NS6A11AFT3G.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 NS6A11AFT3G 데이타시트 다운로드

No Preview Available !

NS6A5.0AFT3G,
SZNS6A5.0AFT3G Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional
The NS6AxxAFT3G series is designed to protect voltage sensitive
components from high voltage, high energy transients. This device
has excellent clamping capability, high surge capability, low zener
impedance and fast response time. The NS6AxxAFT3G series is
ideally suited for use in computer hard disk drives, communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Specification Features:
Peak Reverse Working Voltage Range − 5 V to 64 V
Peak Pulse Power of 600 W (10 x 1000 msec)
ESD Rating of Class 3 (>16 kV) per Human Body Model
ESD Rating of Class 4 (>8 kV) IEC 61000−4−2
Fast Response Time
Low Profile Package
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
http://onsemi.com
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
Cathode
Anode
SMA−FL
CASE 403AA
MARKING DIAGRAM
xxx
AYWWG
xxx = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NS6AxxAFT3G,
SMA−FL 5000 / Tape &
SZNS6AxxAFT3G (Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 2
1
Publication Order Number:
NS6A5.0AF/D

No Preview Available !

NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
PPK 600 W
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
PD
RqJL
1.5 W
20 mW/°C
50 °C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
PD
RqJA
0.5 W
4.0 mW/°C
250 °C/W
Forward Surge Current (Note 4) @ TA = 25°C
IFSM 40 A
Operating and Storage Temperature Range
TJ, Tstg
−65 to +150
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403AA case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A)
Symbol
Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
IF Forward Current
VF Forward Voltage @ IF
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni−Directional TVS
http://onsemi.com
2

No Preview Available !

NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
ELECTRICAL CHARACTERISTICS
Device*
Device
Marking
VRWM
(Note 6)
V
IR @ VRWM
mA
Breakdown Voltage
VBR (Note 7) Volts
Min Nom Max
@ IT
mA
VC @ IPP (Note 8)
VC IPP
VA
Ctyp
(Note 9)
pF
NS6A5.0AFT3G
6AA
5
800
6.4 6.70
7
10
9.2
65.2 2700
NS6A6.0AFT3G
6AB
6
800
6.67 7.02 7.37
10
10.3
58.3
2300
NS6A6.5AFT3G
6AC
6.5
500
7.22 7.60 7.98
10
11.2
53.6 2140
NS6A7.0AFT3G
6AD
7
500
7.78 8.19 8.6
10
12
50 2005
NS6A7.5AFT3G
6AE
7.5
100
8.33 8.77 9.21
1
12.9 46.5 1890
NS6A8.0AFT3G
6AF
8
50
8.89 9.36 9.83
1
13.6 44.1 1780
NS6A8.5AFT3G
6AG
8.5
10
9.44 9.92 10.4
1
14.4 41.7 1690
NS6A9.0AFT3G
6AH
9
5
10 10.55 11.1
1
15.4
39
1605
NS6A10AFT3G
6AI
10
5
11.1 11.70 12.3
1
17 35.3 1460
NS6A11AFT3G
6AL
11
5
12.2 12.85 13.5
1
18.2
33
1345
NS6A12AFT3G
6AJ
12
5
13.3 14.00 14.7
1
19.9 30.2 1245
NS6A13AFT3G
6AK
13
5
14.4 15.15 15.9
1
21.5 27.9 1160
NS6A14AFT3G
6AM
14
5
15.6 16.40 17.2
1
23.2 25.8 1085
NS6A15AFT3G
6AN
15
5
16.7 17.60 18.5
1
24.4
24
1020
NS6A16AFT3G
6AO
16
5
17.8 18.75 19.7
1
26 23.1 965
NS6A17AFT3G
6AP
17
5
18.9 19.90 20.9
1
27.6 21.7
915
NS6A18AFT3G
6AQ
18
5
20 21.05 22.1
1
29.2 20.5
870
NS6A20AFT3G
6AR
20
5
22.2 23.35 24.5
1
32.4 18.5
790
NS6A22AFT3G
6AS
22
5
24.4 25.65 26.9
1
35.5 16.9
730
NS6A24AFT3G
6AT
24
5
26.7 28.10 29.5
1
38.9 15.4
675
NS6A26AFT3G
6AU
26
5
28.9 30.40 31.9
1
42.1 14.2
630
NS6A28AFT3G
6AV
28
5
31.1 32.75 34.4
1
45.4 13.2
590
NS6A30AFT3G
6AW
30
5
33.3 35.05 36.8
1
48.4 12.4
555
NS6A33AFT3G
6AX
33
5
36.7 38.65 40.6
1
53.3
11.3
510
NS6A36AFT3G
6AY
36
5
40 42.10 44.2
1
58.1 10.3
470
NS6A40AFT3G
6AZ
40
5
44.4 46.75 49.1
1
64.5
9.3
430
NS6A43AFT3G
6A0
43
5
47.8 50.30 52.8
1
69.4
8.6
400
NS6A45AFT3G
6A1
45
5
50 52.65 55.3
1
72.2
8.3
385
NS6A48AFT3G
6A2
48
5
53.3 56.10 58.9
1
77.4
7.7
365
NS6A51AFT3G
6A3
51
5
56.7 59.70 62.7
1
82.4
7.3
345
NS6A54AFT3G
6A4
54
5
60 63.15 66.3
1
87.1
6.9
330
NS6A58AFT3G
6A5
58
5
64.4 67.80 71.2
1
93.6
6.4
310
NS6A60AFT3G
6A7
60
5
66.7 70.20 73.7
1
96.8
6.2
300
NS6A64AFT3G
6A8
64
5
71.1 74.85 78.6
1
103
5.8
280
*Includes SZ−prefix devices where applicable.
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25°C.
8. Surge current waveform per Figure 1.
9. Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C.
http://onsemi.com
3

No Preview Available !

NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
tr 10 ms
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP.
100
PEAK VALUE - IPP
50
HALF VALUE -
IPP
2
tP
0
01 2 34
t, TIME (ms)
Figure 1. 10 × 1000 ms Pulse Waveform
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Pulse Derating Curve
Zin
Vin
LOAD
VL
Figure 3. Typical Protection Circuit
http://onsemi.com
4

No Preview Available !

NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA
ISSUE O
E
E1
TOP VIEW
D
A
c
SIDE VIEW
C
SEATING
PLANE
1.76
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM MIN MAX
A 0.90 1.10
b 1.25 1.65
c 0.15 0.30
D 2.40 2.80
E 4.80 5.40
E1 4.00 4.60
L 0.70 1.10
RECOMMENDED
SOLDER FOOTPRINT*
5.56
2X b
BOTTOM VIEW
2X L
1.30
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
5
NS6A5.0AF/D