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PD -94188A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
80SCLQ030
80 Amp, 30V
Major Ratings and Characteristics
Characteristics
80SCLQ030 Units
IF(AV)
VRRM (Per Leg)
IFSM @ tp = 8.3ms half-sine
(Per Leg)
80
30
200
A
V
A
VF @ 40Apk, TJ =125°C
(Per Leg)
0.55
V
TJ, Tstg Operating and storage -55 to 150
°C
Description/Features
The 80SCLQ030 center tap Schottky rectifier has been
expressly designed to meet the rigorous requirements of hi-
rel environments. It is packaged in the hermetic surface
mount SMD-1 ceramic package. The device's forward
voltage drop and reverse leakage current are optimized for
the lowest power loss and the highest circuit efficiency for
typical high frequency switching power supplies and
resonent power converters. Full MIL-PRF-19500 quality
conformance testing is available on source control drawings
to TX, TXV and S quality levels.
Hermetically Sealed
Center Tap
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
Surface Mount
Lightweight
CASE STYLE
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IR Case Style SMD-1
213
ANODECOMMONANODE
CATHODE
1
7/11/01

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80SCLQ030
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) (Per Leg)
VRWM Max. Working Peak Reverse Voltage (V) (Per Leg)
80SCLQ030
30
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current (Per Leg)
Limits
80
200
Units
Conditions
A 50% duty cycle @ TC = 81°C, square waveform
A @ tp = 8.3 ms half-sine
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop
(Per Leg) See Fig. 1Q
IRM Max. Reverse Leakage Current
(Per Leg) See Fig. 2Q
Limits
0.58
0.7
0.83
0.47
0.56
0.73
0.42
0.55
0.82
1.5
75
200
Units
V
V
V
V
V
V
V
V
V
mA
mA
mA
Conditions
@ 20A
@ 40A
@ 80A
TJ = -55°C R
@ 20A
@ 40A
@ 80A
TJ = 25°CR
@ 20A
@ 40A
@ 80A
TJ = 125°C R
TJ = 25°C
TJ = 100°C
TJ = 125°C
VR = rated VR R
CT Max. Junction Capacitance (Per Leg) 2600
L S Typical Series Inductance (Per Leg)
5.9
pF VR = 5VDC ( 1MHz, 25°C ) R
nH Measured from center of cathode pad to center of
anode pad
Thermal-Mechanical Specifications
Parameters
TJ Max.Junction Temperature Range
Tstg
RthJC
Max. Storage Temperature Range
Max. Thermal Resistance, Junction
to Case (Per Leg)
RthJC Max. Thermal Resistance, Junction
to Case (Per Package)
wt Weight (Typical)
Die Size (Typical)
Limits Units
-55 to 150 °C
-55 to 150 °C
1.25 °C/W
Conditions
DC operation See Fig. 4
0.63 °C/W DC operation
2.6
150X180
g
mils
Case Style
SMD-1
Q Pulse Width < 300µs, Duty Cycle < 2%
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80SCLQ030
1000
100 125°C
100°C
100 10
75°C
1
0.1 25°C
0.01
0
10 20
Reverse Voltage - VR (V)
30
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage (Per Leg)
10
Tj = 125°C
Tj = 25°C
10000
Tj = -55°C
1
0.0
0.2 0.4 0.6 0.8
Forward Voltage Drop - V F (V)
1.0
Fig. 1 - Max. Forward Voltage Drop Characteristics
(Per Leg)
1000
0
TJ = 25°C
10 20
Reverse Voltage -VR (V)
30
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Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage (Per Leg)
3

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80SCLQ030
10
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics (Per Leg)
180
80SCLQ030
160 R thJC = 0.63°C/W
140
120
100 DC
80
60
40
20
0
0
20 40 60 80 100 120
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/01
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