IRG4PC40FPBF pdf, IRG4PC40FPBF 데이터시트, IRG4PC40FPBF 데이타시트

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PD -95430

INSULATED GATE BIPOLAR TRANSISTOR

IRG4PC40FPbF

Fast Speed IGBT

Features

Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

Industry standard TO-247AC package

Lead-Free

n-channel

Benefits

Generation 4 IGBT's offer highest efficiency available

IGBT's optimized for specified application conditions

Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

VCES = 600V

VCE(on) typ. = 1.50V

@VGE = 15V, IC = 27A

Absolute Maximum Ratings

VCES

IC @ TC = 25°C

IC @ TC = 100°C

ICM

ILM

VGE

EARV

PD @ TC = 25°C

PD @ TC = 100°C

TSTG

Parameter

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

Thermal Resistance

RθJC

RθCS

RθJA

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

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TO-247AC

Max.

600

200

± 20

160

-55 to + 150

300 (0.063 in. (1.6mm from case )

10 lbfin (1.1Nm)

Units

°C

Typ.

0.24

6 (0.21)

Max.

0.77

Units

°C/W

g (oz)

06/17/04

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IRG4PC40FPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage 600

V VGE = 0V, IC = 250µA

V(BR)ECS

Emitter-to-Collector Breakdown Voltage 18

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.70

1.50 1.7

V/°C

VGE = 0V, IC = 1.0A

VGE = 0V, IC = 1.0mA

IC = 27A

VGE = 15V

VCE(ON)

VGE(th)

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage

1.85 V IC = 49A

See Fig.2, 5

1.56

IC = 27A , TJ = 150°C

3.0 6.0

VCE = VGE, IC = 250µA

∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -12 mV/°C VCE = VGE, IC = 250µA

gfe Forward Transconductance

9.2 12 S VCE = 100V, IC = 27A

ICES

Zero Gate Voltage Collector Current

250 µA VGE = 0V, VCE = 600V

2.0

VGE = 0V, VCE = 10V, TJ = 25°C

1000

VGE = 0V, VCE = 600V, TJ = 150°C

IGES Gate-to-Emitter Leakage Current

±100 n A VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qge

Qgc

td(on)

td(off)

Eon

Eoff

Ets

td(on)

td(off)

Ets

Cies

Coes

Cres

Notes:

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

100 150

IC = 27A

15 23

35 53

nC VCC = 400V

VGE = 15V

See Fig. 8

18 ns TJ = 25°C

240 360

IC = 27A, VCC = 480V

170 250

VGE = 15V, RG = 10Ω

0.37

Energy losses include "tail"

1.81 mJ See Fig. 10, 11, 13, 14

2.18 2.8

TJ = 150°C,

380

ns IC = 27A, VCC = 480V

VGE = 15V, RG = 10Ω

310

Energy losses include "tail"

3.9 mJ See Fig. 13, 14

13 nH Measured 5mm from package

2200

VGE = 0V

140

pF VCC = 30V

= 1.0MHz

See Fig. 7

Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,

(See fig. 13a)

Repetitive rating; pulse width limited by maximum

junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

Pulse width 5.0µs, single shot.

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IRG4PC40FPbF

Square wave:

40 60% of rated

voltage

For both:

Duty cycle: 50%

TJ = 125°C

Tsink = 90°C

Gate drive as specified

Power Dissipation = 35W

Triangular wave:

Clamp voltage:

80% of rated

Ideal diodes

0.1 1 10

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

100

1000

TJ = 25°C

100

TJ = 150°C

100

TJ = 150°C

TJ = 25°C

VGE = 15V

1 20µs PULSE WIDTH A

1 10

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

V CC = 50V

1 5µs PULSE WIDTH A

5 6 7 8 9 10 11 12

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

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IRG4PC40FPbF

VGE = 15V

2.5

VGE = 15V

80µs PULSE WIDTH

IC = 54A

2.0

25 50 75 100 125 150

TC , Case Temperature (°C)

Fig. 4 - Maximum Collector Current vs. Case

Temperature

IC = 27A

1.5

I C = 14A

1.0 A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

0.00001

PDM

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t1 / t 2

2. Peak TJ = PDM x Z thJC + TC

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4PC40FPbF

4000

3000

2000

VGE = 0V

f = 1 MHz

Cies = Cge + Cgc + Cce

Cres = Cce

Coes = Cce + Cgc

SHORTED

Cies

1000 Coes

Cres

1 10 100

VCE, Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

VCE = 400V

IC = 27A

0 20 40 60 80 100 120

Qg, Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

2.60

VCC = 480V

VGE = 15V

T J = 25°C

2.50 I C = 27A

2.40

2.30

2.20

2.10

10 20 30 40 50

R G , Gate Resistance (Ω)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

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IC = 54A

IC = 27A

1 IC = 14A

R G = 10Ω

V GE = 15V

0.1 V CC = 480V A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature