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Two-color detector
K12729-010K
Wide spectral response range: 0.9 to 2.55 μm
Compact ceramic package
The K12729-010K is a two-color detector in a compact ceramic package, covering a wide spectral response range. Like the
current K11908-010K, it incorporates two InGaAs PIN photodiodes with different spectral response, along the same optical
axis. It features low noise and low dark current and supports reow soldering.
Features
Wide spectral response range
Compact, low noise, low dark current
Supports reflow soldering
Applications
Spectrophotometers
Radiation thermometers
Structure
Parameter
Window material
Package
Photosensitive area
Symbol
-
-
-
Condition
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
Specication
Borosilicate glass
Ceramic
2.4 × 2.4
ϕ1.0
Unit
-
-
mm
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR max
Topr
Tstg
Condition
InGaAs (λc=1.7 μm), Ta=25 °C
InGaAs (λc=2.55 μm), Ta=25 °C
No condensation
No condensation
Value
2
1
-20 to +70
-20 to +85
Unit
V
°C
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response
range
Peak sensitivity
wavelength
Photosensitivity
Dark current
Cutoff frequency
Terminal capacitance
Shunt resistance
Detectivity
Symbol
λ
λp
S
ID
fc
Ct
Rsh
D*
Condition
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
InGaAs (λc=1.7 μm), λ=λp
InGaAs (λc=2.55 μm), λ=λp
InGaAs (λc=1.7 μm), VR=10 mV
InGaAs (λc=2.55 μm), VR=10 mV
InGaAs (λc=1.7 μm), -3 dB
VR=0 V, RL=50 Ω
InGaAs (λc=2.55 μm), -3 dB
VR=0 V, RL=50 Ω
InGaAs (λc=1.7 μm), VR=0 V, f=1 MHz
InGaAs (λc=2.55 μm), VR=0 V, f=1 MHz
InGaAs (λc=1.7 μm), VR=10 mV
InGaAs (λc=2.55 μm), VR=10 mV
InGaAs (λc=1.7 μm), λ=λp
InGaAs (λc=2.55 μm), λ=λp
Min.
-
-
-
-
0.85
0.7
-
-
1
2
-
-
1
2.8
1 × 1012
2 × 1010
www.hamamatsu.com
Typ.
0.9 to 1.7
1.7 to 2.55
1.55
2.1
0.95
1.0
1
0.7
2
6
1.5
0.5
10
14
5 × 1012
7 × 1010
Max.
-
-
-
-
-
-
10
3.5
-
-
2.5
1
-
-
-
-
Unit
μm
μm
A/W
nA
μA
MHz
nF
MΩ
kΩ
cmHz1/2/W
1

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Two-color detector
K12729-010K
Spectral response
1.2
(Typ. Ta=25 °C)
1.0
0.8
InGaAs (λc=2.55 μm)
0.6
0.4 InGaAs (λc=1.7 μm)
0.2
0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Wavelength (μm)
KIRDB0479EB
Temperature characteristics of sensitivity
2.0 (Typ. VR=0 V, Ta=15 to 65 °C)
1.5
InGaAs (λc=1.7 μm)
1.0
0.5
0
-0.5
InGaAs (λc=2.55 μm)
-1.0
-1.5
-2.0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Wavelength (μm)
KIRDB0495EB
Spectral transmittance of window material
100 (Typ. Ta=25 °C)
98
96
94
92
90
88
86
84
82
80
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Wavelength (μm)
KIRDB0606EA
Dark current vs. reverse voltage
1 mA
(Typ. Ta=25 °C)
100 μA
10 μA
InGaAs (λc=2.55 μm)
1 μA
100 nA
10 nA
InGaAs (λc=1.7 μm)
1 nA
100 pA
0.01
0.1 1
Reverse voltage (V)
10
KIRDB0603EA
2

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Two-color detector
K12729-010K
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 °C, f=1 MHz)
InGaAs (λc=1.7 μm)
1 nF
100 pF
InGaAs (λc=2.55 μm)
10 pF
0.001
0.01 0.1
1
Reverse voltage (V)
Dimensional outline (unit: mm)
Index mark
6.6 ± 0.2
10
KIRDB0604EA
Shunt resistance vs. element temperature
10 GΩ
(Typ. VR=10 mV)
1 GΩ
100 MΩ
InGaAs (λc=1.7 μm)
10 MΩ
1 MΩ
100 kΩ
10 kΩ
1 kΩ
InGaAs (λc=2.55 μm)
100 Ω
10 Ω
-20 0 20 40 60 80
Element temperature (°C)
KIRDB0605EA
Recommended land mark pattern (unit: mm)
2.5 3.3 2.5
Ž
Photosensitive area
InGaAs (λ=2.5 μm)
Window
Photosensitive area
InGaAs (λc=1.7 μm)
2.0 ± 0.2
3.7 ± 0.2
Ž
Œ
2.5 ± 0.2
2.0 ± 0.2
ŒCathode
(InGaAs, λc=1.7 μm)
Anode
(InGaAs, λc=1.7 μm)
ŽCathode
(InGaAs, λc=2.55 μm)
Anode
(InGaAs, λc=2.55 μm)
(0.15)
Center position accuracy of
photosensitive area
-0.3≤X≤+0.3
-0.3≤Y≤+0.3
KIRDA0244EA
Œ
0.5
8.0
2.5 3.3 2.5
KIRDC0121EA
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Two-color detector
K12729-010K
Measured example of temperature profile with our hot-air reflow oven for product testing
300
260 °C max
250
200
150
100
50
0
0 50 100 150 200 250 300 350 400 450 500 550
Time (s)
KIRDC0122EA
After unpacking, store the device in an environment at a temperature range of 5 to 30 °C and a humidity of 60% or less, and perform
reow soldering within 4 weeks.
The thermal stress applied to the device during reow soldering varies depending on the circuit board and the reow oven that is
used.
When setting the reow conditions, verify that the reliability of the device is not compromised by the reow soldering process.
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Two-color detector
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
Notice
Metal, ceramic, plastic packages
Technical information
Infrared detector / Technical information
K12729-010K
Information described in this material is current as of August, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KIRD1129E01 Aug. 2014 DN
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