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Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 600 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N1199A thru 1N1206AR
VRRM = 50 V - 600 V
IF = 12 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
VRRM
VRMS
VDC
IF
TC 150 °C
50 100 200
35 70 140
50 100 200
12 12 12
Surge non-repetitive forward
current, Half Sine Wave
IF,SM TC = 25 °C, tp = 8.3 ms
240
240
240
400 600 V
280 420 V
400 600 V
12 12 A
240 240 A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
VF
IR
RthJC
IF = 12 A, Tj = 25 °C
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 175 °C
1.1
10
15
2.00
1.1
10
15
2.00
1.1
10
15
2.00
1.1 1.1 V
10 10 μA
15 15 mA
2.00 2.00 °C/W
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1N1199A thru 1N1206AR
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1N1199A thru 1N1206AR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
M DO- 4 (DO-203AA)
J
P
D
G
B
N
E
F
C
A
Inches
Millimeters
Min
A
B 0.424
C -----
D ------
E 0.453
F 0.114
G -----
J -----
M -----
N 0.031
P 0.070
Max Min
10-32 UNF
0.437
10.77
0.505
-----
0.800
-----
0.492
11.50
0.140
2.90
0.405
-----
0.216
-----
φ0.302
-----
0.045
0.80
0.79 1.80
Max
11.10
12.82
20.30
12.50
3.50
10.29
5.50
φ7.68
1.15
2.00
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