B1007.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 B1007 데이타시트 다운로드

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·Complement to type 2SD1378
·High breakdown voltage
APPLICATIONS
·Low frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB1007
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-80
-80
-5
-0.7
1.2
10
150
-55~150
UNIT
V
V
V
A
W

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-2mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-50µA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA
ICBO Collector cut-off current
IEBO Emitter cut-off current
VCB=-50V; IE=0
VEB=-4V; IC=0
hFE DC current gain
IC=-0.1A ; VCE=-3V
COB Output capacitance
IE=0; VCB=-10V;f=1MHz
fT Transition frequency
IE=50mA ; VCE=-10V
Product Specification
2SB1007
MIN TYP. MAX UNIT
-80 V
-80 V
-5 V
-0.2 -0.4
V
-0.5 µA
-0.5 µA
82 390
14 20 pF
100 MHz
hFE Classifications
PQ
82-180
120-270
R
180-390
2

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1007
Fig.2 Outline dimensions
3