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PT480E00000F Phototransistor
PT480E00000F
Features
1. Side view detection type
2. Plastic mold with resin lens
3. Narrow directivity angle
4. Transparent resin
5. Lead free and RoHS directive component
Agency Approvals/Compliance
1. Compliant with RoHS directive (2002/95/EC)
2. Content information about the six substances
specified in “Management Methods for Control of
Pollution Caused by Electronic Information Prod-
ucts Regulation” (popular name: China RoHS)
(Chinese:
);
refer to page 8
Applications
1. Optoelectronic switches
2. Automatic stroboscopes
3. Office automation equipment
4. Audio visual equipment
5. Home appliances
6. Telecommunication equipment
7. Measuring equipment
8. Tooling machines
9. Computers
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1 Sheet No.: D1-A01901EN
Date Marcch 30, 2007
©SHARP Corporation

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Outline Dimensions
PT480E00000F
2-C0.5
R0.8 ±0.1
3.0
1.15
0.75
4° 4°
(1.7)
60°
0.15 MAX.
0.15
2
-
0.4
+0.3
-0.1
φ1.5 E. PIN
R0.5
2 - 0.87
2
-
0.45
+0.3
-0.1
(2.54)
1.6
(6°) (6°)
(6°) (6°)
Terminal connection
12
1
(6°)
2
(6°)
2.8
Pin Arrangement
No. Name
1 Emitter
NOTES:
2 Collector
1. Units: mm
2. Unspecified tolerence: ±0.2 mm
3. ( ): Reference dimensions
4. Package: Transparent epoxy resin
5. The thin burr thickness and the gate burr (0.5 mm MAX.) are not included in outline dimensions
6. Resin protrusion: 1.0 mm MAX. however, the thin burr adheres to the lead 1.4 MAX. from the resin
2
Sheet No.: D1-A01901EN

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PT480E00000F
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Symbol Rating Unit
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
VCEO
VECO
IC
PC
Topr
35
6
20
75
-25 to +85
V
V
mA
mW
°C
Storage temperature
Tstg -40 to +85 °C
Soldering temperature *1
Tsol
260 °C
*1 5 s (MAX.) positioned 1/4 mm from resin edge. see Figure 13
Electro-optical Charactertistics
Parameter
Collector current
Dark current
Collector-emitter saturation voltage
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Peak sensitivity wavelength
Symbol
IC
ICEO
VCE(sat)
BVCEO
BVECO
λp
Conditions *1
Ee = 1 mW/cm2, VCE = 5 V
Ee = 0, VCE = 20 V
Ee = 10 mW/cm2, IC = 0.5 mA
IC = 0.1 mA, Ee = 0
IE = 0.01 mA, Ee = 0
Response time (Rise)
Response time (Fall)
tr VCE = 2 V, IC = 2 mA,
tf RL = 100 Ω
*1 Ee: Irradiance by CIE standard light source A (tungsten lamp)
MIN.
0.4
35
6.0
TYP.
1.7
1.0
0.1
800
3.0
3.5
(Ta = 25°C)
MAX. Unit
6.0 mA
100 nA
0.4 V
–V
–V
– nm
– µs
– µs
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
75
70
60
50
40
30
20
15
10
0
-25 0
25 50 75 85 100
Ambient temperature Ta (°C)
Fig. 2 Spectral Sensitivity
100
90
Ta = 25°C
80
70
60
50
40
30
20
10
0
400 500 600 700 800 900 1,000 1,100
wavelength λ (nm)
Sheet No.: D1-A01901EN
3