IRG4PC30SPBF.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 IRG4PC30SPBF 데이타시트 다운로드

No Preview Available !

PD - 94922
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30SPbF
Standard Speed IGBT
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.4V
@VGE = 15V, IC = 18A
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
TO-247AC
Max.
600
34
18
68
68
± 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
1.2
–––
40
–––
Units
°C/W
g (oz)
1
12/30/03

No Preview Available !

IRG4PC30SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance …
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
—
—
—
—
3.0
—
6.0
—
—
—
—
Typ.
—
—
0.75
1.40
1.84
1.45
—
-11
11
—
—
—
—
Max. Units
Conditions
— V VGE = 0V, IC = 250µA
— V VGE = 0V, IC = 1.0A
— V/°C VGE = 0V, IC = 1.0mA
1.6 IC = 18A
VGE = 15V
— V IC = 34A
See Fig.2, 5
— IC = 18A , TJ = 150°C
6.0 VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
— S VCE = 100V, IC = 18A
250 µA VGE = 0V, VCE = 600V
2.0 VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
50 75
7.3 11
17 26
22 —
18 —
540 810
390 590
0.26 —
3.45 —
3.71 5.6
21 —
19 —
790 —
760 —
6.55 —
13 —
1100 —
72 —
13 —
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 18A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 18A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail"
See Fig. 9, 10, 14
TJ = 150°C,
IC = 18A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
2 www.irf.com

No Preview Available !

IRG4PC30SPbF
60
50
40
Square wave:
30 60% of rated
voltage
20
10 Ideal diodes
0
0.1
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 24W
Triangular wave:
Clamp voltage:
80% of rated
1 10
f, Frequency (kHz)
A
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 oC
TJ = 150 oC
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
100
TJ = 150 oC
10
TJ = 25 oC
1
VCC = 50V
5µs PULSE WIDTH
0.1
5 6 7 8 9 10
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3

No Preview Available !

IRG4PC30SPbF
35
30
25
20
15
10
5
0
25
50 75 100 125
TC , Case Temperature ( ° C)
150
3.0 VGE = 15V
80 us PULSE WIDTH
2.5
IC = 36 A
2.0
IC = 18 A
1.5
IC = 9.90 AA
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x Z thJC + TC
t2
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4 www.irf.com

No Preview Available !

2000
1500
1000
VCCCGiroeeesEss
=
=
=
=
0V,
CCCggceec
+
+
f = 1MHz
Cgc , Cce
Cgc
SHORTED
Cies
500
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
IRG4PC30SPbF
20 VCC = 400V
I C = 18A
16
12
8
4
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.80 VCC = 480V
VGE
TJ
=
=
15V
25 °
C
3.76 IC = 18A
3.72
3.68
3.64
3.60
0
10 20 30 40
RG , Gate Resistance (Ohm)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
100 RG = 23Ohm
VGE = 15V
VCC = 480V
10
1
IC = 36A
IC = 18A
IC = 9.90AA
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5