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NTS8100MFS,
NRVTS8100MFS
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
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SCHOTTKY BARRIER
RECTIFIERS
8 AMPERES
100 VOLTS
1,2,3
5,6
MARKING
DIAGRAM
A
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
A
A
Not Used
TS8100
AYWWZZ
TS8100
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
C
C
ORDERING INFORMATION
Device
NTS8100MFST1G
Package
SO−8 FL
(Pb−Free)
Shipping
1500 /
Tape & Reel
NTS8100MFST3G
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
NRVTS8100MFST1G SO−8 FL
1500 /
(Pb−Free) Tape & Reel
NRVTS8100MFST3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 1
1
Publication Order Number:
NTS8100MFS/D

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NTS8100MFS, NRVTS8100MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 130°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 135°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
8
16
150
V
A
A
A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
Tstg −65 to +150 °C
TJ
−55 to +150
°C
EAS 100 mJ
3B
ESD Rating (Machine Model)
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 8 Amps, TJ = 125°C)
(iF = 8 Amps, TJ = 25°C)
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
RθJC
Typ
Max Unit
2.0 °C/W
vF V
0.58 0.62
0.64 0.73
iR mA
7 20
0.015
0.07
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NTS8100MFS, NRVTS8100MFS
TYPICAL CHARACTERISTICS
100 100
10 10
TA = 125°C
TA = 125°C
1
TA = 150°C
1
TA = 150°C
0.1
0
TA = 25°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
0.9
0.1
0
TA = 25°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E+00
1.E−01
1.E−02
1.E−03
TA = 150°C
TA = 125°C
1.E−01
1.E−02
1.E−03
TA = 150°C
TA = 125°C
1.E−04
1.E−04
1.E−05
TA = 25°C
1.E−05
TA = 25°C
1.E−06
1.E−06
0 10 20 30 40 50 60 70 80 90 100
0 10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1,000
100
TJ = 25°C
10
1 10 100
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
15
14
13 DC
RqJC = 2.0 °C/W
12
11
10 Square Wave
9
8
7
6
5
4
3
2
1
0
0 10 30 50 70 90 110 130 150
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating
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3

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100
50% Duty Cycle
20%
10 10%
5%
2%
1 1%
0.1 Single Pulse
NTS8100MFS, NRVTS8100MFS
TYPICAL CHARACTERISTICS
12
11 IPK/IAV = 20
10
9
8
7
6
5
4
3
2
1
0
012
IPK/IAV = 10
TJ = 150°C
IPK/IAV = 5
Square Wave
DC
3 456 78
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 8. Thermal Characteristics
1
10 100 1000
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NTS8100MFS, NRVTS8100MFS
PACKAGE DIMENSIONS
D
2
D1
2X
0.20 C
A
B 2X
E1
2E
1 2 34
TOP VIEW
0.10 C
0.10 C
SIDE VIEW
A
DETAIL A
8X b
0.10 C A B
0.05 c L
1
e/2
4
K
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
c
4X
q
A1
3X
e
DETAIL A
C
SEATING
PLANE
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.495
4.560
2X
1.530
MILLIMETERS
MIN NOM MAX
0.90 1.00 1.10
0.00 −−− 0.05
0.33 0.41 0.51
0.23 0.28 0.33
5.00 5.15 5.30
4.70 4.90 5.10
3.80 4.00 4.20
6.00 6.15 6.30
5.70 5.90 6.10
3.45 3.65 3.85
1.27 BSC
0.51 0.61 0.71
1.20 1.35 1.50
0.51 0.61 0.71
0.125 REF
3.00 3.40 3.80
0 _ −−− 12 _
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
3.200
4.530
E2
PIN 5
(EXPOSED PAD)
L1 M
G D2
BOTTOM VIEW
2X
0.905
1
1.330
0.965
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NTS8100MFS/D