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SEMICONDUCTOR
TECHNICAL DATA
CONSTANT VOLTAGE REGULATION APPLICATION.
REFERENCE VOLTAGE APPLICATION.
WAVE FORM CLIPPER
FEATURES
Small Package : SOT-23
Sharp breakdown characteristic.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
Operating Temperature
SYMBOL
PD
Tj
Tstg
Topr
RATING
200
150
-55 150
-55 150
UNIT
mW
Z02W100V
ZENER DIODE
SILICON EPITAXIAL PLANAR DIODE
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. NC
2. ANODE
3. CATHODE
3
21
SOT-23
Marking
10AType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Zener Voltage
Dynamic Impedan
(Note1)
(Note2)
VZ IZ=1mA
ZZ IZ=1mA
Reverse Current
IR VR=76V
(Note 1) VZ is tested with pulsed (40ms)
(Note 2) VZ is measured at IZ by given a very small A.C current signal.
MIN.
95. 0
-
-
TYP.
-
-
-
MAX.
105. 0
700
0.2
UNIT
V
A
2007. 2. 21
Revision No : 0
1/2

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Z02W100V
PZSM - tw
1K
Ta=25 C
Repetitive
100 tr
10
1
1µ
10µ 100µ 1m 10m 100m
PULSE WIDTH TIME tW (S)
IZ - VZ
10m Ta=25 C
TYP.
1m
100µ
10µ
1µ
100n
10n
1n
0
30 60
90
ZENER VOLTAGE VZ (V)
120
P - Ta
250
* MOUNTED ON A GLASS
EPOXY CIRCUIT BOARD
200 OF 20x20mm
PAD DIMENSION
OF 4x4mm
150
100
50
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
γZ - VZ
0.12
TYP.
0.11
0.10
0.09
%/ C
mV/ C
140
120
100
80
0.08 60
0.07 40
0 SS
20
0 40 50 60 70 80 90 100 110 120 130
ZENER VOLTAGE VZ (V)
2007. 2. 21
Revision No : 0
2/2