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Two-color detector
K11908-010K
Two InGaAs PIN PD with different spectral response are
arranged one above the other to cover a broad wavelength range
The K11908-010K incorporates an InGaAs PIN photodiode (cutoff wavelength: λc=1.7 μm) mounted over a long wavelength
type InGaAs PIN photodiode (λc=2.55 μm), along the same optical axis. The spectral response covered from 0.9 μm to 2.55
μm as wide range and delivers low noise.
Features
InGaAs (λc=1.7 μm) mounted over InGaAs
(λc=2.55 μm) along the same optical axis
Wide spectral response range: 0.9 to 2.55 μm
Low noise, low dark current
Applications
Radiation thermometer
Spectroscopy
Optical measurement equipment
Structure
Parameter
Window material
Package
Photosensitive area
Symbol
-
-
-
Condition
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
Specication
Borosilicate glass
4-pin TO-5
2.4 × 2.4
φ1.0
Unit
-
-
mm
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR max
Topr
Tstg
Condition
InGaAs (λc=1.7 μm), Ta=25 °C
InGaAs (λc=2.55 μm), Ta=25 °C
Value
2
1
-40 to +70
-55 to +85
Unit
V
°C
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
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Tow-color detector
K11908-010K
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response
range
Peak sensitivity
wavelength
Photosensitivity
Dark current
Cutoff frequency
Terminal capacitance
Shunt resistance
Detectivity
Symbol
λ
λp
S
ID
fc
Ct
Rsh
D*
Condition
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
InGaAs (λc=1.7 μm), λ=λp
InGaAs (λc=2.55 μm), λ=λp
InGaAs (λc=1.7 μm), VR=1 V
InGaAs (λc=2.55 μm), VR=0.5 V
InGaAs (λc=1.7 μm), -3 dB
VR=0 V, RL=50 Ω
InGaAs (λc=2.55 μm), -3 dB
VR=0 V, RL=50 Ω
InGaAs (λc=1.7 μm), VR=0 V
f=1 MHz
InGaAs (λc=2.55 μm), VR=0 V
f=1 MHz
InGaAs (λc=1.7 μm), VR=10 mV
InGaAs (λc=2.55 μm), VR=10 mV
InGaAs (λc=1.7 μm), λ=λp
InGaAs (λc=2.55 μm), λ=λp
Min.
-
-
-
-
0.85
0.7
-
-
1
2
-
-
1
2.8
1 × 1012
2 × 1010
Typ.
0.9 to 1.7
1.7 to 2.55
1.55
2.1
0.95
1.0
5
3
2
6
1.5
0.5
10
14
5 × 1012
7 × 1010
Max.
-
-
-
-
-
-
40
30
-
-
2.5
1
-
-
-
-
Unit
μm
μm
A/W
nA
μA
MHz
nF
MΩ
kΩ
cmăHz1/2/W
Spectral response
1.2
(Typ. Ta=25 °C)
1.0
0.8
InGaAs (λc=2.55 µm)
0.6
0.4 InGaAs (λc=1.7 µm)
0.2
0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Wavelength (µm)
KIRDB0479EA
Sensitivity temperature characteristic
2.0 (Typ. VR=0 V, Ta=15 to 65 °C)
1.5
InGaAs (λc=1.7 µm)
1.0
0.5
0
-0.5
InGaAs (λc=2.55 µm)
-1.0
-1.5
-2.0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Wavelength (µm)
KIRDB0495EA
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Tow-color detector
K11908-010K
Linearity
(Typ. Ta=25 °C, λ=1.3 µm, RL=2 Ω, VR=0 V)
102
InGaAs (λc=1.7 µm)
100
98
96
94
92
InGaAs (λc=2.55 µm)
90
0 2 4 6 8 10 12 14 16
Incident light level (mW)
KIRDB0496EA
Dark current vs. reverse voltage
1 mA
(Typ. Ta=25 °C)
100 µA
10 µA
InGaAs (λc=2.55 µm)
1 µA
100 nA
10 nA
InGaAs (λc=1.7 µm)
1 nA
100 pA
0.01
0.1 1
Reverse voltage (V)
10
KIRDB0480EA
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 °C, f=1 MHz)
InGaAs (λc=1.7 µm)
1 nF
100 pF
InGaAs (λc=2.55 µm)
10 pF
0.001
0.01
0.1
1
Reverse voltage (V)
10
KIRDB0481EA
Shunt resistance vs. element temperature
10 GΩ
(Typ. VR=10 mV)
1 GΩ
100 MΩ
InGaAs (λc=1.7 µm)
10 MΩ
1 MΩ
100 kΩ
10 kΩ
1 kΩ
InGaAs (λc=2.55 µm)
100 Ω
10 Ω
-40
-20
0
20 40 60 80
Element temperature (°C)
KIRDB0482EA
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Tow-color detector
Dimensional outline (unit: mm)
Window
6.3 ± 0.1
InGaAs (λc=1.7 µm)
9.1 ± 0.3
8.3 ± 0.2
K11908-010K
InGaAs (λc=2.55 µm)
0.43
lead
5.1 ± 0.2
InGaAs (λc=1.7 µm) cathode
InGaAs (λc=1.7 µm) anode
InGaAs (λc=2.55 µm) cathode
InGaAs (λc=2.55 µm) anode
KIRDA0218EA
Information described in this material is current as of May, 2012.
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KIRD1116E01 May 2012 DN
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