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IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID2
fastandsoftantiparalleldiode
IKZ75N65NH5
650VDuoPackIGBTanddiode
Highspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl

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IKZ75N65NH5
Highspeedseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID2
fastandsoftantiparalleldiode

FeaturesandBenefits:
HighspeedH5technologyoffering
•UltralowlossswitchingthankstoKelvinemitterpinin
combinationwithTRENCHSTOPTM5
•Best-in-classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTcopackedwithRAPID2fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
•Solarstringinverters
Packagepindefinition:
•PinC&backside-collector
•PinE-emitter
•PinK-Kelvinemitter
•PinG-gate
Pleasenote:TheemitterandKelvinemitterpinsarenot
exchangeable.Theirexchangemightleadtomalfunction.
KeyPerformanceandPackageParameters
Type
VCE IC VCEsat,Tvj=25°C
IKZ75N65NH5
650V 75A
1.65V
Tvjmax
175°C
Marking
K75ENH5
Package
PG-TO247-4
2 Rev.2.1,2014-10-31

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IKZ75N65NH5
Highspeedseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3 Rev.2.1,2014-10-31

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IKZ75N65NH5
Highspeedseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
VCE
IC
ICpuls
650
90.0
75.0
300.0
V
A
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs1)
Diodeforwardcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax1)
-
IF
IFpuls
300.0
95.0
73.0
219.0
A
A
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Operating junction temperature
Storage temperature
VGE
Ptot
Tvj
Tstg
±20
±30
395.0
197.0
-40...+175
-55...+150
V
W
°C
°C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6 Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
Max.Value
Unit
0.38 K/W
0.46 K/W
40 K/W
1) Defined by design. Not subject to production test.
4
Rev.2.1,2014-10-31

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IKZ75N65NH5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=75.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
VGE=0V,IF=75.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
IC=0.75mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=75.0A
min.
Value
typ.
max. Unit
650 -
-V
-
-
1.65 2.10
1.82 -
V
- 1.90 -
-
-
1.60 2.20
1.65 -
V
- 1.65 -
3.2 4.0 4.8 V
- - 75.0 µA
- 3300.0 -
- - 100 nA
- 104.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=75.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 4300 -
- 130 - pF
- 16 -
- 166.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=37.5A,
VGE=0.0/15.0V,
RG(on)=27.0Ω,RG(off)=22.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
- 52 - ns
- 19 - ns
- 412 - ns
- 19 - ns
- 0.88 - mJ
- 0.52 - mJ
- 1.40 - mJ
1) The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.
5
Rev.2.1,2014-10-31