CPH5617.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 CPH5617 데이타시트 다운로드

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Ordering number : EN7370C
CPH5617
N-Channel Power MOSFET
30V, 150mA, 3.7Ω, Dual CPH5
http://onsemi.com
Features
Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Composite type with 2 MOSFETs contained in the one package, improving the mounting efciency greatly
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW10μs, duty cycle1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
30
±10
150
600
0.25
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7017A-004
2.9
5 43
1
0.95
2
0.4
0.15 CPH5617-TL-E
Product & Package Information
• Package
: CPH5
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
0.05
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
CPH5
TL
Electrical Connection
543
12
Semiconductor Components Industries, LLC, 2013
August, 2013
82113 TKIM TC-00002980/71112 TKIM/N1109PE TKIM/90503 TSIM TA-3722 No.7370-1/6

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CPH5617
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
VDS=10V, ID=80mA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
See specied Test Circuit.
VDS=10V, VGS=10V, ID=150mA
IS=150mA, VGS=0V
Switching Time Test Circuit
VIN
4V
0V
PW=10μs
D.C.1%
VIN
G
VDD=15V
ID=80mA
RL=187.5Ω
D VOUT
P.G 50Ω
S CPH5617
min
30
Ratings
typ
0.4
0.15
0.22
2.9
3.7
6.4
7.0
5.9
2.3
19
65
155
120
1.58
0.26
0.31
0.87
max
10
±10
1.3
3.7
5.2
12.8
1.2
Unit
V
μA
μA
V
S
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
CPH5617-TL-E
Package
CPH5
Shipping
3,000pcs./reel
memo
Pb Free
No.7370-2/6

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CPH5617
ID -- VDS
0.16
0.14 3.5V
0.12 4.0V
2.0V
0.10
0.08
VGS=1.5V
0.06
0.04
0.02
0
0 0.2 0.4 0.6 0.8 1.0
Drain to Source Voltage, VDS -- V IT00029
RDS(on) -- VGS
10
Ta=25°C
9
8
7
6 80mA
5
ID=40mA
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10
Gate to Source Voltage, VGS -- V IT00031
RDS(on) -- ID
10
VGS=2.5V
7
5 Ta=75°C
25°C
--25°C
3
2
1.0
0.01
7
23
5 7 0.1
23
5
Drain Current, ID -- A
IT00033
RDS(on) -- Ta
6
5
4
3
V GVSG=2S.=54V.,0IVD, =ID40=m80AmA
2
1
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00035
0.30
VDS=10V
0.25
ID -- VGS
0.20
0.15
0.10
0.05
0
0
10
7
5
3
2
0.5 1.0 1.5 2.0 2.5 3.0
Gate to Source Voltage, VGS -- V
RDS(on) -- ID
IT00030
VGS=4V
Ta=75°C
25°C
--25°C
1.0
0.01
100
7
5
3
2
10
7
5
3
2
1.0
0.001
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.01
23
5 7 0.1
23
5
Drain Current, ID -- A
RDS(on) -- ID
IT00032
VGS=1.5V
Ta=75°C
--25°C
25°C
23
5 7 0.01
Drain Current, ID -- A
yfs -- ID
23
IT00034
VDS=10V
Ta= --25°C
75°C
25°C
23
5 7 0.1
23
5
Drain Current, ID -- A
IT00036
No.7370-3/6