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Two-color detector
K12729-010K
Wide spectral response range: 0.9 to 2.55 μm
Compact ceramic package
The K12729-010K is a two-color detector in a compact ceramic package, covering a wide spectral response range. Like the
current K11908-010K, it incorporates two InGaAs PIN photodiodes with different spectral response, along the same optical
axis. It features low noise and low dark current and supports reow soldering.
Features
Wide spectral response range
Compact, low noise, low dark current
Supports reflow soldering
Applications
Spectrophotometers
Radiation thermometers
Structure
Parameter
Window material
Package
Photosensitive area
Symbol
-
-
-
Condition
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
Specication
Borosilicate glass
Ceramic
2.4 × 2.4
ϕ1.0
Unit
-
-
mm
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR max
Topr
Tstg
Condition
InGaAs (λc=1.7 μm), Ta=25 °C
InGaAs (λc=2.55 μm), Ta=25 °C
No condensation
No condensation
Value
2
1
-20 to +70
-20 to +85
Unit
V
°C
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response
range
Peak sensitivity
wavelength
Photosensitivity
Dark current
Cutoff frequency
Terminal capacitance
Shunt resistance
Detectivity
Symbol
λ
λp
S
ID
fc
Ct
Rsh
D*
Condition
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
InGaAs (λc=1.7 μm), λ=λp
InGaAs (λc=2.55 μm), λ=λp
InGaAs (λc=1.7 μm), VR=10 mV
InGaAs (λc=2.55 μm), VR=10 mV
InGaAs (λc=1.7 μm), -3 dB
VR=0 V, RL=50 Ω
InGaAs (λc=2.55 μm), -3 dB
VR=0 V, RL=50 Ω
InGaAs (λc=1.7 μm), VR=0 V, f=1 MHz
InGaAs (λc=2.55 μm), VR=0 V, f=1 MHz
InGaAs (λc=1.7 μm), VR=10 mV
InGaAs (λc=2.55 μm), VR=10 mV
InGaAs (λc=1.7 μm), λ=λp
InGaAs (λc=2.55 μm), λ=λp
Min.
-
-
-
-
0.85
0.7
-
-
1
2
-
-
1
2.8
1 × 1012
2 × 1010
www.hamamatsu.com
Typ.
0.9 to 1.7
1.7 to 2.55
1.55
2.1
0.95
1.0
1
0.7
2
6
1.5
0.5
10
14
5 × 1012
7 × 1010
Max.
-
-
-
-
-
-
10
3.5
-
-
2.5
1
-
-
-
-
Unit
μm
μm
A/W
nA
μA
MHz
nF
MΩ
kΩ
cmHz1/2/W
1

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Two-color detector
K12729-010K
Spectral response
1.2
(Typ. Ta=25 °C)
1.0
0.8
InGaAs (λc=2.55 μm)
0.6
0.4 InGaAs (λc=1.7 μm)
0.2
0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Wavelength (μm)
KIRDB0479EB
Temperature characteristics of sensitivity
2.0 (Typ. VR=0 V, Ta=15 to 65 °C)
1.5
InGaAs (λc=1.7 μm)
1.0
0.5
0
-0.5
InGaAs (λc=2.55 μm)
-1.0
-1.5
-2.0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Wavelength (μm)
KIRDB0495EB
Spectral transmittance of window material
100 (Typ. Ta=25 °C)
98
96
94
92
90
88
86
84
82
80
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Wavelength (μm)
KIRDB0606EA
Dark current vs. reverse voltage
1 mA
(Typ. Ta=25 °C)
100 μA
10 μA
InGaAs (λc=2.55 μm)
1 μA
100 nA
10 nA
InGaAs (λc=1.7 μm)
1 nA
100 pA
0.01
0.1 1
Reverse voltage (V)
10
KIRDB0603EA
2

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Two-color detector
K12729-010K
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 °C, f=1 MHz)
InGaAs (λc=1.7 μm)
1 nF
100 pF
InGaAs (λc=2.55 μm)
10 pF
0.001
0.01 0.1
1
Reverse voltage (V)
Dimensional outline (unit: mm)
Index mark
6.6 ± 0.2
10
KIRDB0604EA
Shunt resistance vs. element temperature
10 GΩ
(Typ. VR=10 mV)
1 GΩ
100 MΩ
InGaAs (λc=1.7 μm)
10 MΩ
1 MΩ
100 kΩ
10 kΩ
1 kΩ
InGaAs (λc=2.55 μm)
100 Ω
10 Ω
-20 0 20 40 60 80
Element temperature (°C)
KIRDB0605EA
Recommended land mark pattern (unit: mm)
2.5 3.3 2.5
Ž
Photosensitive area
InGaAs (λ=2.5 μm)
Window
Photosensitive area
InGaAs (λc=1.7 μm)
2.0 ± 0.2
3.7 ± 0.2
Ž
Œ
2.5 ± 0.2
2.0 ± 0.2
ŒCathode
(InGaAs, λc=1.7 μm)
Anode
(InGaAs, λc=1.7 μm)
ŽCathode
(InGaAs, λc=2.55 μm)
Anode
(InGaAs, λc=2.55 μm)
(0.15)
Center position accuracy of
photosensitive area
-0.3≤X≤+0.3
-0.3≤Y≤+0.3
KIRDA0244EA
Œ
0.5
8.0
2.5 3.3 2.5
KIRDC0121EA
3