IDP20E65D2.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 IDP20E65D2 데이타시트 다운로드

No Preview Available !

Diode
RapidSwitchingEmitterControlledDiode
IDP20E65D2
EmitterControlledDiode
Datasheet
IndustrialPowerControl

No Preview Available !

EmitterControlledDiode
RapidSwitchingEmitterControlledDiode

Features:
•QualifiedaccordingtoJEDECfortargetapplications
•650VEmitterControlledtechnology
•Fastrecovery
•Softswitching
•Lowreverserecoverycharge
•Lowforwardvoltageandstableovertemperature
•175°Cjunctionoperatingtemperature
•Easyparalleling
•Pb-freeleadplating;RoHScompliant
Applications:
•BoostdiodeinCCMPFC
IDP20E65D2
A
C
C
C
A
KeyPerformanceandPackageParameters
Type
Vrrm
If
Vf,Tvj=25°C
IDP20E65D2
650V 20A
1.6V
Tvjmax
175°C
Marking
E20ED2
Package
PG-TO220-2-1
2 Rev.2.1,2014-09-18

No Preview Available !

EmitterControlledDiode
IDP20E65D2
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3 Rev.2.1,2014-09-18

No Preview Available !

IDP20E65D2
EmitterControlledDiode
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Repetitivepeakreversevoltage,Tvj25°C
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax
VRRM
IF
IFpuls
650 V
40.0 A
20.0
60.0 A
Diode surge non repetitive forward current
TC=25°C,tp=8.3ms,sinehalfwave
PowerdissipationTC=25°C
Operating junction temperature
Storage temperature
IFSM
Ptot
Tvj
Tstg
120.0
120.0
-40...+175
-55...+150
A
W
°C
°C
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6 Nm
ThermalResistance
Parameter
Characteristic
Diode thermal resistance,1)
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-a)
Max.Value
Unit
1.25 K/W
62 K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Diode forward voltage
Reverse leakage current
Symbol Conditions
IF=20.0A
VF Tvj=25°C
Tvj=175°C
VR=650V
IR Tvj=25°C
Tvj=175°C
Value
Unit
min. typ. max.
- 1.60 2.20 V
- 1.65 -
- 2.0 40.0 µA
- 500.0 -
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
LE
Value
Unit
min. typ. max.
- 7.0 - nH
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
4
Rev.2.1,2014-09-18

No Preview Available !

EmitterControlledDiode
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=20.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
Tvj=25°C,
VR=400V,
IF=20.0A,
diF/dt=400A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=20.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
Diode reverse recovery time
Diode reverse recovery charge
trr
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=125°C,
VR=400V,
IF=20.0A,
diF/dt=400A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
IDP20E65D2
min.
Value
typ.
max. Unit
- 32 - ns
- 0.25 - µC
- 12.2 - A
- -900 - A/µs
- 43 - ns
- 0.19 - µC
- 6.3 - A
- -420 - A/µs
Value
Unit
min. typ. max.
- 55 - ns
- 0.58 - µC
- 18.0 - A
- -650 - A/µs
- 61 - ns
- 0.38 - µC
- 9.3 - A
- -500 - A/µs
5 Rev.2.1,2014-09-18