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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF373/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 – 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28 volt transmitter equipment.
Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture
Output Power – 60 Watts
Power Gain – 13 dB
Efficiency – 50%
Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture
Output Power – 100 Watts (PEP)
Power Gain – 11.2 dB
Efficiency – 40%
IMD – –30 dBc
D
Excellent Thermal Stability
100% Tested for Load Mismatch Stress at All
Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz,
60 Watts CW
In Tape and Reel. R1 = 500 units per 32 mm,
13 inch Reel.
G
S
MRF373R1
MRF373SR1
470 – 860 MHz, 60 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETS
CASE 360B–05, STYLE 1
NI–360
MRF373R1
CASE 360C–05, STYLE 1
NI–360S
MRF373SR1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
MRF373SR1
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
MRF373SR1
MRF373R1
Symbol
RθJC
RθJC
Value
65
±20
7
173
1.33
– 65 to +150
200
Max
0.75
1
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Unit
°C/W
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF373R1 MRF373SR1
1
Archived 2005

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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID =1 µA)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
V(BR)DSS
IDSS
IGSS
65
– Vdc
1 µAdc
1 µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 200 µA)
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
Forward Transconductance
(VDS = 10 V, ID = 3 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
VGS(th)
2
3
4 Vdc
VGS(Q)
3
4
5 Vdc
VDS(on)
0.6 0.8 Vdc
gfs 2.2 2.9
–S
Ciss
79
– pF
Coss
46
– pF
Crss
4
– pF
FUNCTIONAL CHARACTERISTICS, CW Operation
Common Source Power Gain
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz)
Drain Efficiency
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz)
Load Mismatch
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz,
Load VSWR at 5:1 at All Phase Angles)
Gps 13 14.7
η 50 54
– dB
–%
ψ
No Degradation in Output Power
TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373SR1), Broadband Fixture
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
Gps – 11.2
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
η – 40 – %
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
IMD – –30 – dBc
MRF373R1 MRF373SR1
2
MOTOROLA RF DEVICE DATA
Archived 2005

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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
VGG
R2 C15 C14 C13
R1
C4 C1
RF
INPUT Z1
Z2 Z3 Z4
C8
Z5
C6
Z6
C5
Z7
Z8 Z9
C2
VDD
C10
L1
C11 C12
Z10 Z11
RF
Z12 OUTPUT
C7
C3
C9
C1
C2
C3
C4, C5, C6
C7, C8
C9
C10, C13
C11
C12
C14
C15
L1
R1
R2
4.7 pF, B Case Chip Capacitor, ATC
15 pF, B Case Chip Capacitor, ATC
6.8 pF, B Case Chip Capacitor, ATC
10 pF, B Case Chip Capacitor, ATC
47 pF, B Case Chip Capacitor, ATC
0.2 pF, B Case Chip Capacitor, ATC
300 pF, B Case Chip Capacitor, ATC, Side Mounted
2) 2.2 mF, 50 V, Kemet P/N C1825C225
22 mF, 50 V, Kemet P/N T491D226K50AS
2) 1.0 mF, 50 V, Kemet P/N C1825C105
10 mF, 35 V, Kemet P/N T491D106K35AS
22 nH, Coilcraft P/N B07T
1.2 k, Vishay Dale Chip Resistor (1206)
12 k, Vishay Dale Chip Resistor (1206)
Connectors N–Type (female), M/A Com P/N 3052–1648–10
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
Heatsink
(GX–0300–55), height 30 mils, εr = 2.55
Motorola P/N 95–11LDMOSKPS–1
LDMOS m250 3x 5Bedstead
Insert
Motorola P/N 95–11LDMOSKPS–2
Insert for LDMOS m250 3x 5Bedstead
End Plates 2) Motorola P/N 93–3MB–9, End Plate for
Type–N Connector
Banana Jack and Nut
2) Johnson P/N 108–0904–001
Brass Banana Jack
2) H.H. Smith P/N SM–101
Figure 1. Single–Ended Narrowband Test Circuit Schematic (MRF373R1)
TO GATE
BIAS SUPPLY
R2
C8
C14
C15
C13
R1
C4
C1
C11 C12
C10
L1
C6 C5
C2 C3
TO DRAIN
BIAS SUPPLY
C7
C9
MRF373
Figure 2. Single–Ended Narrowband Test Circuit Layout
(Suitable for Use with MRF373R1)
MOTOROLA RF DEVICE DATA
MRF373R1 MRF373SR1
3
Archived 2005

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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Figure 3. MRF373R1 Narrowband Test Fixture Photo
VGG
R2 C25 C24 C23 R1
RF
INPUT
Z1
Z2 Z3
C10
C11
Z4 Z5 Z6
C9
Z7 Z8
C8
VDD
C7
Z10
Z9
C1
Z11 Z12
C2
C20
L1
C21 C22
Z13 Z14 Z15
Z16
C5
C3 C4
RF
OUTPUT
C6
C1, C2
C3
C4, C11
C5, C10
C6
C7
C8
C9
C20, C23
C21
C24
C22
C25
L1
R1
R2
18 pF, B Case Chip Capacitor, ATC
12 pF, B Case Chip Capacitor, ATC
0.8 pF, B Case Chip Capacitor, ATC
68 pF, B Case Chip Capacitor, ATC
0.3 pF, B Case Chip Capacitor, ATC
15 pF, B Case Chip Capacitor, ATC
10 pF, B Case Chip Capacitor, ATC
1.8 pF, B Case Chip Capacitor, ATC
300 pF, B Case Chip Capacitor, ATC, Side Mounted
2) 2.2 mF, 100 V, Vishay P/N VJ3640Y225KXBAT
2) 1.0 mF, 50 V, Kemet P/N C1825C105
22 mF, 35 V, Kemet P/N T491D226K35AS
10 mF, 35 V, Kemet P/N T491D106K35AS
22 nH, Coilcraft P/N B07T
1.2 k, Vishay Dale Chip Resistor (1206)
12 k, Vishay Dale Chip Resistor (1206)
Connectors N–Type (female), M/A Com P/N 3052–1648–10
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
(GX–0300–55), height 30 mils, εr = 2.55
(new PCB’s available from CMR)
Heatsink Motorola P/N 95–11LDMOSKPS–1
LDMOS m250 3x 5Bedstead
Insert
Motorola P/N 95–11LDMOSKPS–2S
Insert for LDMOS m250S 3x 5Bedstead
End Plates 2) Motorola P/N 93–3MB–9, End Plate for
Type–N Connector
Banana Jack and Nut
2) Johnson P/N 108–0904–001
Brass Banana Jack
2) H.H. Smith P/N SM–101
Figure 4. Single–Ended Narrowband Test Circuit Schematic (MRF373SR1)
MRF373R1 MRF373SR1
4
MOTOROLA RF DEVICE DATA
Archived 2005

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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
TO GATE
BIAS SUPPLY
R2
C10
C11
C24
C25
C23
R1
C7
C1
C9
C8
C2
C21
C20
L1
C3
C22
C5
C4
TO DRAIN
BIAS SUPPLY
C6
MRF373S
Figure 5. Single–Ended Narrowband Test Circuit Layout
(Suitable for Use with MRF373SR1)
Figure 6. MRF373SR1 Narrowband Test Circuit Photo
MOTOROLA RF DEVICE DATA
MRF373R1 MRF373SR1
5
Archived 2005