MJE13003-E.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 MJE13003-E 데이타시트 다운로드

No Preview Available !

UNISONIC TECHNOLOGIES CO., LTD
MJE13003-E
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
The UTC MJE13003-E designed for use in high–volatge,
high speed,power switching in inductive circuit, It is particularly
suited for 115 and 220V switchmode applications such as
switching regulator’s,inverters, DC-DC converter, Motor
control, Solenoid/Relay drivers and deflection circuits.
FEATURES
*Collector-Emitter Sustaining Voltage:
VCEO (sus)=300V.
*Collector-Emitter Saturation Voltage:
VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A
*Switch Time- tf =0.7μs(Max.) @Ic=1.0A.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K
MJE13003L-E-x-T92-B MJE13003G-E-x-T92-B
MJE13003L-E-x-T92-K MJE13003G-E-x-T92-K
MJE13003L-E-x-T92-A-B MJE13003G-E-x-T92-A-B
MJE13003L-E-x-T92-A-K MJE13003G-E-x-T92-A-K
Package
TO-126S
TO-92
TO-92
TO-92
TO-92
Pin Assignment
123
BCE
BCE
BCE
ECB
ECB
Packing
Bulk
Tape Box
Bulk
Tape Box
Bulk
MARKING INFORMATION
PACKAGE
TO-126S
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
MARKING
1 of 8
QW-R223-009.D

No Preview Available !

MJE13003-E
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Continuous
Peak (1)
Base Current
Continuous
Peak (1)
Emitter Current
Continuous
Peak (1)
TA=25°C
TO-92
TO-126S
Derate
TO-92
Total Power Dissipation
above 25°C TO-126S
TC=25°C
TO-92
TO-126S
Derate
TO-92
above 25°C TO-126S
Junction Temperature
Storage Temperature
SYMBOL
VCEO(SUS)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
TJ
TSTG
RATINGS
400
700
9
1.5
3
0.75
1.5
2.25
4.5
1.1
1.4
8
11.2
1.5
20
12
160
150
-65 to +150
UNIT
V
V
V
A
A
A
W
W/°C
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-92
TO-126S
θJA
113.6
89
°C/W
Junction to Case
TO-92
TO-126S
θJC
80
6.25
°C/W
Maximum Load Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds
TL
275 °C
Note: 1. Pulse Test : Pulse Width=5ms,Duty Cycle10%
2. Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most
circuits entirely from the information presented. SOA Limit curves – representing boundaries on device
characteristics – are given to facilitate “Worst case” design.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R223-009.D

No Preview Available !

MJE13003-E
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
SECOND BREAKDOWN
DC Current Gain
Collector-Emitter Saturation Voltage
SYMBOL
VCEO(SUS)
ICEV
hFE1
hFE2
hFE3
VCE(SAT)
Base-Emitter Saturation Voltage
V BE(SAT)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
fT
Cob
SWITCHING CHARACTERISTICS (TABLE 1)
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
INDUCTIVE LOAD, CLAMPED (TABLE 1, FIGURE 7)
Storage Time
tsv
Crossover Time
tc
Fall Time
tfi
TEST CONDITIONS
IC=10 mA , IB=0
VCEV=Rated Value, VBE(off)=1.5 V
VCEV=Rated Value,
VBE(off)=1.5V,Tc=100°C
IC=0.5 A, VCE=2V
IC=1 A, VCE=2V
IC=200mA, VCE=10V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25 A
IC=100mA, VCE=10 V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
VCC=125V, IC=1A,
IB1=IB2=0.2A, tP=25μs,
Duty Cycle1%
IC=1A,Vclamp=300V,
IB1=0.2A,VBE(off)=5V,TC=100°C
MIN TYP MAX UNIT
400 V
1 mA
5 mA
8 40
3 25
9 40
0.5
2.5 V
3
1
1.2
V
4 10
21
MHz
pF
0.05 0.1
0.5 1
24
0.4 0.7
μs
μs
μs
μs
1.7 4
0.29 0.75
0.15
μs
μs
μs
CLASSIFICATION OF hFE1
RANK
RANGE
A
8 ~ 16
B
15 ~ 21
C
20 ~ 26
D
25 ~ 31
E
30 ~ 36
F
35 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R223-009.D

No Preview Available !

MJE13003-E
NPN EPITAXIAL SILICON TRANSISTOR
APPLICATION INFORMATION
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
+5V VCC
0.001µF
1N4933 33
MJE210
L MR826*
pw 5V
DUTY CYCLE? 10%
tr,tf? 10ns
68
33 1N4933
2N2222
1K
1K
+5V
RB
IB
1N4933
0.02µF 270
NOTE
PWand Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
1K T.U.T.
2N2905
MJE200
47
1/2W 100
-VBE(off)
IC Vclamp
*SELECTEDFOR? 1KV
5.1K
VCE
51
Coil Data :
GAP for 30 mH/2 A
VCC=20V
Ferroxcube core #6656
Lcoil=50mH
Vclamp=300V
Full Bobbin ( ~ 200 Turns) #20
Output Waveforms
OUTPUT WAVEFORMS
IC IC(pk)
t1
VCE VCE or
Vclamp
TIME
tf CLAMPED
t
tf
t2 t
t1 Adjusted to
Obtain Ic
t1=
Lcoil(Icpk)
Vcc
t2=
Lcoil(Icpk)
Vclamp
Test Equipment
Scope-Tektronics
475 or Equivalent
Resistive
Switching
+125V
Rc
RB TUT
SCOPE
D1
-4.0V
VCC=125V
RC=125
D1=1N5820 or
Equiv.
RB=47
+10.3V
25μS
0
-8.5V
tr,tf<10ns
Duty Cycly=1.0%
RB and Rc adjusted
for desired IB and Ic
IC
(AMP)
0.5
1
TC
(°C)
25
100
25
100
TSV
(μs)
1.3
1.6
1.5
1.7
Table 2. Typical Inductive Switching Performance
TRV
(μs)
0.23
0.26
0.10
0.13
TFI
(μs)
0.30
0.30
0.14
0.26
TTI
(μs)
0.35
0.40
0.05
0.06
TC
(μs)
0.30
0.36
0.16
0.29
1.5
25
100
1.8 0.07 0.10 0.05 0.16
3 0.08 0.22 0.08 0.28
Note: All Data Recorded in the inductive Switching Circuit Table 1
Fig 1. Inductive Switching Measurements
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R223-009.D

No Preview Available !

MJE13003-E
SWITCHING TIMES NOTE
NPN EPITAXIAL SILICON TRANSISTOR
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase, However, for inductive loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each wave form to determine the total switching time, For this reason, the following new terms have
been defined.
tSV=Voltage Storage Time, 90% IB1 to 10% Vclamp
tRV=Voltage Rise Time, 10-90% Vclamp
tFI=Current Fall Time, 90-10% IC
tTI=Current Tail, 10-2% IC
tC=Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms is shown in Figure 1 to aid in the visual identity of
these terms.
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN-222:
PSWT=1/2 VccIc (tc)f
In general, trv + tfitc. However, at lower test currents this relationship may not be valid.
As is common with most switching transistor, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications
which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at
100°C.
RESISTIVE SWITCHING PERFORMANCE
2
1
0.7 tR
0.5
Collector Current, IC (A)
Vcc=125V
Ic/IB=5
TJ=25°C
0.3
0.2
0.1
0.07
0.05
td @ VBE(off)=5V
0.03
0.02
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5
0.7
1
0
Fig 2. Turn-On Time
20
Collector Current, IC (A)
10
7
5
tS
Vcc=125V
Ic/IB=5
TJ=25°C
3
2
1
0.7
0.5
0.3 tR
0.2
0.1
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1
Fig 3. Turn-Off Time
2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R223-009.D