = 7 A
VCE = 5 V
VCE = 5 V
-Resistive load
t(s)ton Turn-on time
ts Storage time
ctf Fall time
VCC = 60 V IC = 5A
IB1= -IB2 = 0.5 A
dufT Transition frequency
IC = 1 A VCE = 5 V
ProCCBO
Collector-base capacitance
(IE = 0)
VCB = 10 V f = 1 MHz
Obsolete1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
5 µA
230 V
230 V
5V
3V
1.5 V
55 80 120
35
0.24 µs
4.7 µs
0.6 µs
30 MHz
150 pF
Doc ID 16310 Rev 1
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Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Derating curve
2SC5200
Product(s)2.2 Test circuit
teFigure 4. Resistive load switching test circuit
olete Product(s) - Obsole1. Fast electronic switch
Obs 2. Non-inductive resistor
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2SC5200
3 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Obsolete Product(s) - Obsolete Product(s)
Doc ID 16310 Rev 1
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