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Two-color detector
K11908-010K
Two InGaAs PIN PD with different spectral response are
arranged one above the other to cover a broad wavelength range
The K11908-010K incorporates an InGaAs PIN photodiode (cutoff wavelength: λc=1.7 μm) mounted over a long wavelength
type InGaAs PIN photodiode (λc=2.55 μm), along the same optical axis. The spectral response covered from 0.9 μm to 2.55
μm as wide range and delivers low noise.
Features
InGaAs (λc=1.7 μm) mounted over InGaAs
(λc=2.55 μm) along the same optical axis
Wide spectral response range: 0.9 to 2.55 μm
Low noise, low dark current
Applications
Radiation thermometer
Spectroscopy
Optical measurement equipment
Structure
Parameter
Window material
Package
Photosensitive area
Symbol
-
-
-
Condition
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
Specication
Borosilicate glass
4-pin TO-5
2.4 × 2.4
φ1.0
Unit
-
-
mm
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR max
Topr
Tstg
Condition
InGaAs (λc=1.7 μm), Ta=25 °C
InGaAs (λc=2.55 μm), Ta=25 °C
Value
2
1
-40 to +70
-55 to +85
Unit
V
°C
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
www.hamamatsu.com
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Tow-color detector
K11908-010K
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response
range
Peak sensitivity
wavelength
Photosensitivity
Dark current
Cutoff frequency
Terminal capacitance
Shunt resistance
Detectivity
Symbol
λ
λp
S
ID
fc
Ct
Rsh
D*
Condition
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
InGaAs (λc=1.7 μm), λ=λp
InGaAs (λc=2.55 μm), λ=λp
InGaAs (λc=1.7 μm), VR=1 V
InGaAs (λc=2.55 μm), VR=0.5 V
InGaAs (λc=1.7 μm), -3 dB
VR=0 V, RL=50 Ω
InGaAs (λc=2.55 μm), -3 dB
VR=0 V, RL=50 Ω
InGaAs (λc=1.7 μm), VR=0 V
f=1 MHz
InGaAs (λc=2.55 μm), VR=0 V
f=1 MHz
InGaAs (λc=1.7 μm), VR=10 mV
InGaAs (λc=2.55 μm), VR=10 mV
InGaAs (λc=1.7 μm), λ=λp
InGaAs (λc=2.55 μm), λ=λp
Min.
-
-
-
-
0.85
0.7
-
-
1
2
-
-
1
2.8
1 × 1012
2 × 1010
Typ.
0.9 to 1.7
1.7 to 2.55
1.55
2.1
0.95
1.0
5
3
2
6
1.5
0.5
10
14
5 × 1012
7 × 1010
Max.
-
-
-
-
-
-
40
30
-
-
2.5
1
-
-
-
-
Unit
μm
μm
A/W
nA
μA
MHz
nF
MΩ
kΩ
cmăHz1/2/W
Spectral response
1.2
(Typ. Ta=25 °C)
1.0
0.8
InGaAs (λc=2.55 µm)
0.6
0.4 InGaAs (λc=1.7 µm)
0.2
0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Wavelength (µm)
KIRDB0479EA
Sensitivity temperature characteristic
2.0 (Typ. VR=0 V, Ta=15 to 65 °C)
1.5
InGaAs (λc=1.7 µm)
1.0
0.5
0
-0.5
InGaAs (λc=2.55 µm)
-1.0
-1.5
-2.0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Wavelength (µm)
KIRDB0495EA
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Tow-color detector
K11908-010K
Linearity
(Typ. Ta=25 °C, λ=1.3 µm, RL=2 Ω, VR=0 V)
102
InGaAs (λc=1.7 µm)
100
98
96
94
92
InGaAs (λc=2.55 µm)
90
0 2 4 6 8 10 12 14 16
Incident light level (mW)
KIRDB0496EA
Dark current vs. reverse voltage
1 mA
(Typ. Ta=25 °C)
100 µA
10 µA
InGaAs (λc=2.55 µm)
1 µA
100 nA
10 nA
InGaAs (λc=1.7 µm)
1 nA
100 pA
0.01
0.1 1
Reverse voltage (V)
10
KIRDB0480EA
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 °C, f=1 MHz)
InGaAs (λc=1.7 µm)
1 nF
100 pF
InGaAs (λc=2.55 µm)
10 pF
0.001
0.01
0.1
1
Reverse voltage (V)
10
KIRDB0481EA
Shunt resistance vs. element temperature
10 GΩ
(Typ. VR=10 mV)
1 GΩ
100 MΩ
InGaAs (λc=1.7 µm)
10 MΩ
1 MΩ
100 kΩ
10 kΩ
1 kΩ
InGaAs (λc=2.55 µm)
100 Ω
10 Ω
-40
-20
0
20 40 60 80
Element temperature (°C)
KIRDB0482EA
3