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MOSFET 70A 450500V
PD10M441L PD10M440L
P2H10M441L P2H10M440L
PD10M441L/440L
P2H10M441L/440L
108.0
108.0
Approximate Weight :220g
最大定格 Maximum Ratings
Approximate Weight :220g
Rating
Drain-Source Voltage
Symbol
VDSS
PD10M441L/P2H10M441L
450
VGS=0V
Grade
PD10M440L/P2H10M440L
500
Unit
V
Gate-Source Voltage
Continuous Drain Current
Duty=50%
D.C.
VGSS
ID
20
70 c=25
50 c=25
V
A
Pulsed Drain Current
IDM
140 c=25
A
Total Power Dissipation
PD
500 c=25
W
Operating Junction Temperature Range
Tjw
40 +150
Storage Temperature Range
RMS Isolation Voltage
Mountin1g Torque
Tstg
Viso -
Ftor
3.0
2.0
40 +125
2000
,AC1
Terminals to Base, AC 1 min .
Module Base to Heat sink
Bus bar to Main Terminals
V
Nm

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Fig. 1 Typical Output Characteristics
120 TC=25ı 250 s Pulse Test
10V
100 6V
80
Fig. 2 Typical Drain-Source On-Voltage
Fig. 2 Vs. Gate-Source Voltage
12 TC=25ı 250 s Pulse Test
10
8
ID=85A
Fig. 3 Typical Drain-Source On Voltage
Fig. 3 Vs. Junction Temperature
VGS=10V 250 s Pulse Test
ID=85A
0.2
40A
20A
60 6
40 4
VGS=5V
20 2
0.1
40A
20A
0 4V
0 2 4 6 8 10 12
DRAIN TO SOURCE VOLTAGE VDS (V)
Fig. 4 Typical Capacitance
Fig. 4 Vs. Drain-Source Voltage
30 VGS=0V f=1kHz
24
18 Ciss
12 Coss
6
Crss
0
0 4 8 12 16
GATE TO SOURCE VOLTAGE VGS (V)
Fig. 5 Typical Gate Charge
Fig. 5 Vs. Gate-Source Voltage
16 ID=50A
VDD= 100V
250V
400V
12
8
4
0
-40 0
40 80 120 160
JUNCTION TEMPERATURE Tj ( )
Fig. 6 Typical Switching Time
Fig. 6 Vs. Series Gate impedance
10 ID=40A VDD=250V TC=25ı 80 s Pulse Test
5
2
1
toff
0.5
ton
0.2
0
12
5 10 20
50 100
DRAIN TO SOURCE VOLTAGE VDS (V)
Fig. 7 Typical Switching Time
Fig. 7 Vs. Drain Current
1000
RG=7 VDD=250V TC=25ı 80 s Pulse Test
500
td(off)
200
td(on)
100 tr
tf
50
20
10
2
5 10 20
50 100 200
Fig. 10 Maximum Safe Operating Area
0
0 100 200 300 400 500 600
TOTAL GATE CHRAGE Qg (nC)
Fig. 8 Typical Source-Drain Diode Forward
Fig. 8 Characteristics
120 250 s Pulse Test
100
80
0.1
2
5 10 20
50 100 200
SERIES GATE IMPEDANCE RG ( )
Fig. 9 Typical Reverse Recovery Characteristics
2000
IS=70A IS=40A Tj=150ı
1000
500
trr
60
Tj=125ı
Tj=25ı
200
40
100
20
50
IR
0
0 0.2 0.4 0.6 0.8 1.0 1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
Fig. 11 Normalized Transient Thermal impedance(MOSFET)
0
100 200 300 400 500 600
-dis/dt (A/ s)
500 TC=25ı Tj=150ıMAX Single Pulse
Operation in this area
is limited by RDS (on)
200
100 10 s
50
100 s
20
10
1ms
5
2 10ms
1 DC
0.5
12
5 10 20
-441L -440L
50 100 200 5001000
DRAIN TO SOURCE VOLTAGE VDS (V)
2
100
5
2
10-1
5 Per Unit Base
Rth(j-c)=0.25ı/W
2 1 Shot Pulse
10
-2
10
-5
10-4
10-3
10-2
10-1
100
101
PULSE DURATION t (s)
M
O
S
F
E
T
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