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UNISONIC TECHNOLOGIES CO., LTD
14N65K-MT
Preliminary
14A, 650V N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 14N65K-MT is an N-Channel enhancement mode
power MOSFET. The device adopts planar stripe and uses DMOS
technology to minimize and provide lower on-state resistance and
faster switching speed. It can also withstand high energy pulse
under the avalanche and commutation mode conditions.
The UTC 14N65K-MT is ideally suitable for high efficiency switch
mode power supply, power factor correction and electronic lamp
ballast based on half bridge topology.
FEATURES
* RDS(ON) < 0.63@ VGS = 10V, ID = 7 A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1
TO-220F2
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
14N65KL-TF2-T
14N65KG-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F2
Pin Assignment
123
GDS
Packing
Tube
14N65KL-TF2-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TF2: TO-220F2
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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14N65K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Single Pulsed Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
ID
IDM
IAR
EAS
dv/dt
650 V
±30 V
14 A
48 A
14 A
325 mJ
4.5 V/ns
Power Dissipation (TC=25°C)
PD 150 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 3.31mH, IAS = 14A, VDD = 50V, RG= 25, Starting TJ = 25°C
4. ISD14A, di/dt 200A/μs, VDDBVDSS, Starting TJ= 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
Junction to Case
θJA 62.5
θJC 0.83
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250 μA
VDS = 650V, VGS = 0V
650 V
10 μA
Gate-Source Leakage Current
IGSS
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250mA,Referenced to 25°C
100 nA
-100 nA
0.5 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 7A
2.0 4.0 V
0.63
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
980 pF
185 pF
10 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
89 nS
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDS=30V, ID=0.5A, RG=25
(Note 1, 2)
116 nS
388 nS
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tF
QG
QGS
VGS=10V, VDS=50V, ID=1.3A
(Note 1, 2)
QGD
145 nS
47 nC
12.2 nC
11.6 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0V, IS = 14A
1.4 V
Maximum Continuous Drain-Source Diode
Forward Current
IS
14 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
56 A
Notes: 1. Pulse Test : Pulse width300μs, Duty cycle2%
2. Essentially independent of operating ambient temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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14N65K-MT
Preliminary
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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14N65K-MT
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS 90%
Power MOSFET
Switching Test Circuit
10%
VGS
tD(ON)
tR
tD(OFF)
tF
Switching Waveforms
VGS
10V
QGS
QG
QGD
Gate Charge Test Circuit
Charge
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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14N65K-MT
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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