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UNISONIC TECHNOLOGIES CO., LTD
14N40K-MT
Preliminary
14A, 400V N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 14N40K-MT is an N-Channel enhancement mode
power MOSFET. The device adopts planar stripe and uses
DMOS technology to minimize and provide lower on-state
resistance and faster switching speed. It can also withstand high
energy pulse under the avalanche and commutation mode
conditions.
The UTC 14N40K-MT is ideally suitable for high efficiency
switch mode power supply, power factor correction and electronic
lamp ballast based on half bridge topology.
FEATURES
* RDS(ON) < 0.34@ VGS = 10V, ID = 7A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
1
TO-220
1
11
TO-220F1
TO-220F
TO-220F2
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
14N40KL-TA3-T
14N40KG-TA3-T
14N40KL-TF3-T
14N40KG-TF3-T
14N40KL-TF1-T
14N40KG-TF1-T
14N40KL-TF2-T
14N40KG-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
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Copyright © 2015 Unisonic Technologies Co., Ltd
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14N40K-MT
MARKING
Preliminary
Power MOSFET
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14N40K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 400 V
Gate-Source Voltage
Continuous Drain Current
VGSS ±30 V
ID 14 A
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
IDM 48 A
IAR 14 A
Single Pulsed Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
535 mJ
4.5 V/ns
TO-220
150 W
Power Dissipation (TC=25°C)
TO-220F/TO-220F1
TO-220F2
TO-220
PD
40 W
1.2 W/°C
Derate above 25°C
TO-220F/TO-220F1
TO-220F2
0.32 W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 5.46mH, IAS = 14A, VDD = 50V, RG= 25, Starting TJ = 25°C
4. ISD14A, di/dt 200A/μs, VDDBVDSS, Starting TJ= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATINGS
62.5
0.83
3.125
UNIT
°С/W
°С/W
°С/W
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14N40K-MT
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 1mA
400
V
Drain-Source Leakage Current
IDSS VDS = 400V, VGS = 0V
10 μA
Gate-Source Leakage Current
IGSS
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250mA,Referenced to 25°C
100 nA
-100 nA
0.5 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0 4.0 V
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 7A
0.26 0.34
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
810 pF
190 pF
10.5 pF
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS= 50V, VGS= 10V, ID= 0.3A,
ID=100µA (Note 1, 2)
VDS= 30V, VGS= 10V, ID =
0.3A,
RG = 25(Note 1, 2)
34.9
9.1
8.8
66
96
200
112
nC
nC
nC
nS
nS
nS
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0V, IS = 14A
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.4 V
14 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Notes: 1. Pulse Test : Pulse width300μs, Duty cycle2%.
2. Essentially independent of operating ambient temperature.
56 A
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14N40K-MT
Preliminary
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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