1N1184AM.pdf 데이터시트 (총 1 페이지) - 파일 다운로드 1N1184AM 데이타시트 다운로드

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Technical Data
DIODE
maximum ratings
Voltage, Reverse (VR)
Voltage, Reverse Peak (VRM)
Current at VR = OV (IO)
Current Average Rectified (IF)
Current Surge Peak (IFM)
Current, Surge (IFM) at tp = 8.3 ms
Max. Power Dissipation (PT) at TC = 25 °C
Max. Thermal Resistance (Rth J-C)
Max. Junction Temperature (TJ)
100.0 V
empty
V
40.0 A
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A
500.0 A
1000.0 A
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W
1.0 °C/W
175.0 °C
NO.
TYPE
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CASE
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1N1184AM
SILICON
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DO-5_M-6
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PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. IR
VR = 100.0 V
- 0.1 mA
2. IR
VR = 100.0 V, TJ = 140.0 ° C
- 10.0 mA
3. VF
IF = 40.0 A, TJ = 25.0 ° C
(1) - 1.2 V
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Notes
(1)pulse-tested tp 300 µs, duty cycle 2 %
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DIMENSIONS
in mm
Marking 1N1184AM
Customer GENERAL PURPOSE