F1423.pdf 데이터시트 (총 26 페이지) - 파일 다운로드 F1423 데이타시트 다운로드

No Preview Available !

TX Differential Input RF Amplifier
GENERAL DESCRIPTION
The F1423 is a 600 MHz to 3000 MHz TX differential
input / single-ended output RF amplifier used in
transmitter applications.
The F1423 TX Amp provides 13.1 dB gain with
+41.8 dBm OIP3 and 5.1 dB noise figure at 2000 MHz.
This device uses a single 5 V supply and 120 mA of ICC.
This device is packaged in a 4mm x 4mm, 24-pin Thin
QFN with 50 ohm differential RF input and 50 ohm
single ended RF output impedances for ease of
integration into the signal-path.
COMPETITIVE ADVANTAGE
In typical Base Stations, RF Amplifiers are used in the
TX traffic paths to drive the transmit power amplifier.
The F1423 TX Amplifier offers very high reliability due
to its construction using silicon die in a QFN package.
The F1423 includes a broadband differential input to
accept AC-coupled signals directly from a balanced
modulator or RF DAC architecture.
APPLICATIONS
Multi-mode, Multi-carrier Transmitters
GSM850/900 Base Stations
PCS1900 Base Stations
DCS1800 Base Stations
WiMAX and LTE Base Stations
UMTS/WCDMA 3G Base Stations
PHS/PAS Base Stations
Public Safety Infrastructure
F1423
Datasheet
600 MHz to 3000 MHz
FEATURES
Broadband 600 MHz – 3000 MHz
13.1 dB typical gain @ 2000 MHz
5.1 dB NF @ 2000 MHz
+41.8 dBm OIP3 @ 2000 MHz
+21.5 dBm output P1dB @ 2000 MHz
Single 5 V supply voltage
ICC = 120 mA
Up to +105 °C TCASE operating temperature
50 Ω differential input impedance
50 Ω single ended output impedance
Positive gain slope for board loss
compensation
Standby mode for power savings
4 mm x 4 mm, 24-pin TQFN package
FUNCTIONAL BLOCK DIAGRAM
RFIN
R FO UT
STBY
BANDSEL
ORDERING INFORMATION
F1423NBGI8
RF Product Line
Green
Tape &
Reel
F1423, Rev O 11/6/2015
1 © 2015 Integrated Device Technology, Inc.

No Preview Available !

F1423
ABSOLUTE MAXIMUM RATINGS
Parameter
VCC to GND
STBY, Band_Sel
RBIAS1
RBIAS2
RFIN+, RFIN-, Voltage1
RFIN+, RFIN-, Current1
RFOUT externally applied DC voltage
RF Differential Input Power
(applied for 24 hours maximum)
Continuous Power Dissipation
Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10s)
ElectroStatic Discharge – HBM
(JEDEC/ESDA JS-001-2014)
ElectroStatic Discharge – CDM
(JESD 22-C101F)
Symbol
VCC
VCntl
IRB1
IRB2
VRFin
IRFin
VRFout
Pin
Pdiss
Tj
Tst
Min
-0.3
-0.3
-0.02
-5
VCC - 0.15
-65
Max
+5.5
VCC + 0.25
+1.5
+0.8
+0.02
+5
VCC + 0.15
+22
1.5
150
150
260
Class 2
(2000 V)
Class C3
(1000 V)
Units
V
V
mA
mA
V
mA
V
dBm
W
°C
°C
°C
Note 1: The RFIN+ and RFIN- pins connect to an internal balun that presents a very low impedance to ground.
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL AND MOISTURE CHARACTERISTICS
θJA (Junction – Ambient)
θJC (Junction – Case) [The Case is defined as the exposed paddle]
Moisture Sensitivity Rating (Per J-STD-020)
40 °C/W
4 °C/W
MSL1
Zero-DistortionTM, TX Amplifier
2
Rev O 11/6/2015

No Preview Available !

F1423 RECOMMENDED OPERATING CONDITIONS
F1423
Parameter
Supply Voltage(s)
Operating Temperature Range
RF Frequency Range
RF Source Impedance
RF Load Impedance
RF Frequency Range
Symbol
Conditions
VCC
TCASE
FRF
ZRFI
ZRFO
All VCC pins
Case Temperature
Operating Range
Differential
Single Ended
RF Band Designation2
FRF_LB
FRF_MB
FRF_HB
FRF_BB
Low-band
Mid-band
High-band
Broad-band
Min Typ Max Units
4.75 5.25 V
-40
+105
°C
600 30001 MHz
50 Ω
50 Ω
600
1400
2100
600
1100
2100
30001
30001
MHz
Note 1: Though device linearity is specified over the range from 700 MHz to 2700 MHz, gain flatness up to 3000 MHz
is specified in the high-band and broadband tables to account for extended DPD bandwidth requirements.
Note 2: To optimize RF performance, a different output match will be used for each of the 4 RF bands listed (see
Table 2). In addition, different value amplifier bias resistors will be used to optimize performance in each of
the 4 bands.
Rev O 11/6/2015
3 Zero-DistortionTM, TX Amplifier

No Preview Available !

F1423
F1423 SPECIFICATION - GENERAL
See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, VCC = +5.0 V, TC = +25 °C.
Parameter
Logic Input High
Logic Input Low
Logic Current
Supply Current3
Standby Current
Power ON switching time
Power OFF switching time
Symbol
VIH
VIL
ISTBY
IBAND
ICC_LB
ICC_MB
ICC_HB
ICC_BB
ICC_STBY
TON
TOFF
Condition
STBY pin
Band_Sel pin
Low-band bias setting
Mid-band bias setting
High-band bias setting
Broad-band bias setting
STBY = 5V
50% STBY to RF output
settled to within ±0.5dB
50% STBY to DC standby
current settled to within
±2mA of final ICC value
Min Typ Max Units
1.1
0.63
V
-10 +10
-10
+10
µA
103
120
mA
120
120 135 1
0.8 1.0 mA
1 µs
1 µs
Note 1: Items in min/max columns in bold italics are Guaranteed by Test.
Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
Note 3: Use external resistors to set amplifier bias currents to optimize device linearity. See Table 2.
Zero-DistortionTM, TX Amplifier
4
Rev O 11/6/2015

No Preview Available !

F1423
F1423 SPECIFICATION – LOW-BAND
See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 700 MHz, Pout = +7 dBm, R8 =2.1 kΩ, R9 =9.1 kΩ, C1 = 9 pF,
Rsource = 50 Ω differential, Rload = 50 Ω single-ended, Band_Sel = open, EVKit trace connector and transformer
losses are de-embedded.
Parameter
RF Input Return Loss
RF Output Return Loss
Common Mode Rejection
Gain
Gain Flatness
Gain Ripple
Noise Figure3
Output Third Order
Intercept Point3
Output 1dB Compression3
Symbol
RFINRL_LB
RFOUTRL_LB
CMRRLB
GLB
GFLAT_LB
GRIPPLE_LB
Condition
700 MHz to 1100 MHz
Any 400 MHz BW from
700 MHz to 1100 MHz
In any 20 MHz range over
RF Band
NFLB
OIP3LB
OP1dBLB
Tcase = +105 °C
Pout = +4 dBm/tone
5 MHz tone separation
Min
12.0 1
Typ
17
12.8
20.7
12.6
0.4
Max
13.2
Units
dB
dB
dB
dB
dB
±0.04
4.5
5.4
392 42.5
20 21.1
dB
dB
dBm
dBm
F1423 SPECIFICATION – MID-BAND
See F1423 Typical Application Circuit Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 2000 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 9 pF,
Rsource = 50 Ω differential, Rload = 50 Ω single-ended, Band_Sel = GND, EVKit trace connector and transformer
losses are de-embedded.
Parameter
RF Input Return loss
RF Output Return Loss
Common Mode Rejection
Gain
Gain Flatness
Gain Ripple
Noise Figure3
Output Third Order
Intercept Point3
Output 1dB Compression3
Symbol
RFINRL_MB
RFOUTRL_MB
CMRRMB
GMB
GFLAT_MB
GRIPPLE_MB
Condition
1400 MHz to 2100 MHz
Any 400MHz BW from
1400 MHz to 2100 MHz
In any 20 MHz range over
RF Band
NFMB
OIP3MB
OP1dBMB
Tcase = +105 °C
Pout = +4 dBm/tone
5MHz tone separation
Min
12.5 1
Typ
15
16.5
19.0
13.1
0.17
Max
13.7
Units
dB
dB
dB
dB
dB
38.82
20.3
±0.01
5.1
5.8
41.8
21.5
dB
dB
dBm
dBm
Note 1: Items in min/max columns in bold italics are Guaranteed by Test.
Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
Note 3: Measured using external 1:1 transformer at the RF input.
Rev O 11/6/2015
5 Zero-DistortionTM, TX Amplifier