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UNISONIC TECHNOLOGIES CO., LTD
14N50
Preliminary
14A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 14N50 is an N-Channel enhancement mode power
MOSFET. The device adopts planar stripe and uses DMOS
technology to minimize and provide lower on-state resistance and
faster switching speed. It can also withstand high energy pulse
under the avalanche and commutation mode conditions.
The UTC 14N50 is ideally suitable for high efficiency switch mode
power supply, power factor correction and electronic lamp ballast
based on half bridge topology.
1
FEATURES
* RDS(ON) < 0.42@VGS = 10V
* Ultra low gate charge (typical 43nC )
* Low reverse transfer Capacitance ( CRSS = typical 20pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
TO-263
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
14N50L-TQ2-T
14N50G-TQ2-T
14N50L-TQ2-R
14N50G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-263
TO-263
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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14N50
MARKING
Preliminary
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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14N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
Continuous Drain Current
VGSS
ID
±30
14
V
A
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
IDM 48 A
IAR 14 A
Single Pulsed Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
400 mJ
4.5 V/ns
Power Dissipation (TC=25°C)
Junction Temperature
PD 150 W
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 9.3mH, IAS = 13A, VDD = 50V, RG= 25,Starting TJ = 25°C
4. ISD13.A, di/dt 200A/μs, VDDBVDSS, Starting TJ= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
0.83
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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14N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 1mA
500
V
Drain-Source Leakage Current
IDSS VDS = 500V, VGS = 0V
10 μA
Gate-Source Leakage Current
IGSS
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250mA,Referenced to 25°C
100 nA
-100 nA
0.5 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 100μA
3 3.75 4.5 V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 7A
0.34 0.42
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V,
f=1.0MHz
2000
238
55
pF
pF
pF
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=400V, ID=12A,
VGS=10 V (Note 1,2)
VDD =250V, ID =14A,
RG =25(Note 1,2)
69 92 nC
12 nC
31 nC
24 nS
70 nS
54 nS
50 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0V, IS = 14A
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.6 V
14 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
56 A
Reverse Recovery Time
trr VGS = 0V, IS = 14A,
Reverse Recovery Charge
QRR dIF / dt =100A/μs (Note 1)
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating ambient temperature.
470 nS
3.1 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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14N50
Preliminary
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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