SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-2mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-50µA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA
ICBO Collector cut-off current
IEBO Emitter cut-off current
VCB=-50V; IE=0
VEB=-4V; IC=0
hFE DC current gain
IC=-0.1A ; VCE=-3V
COB Output capacitance
IE=0; VCB=-10V;f=1MHz
fT Transition frequency
IE=50mA ; VCE=-10V
Product Specification
2SB1007
MIN TYP. MAX UNIT
-80 V
-80 V
-5 V
-0.2 -0.4
V
-0.5 µA
-0.5 µA
82 390
14 20 pF
100 MHz
hFE Classifications
PQ
82-180
120-270
R
180-390
2