IKP20N60H3.pdf 데이터시트 (총 16 페이지) - 파일 다운로드 IKP20N60H3 데이타시트 다운로드

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IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology
withsoft,fastrecoveryanti-paralleldiode
IKP20N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl

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IKP20N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology

Features:
TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
GC E
G
C
C
E
KeyPerformanceandPackageParameters
Type
VCE IC VCEsat,Tvj=25°C
IKP20N60H3
600V 20A
1.95V
Tvjmax
175°C
Marking
K20H603
Package
PG-TO220-3
2 Rev.2.2,2014-03-12

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IKP20N60H3
Highspeedswitchingseriesthirdgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3 Rev.2.2,2014-03-12

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IKP20N60H3
Highspeedswitchingseriesthirdgeneration
Maximumratings
Parameter
Collector-emittervoltage,Tvj25°C
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax
Turn off safe operating area
VCE600V,Tvj175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax
Gate-emitter voltage
Short circuit withstand time
VGE=15.0V,VCC400V
Allowed number of short circuits < 1000
Time between short circuits: 1.0s
Tvj=150°C
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tvj
Tstg
M
Value
600
40.0
20.0
80.0
80.0
20.0
10.0
80.0
±20
5
170.0
85.0
-40...+175
-55...+150
260
0.6
Unit
V
A
A
A
A
A
V
µs
W
°C
°C
°C
Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
Max.Value
Unit
0.88 K/W
1.89 K/W
62 K/W
4 Rev.2.2,2014-03-12

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IKP20N60H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=2.00mA
VGE=15.0V,IC=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=10.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.29mA,VCE=VGE
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=20.0A
min.
Value
typ.
max. Unit
600 -
-V
-
-
1.95 2.40
2.30 -
V
- 2.50 -
-
-
1.65 2.05
1.67 -
V
- 1.65 -
4.1 5.1 5.7 V
- - 40.0 µA
- - 1500.0
- - 100 nA
- 10.9 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Cies
Coes
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=20.0A,
VGE=15V
VGE=15.0V,VCC400V,
tSC5µs
Tvj=150°C
min.
Value
typ.
max. Unit
- 1100 -
- 70 - pF
- 32 -
- 120.0 - nC
- 7.0 - nH
- -A
120
5 Rev.2.2,2014-03-12