150FDR.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 150FDR 데이타시트 다운로드

No Preview Available !

SEMICONDUCTOR
150FD(R)Series RRooHHSS
Nell High Power Products
Fast Recovery Diodes
Stud Version, 150A
FEATURES
Alloy diode
Popular series for rough service
High voltage ratings up to 1200V
Stud cathode and stud anode version
RoHS compliant
Designed and qualified for industrial level
Glass passivated chip
Reverse recovery time (trr) < 500 nS
TYPICAL APPLICATIONS
Welders
Power supplies
Motor controls
Battery chargers
General industrial current rectification
Freewheeling diodes
High power drives
Fast recovery rectifier applications
PRODUCT SUMMARY
IF(AV)
150A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
IFSM
I2t
VRRM
trr
TJ
Maximum TC
50 HZ
60 HZ
50 HZ
60 HZ
Range
Tj = 25°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
150FD( R )
04
06
08
10
12
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400
600
800
1000
1200
Ceramic housing
( Metric stud )
DO-205AA(DO-8)
150FD(R)
150
125
3000
3141
45
40.9
400 to 1200
250 to 500
-40 to 175
UNIT
A
ºC
A
kA²s
V
nS
ºC
VRSM, MAXIMUM
NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
700
900
1100
1300
lRRM, MAXIMUM
AT TJ = 175 °C
mA
15
www.nellsemi.com
Page 1 of 6

No Preview Available !

SEMICONDUCTOR
150FD(R)Series RRooHHSS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at maximum case temperature
Maximum RMS forward current
Maximum peak, one cycle forward,
non-reptitive surge current
Maximum l²t for fusing
SYMBOL
IF(AV)
IF(RMS)
IFSM
I2t
TEST CONDITIONS
180° conduction, half sine wave
DC at 110°C
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
100%VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10ms 100%VRRM
t = 8.3ms reapplied
150D(R)
150
125
235.5
3000
3141
2519
2635
45
40.9
31.7
28.8
Maximum l²t for fusing
I2t t = 0.1 ms to 10 ms, no voltage reapplied
450
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
VF(TO)
rF
VFM
TJ = TJ Maximum
lpk = 470A, TJ = 25°C, tp = 10ms sinusoidal wave
0.95
1.05
1.65
UNIT
A
ºC
A
A
kA2s
kA2s
V
mΩ
V
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
Typical reverse recovery time
trr
Typical reverse recovered charge
Qrr
TJ = 25°C, IF = 0.5A, IR = 1.0A,
IRR = 250mA (RG#1 CKT)
TJ = 25°C, IF = 1A to VR = 30V,
-dlF/dt = 100 A/µs
TJ = 25°C, -dlF/dt = 25 A/µs,
lFM = π x rated lF(AV)
TJ = 25°C, IF = 1A to VR = 30V,
-dlF/dt = 100 A/µs
TJ = 25°C, -dlF/dt = 25 A/µs,
lFM = π x rated lF(AV)
150FD(R)
04 to 06 08 to 12
250 500
UNIT
60 120
ns
250 500
85 340
290 1300
nC
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and
storage temperature range
Maximum thermal resistace,
junction to case
TJ, Tstg
RthJC DC operation
Maximum thermal resistance
case to heatsink
Maximum allowable mounting torque
(+0% , -20%)
RthCS
Approximate weight
Case style
Mounting surface, smooth, flat and greased
Not lubricated threads
Lubricated threads
Ceramic housing
Glass-metal seal
(JEDEC) see dimensions -
link at the end of datasheet
150FD(R)
UNIT
- 40 to175
ºC
0.3
K/W
0.1
17
14.5
100
95
Nm
g
DO-205AA (DO-8)
www.nellsemi.com
Page 2 of 6

No Preview Available !

SEMICONDUCTOR
150FD(R)Series RRooHHSS
Nell High Power Products
RthJC CONDUCTION
CONDUCTION ANGEL SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDUCTIONS
180°
0.031
0.023
120°
90°
0.038
0.048
0.040
0.053
TJ = TJ maximum
60° 0.071
0.075
30° 0.120
0.121
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
Fig.1 Current ratings characteristics
180
RthJC(DC) = 0.3 K/W
160
140
Conduction Angle
120
100
30° 60°
90°
120°
180°
80
0
50 100 150
Average forward current (A)
200
Fig.2 Current ratings characteristics
180
160
140
RthJC(DC) = 0.3 K/W
Conduction Period
120
100
30° 60° 90°
120°
180°
DC
80
0 40 80 120 160 200 240 280
Average forward current (A)
Fig.3 Forward power loss characteristics
300
250
200
150
100
180°
120°
90°
60°
30°
RMS Limit
50
Conduction Angle
TJ = 175°C
R
0.4
thSA =
0.2 K/W
K/W
0.5
K/W
-
Delta
R
0.6 K/W
1.2 K/W
0
0 50 100 150 200 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
www.nellsemi.com
Page 3 of 6

No Preview Available !

SEMICONDUCTOR
150FD(R)Series RRooHHSS
Nell High Power Products
Fig.4 Forward power loss characteristics
300
250
200
200
180°
120°
90°
60°
30°
100
50
RMS Limit
DC
Conduction Period
TJ = 175°C
R
thSA = 0.5 K/W
0.2 K/W
- Delta R
0.4 K/W
0.6 K/W
0.8 K/W
1.2 K/W
0
0 50 100 150 200 250 300 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig.5 Maximum non-repetitive surge current
3500
3000
2500
At any rated load condition and with
rated vrrm applied following surge.
lnitial TJ =175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
2000
1500
1000 Per Junction
500
1
10 100
Number of equal amplitude half cycle
current pulses(N)
Fig.6 Maximum non-repetitive surge current
4000
3500
3000
2500
Maximum non repetitive surge current
versus pulse train duration.
Control of conduction may not be maintained.
lnitial TJ = 175°C
no voltage reapplied @ 50 Hz
rated Vrrm reapplied @ 50 Hz
2000
1500
1000 Per Junction
500
0.01
0.1
Pulse train duration (S)
1
Fig.7 Forward voltage drop characteristics
10000
1000
100
TJ = 25°C
TJ = 175°C
10
0.5 1 1.5 2 2.5 3
Instantaneous forward voltage (V)
Fig.8 Thermal lmpedance RthJC characteristic
1
Steady State Value
RthJC = 0.3 K/W
(DC Operation)
0.1
0.01
0.001
0.01
0.1
1
Square wave pulse duration (S)
10
www.nellsemi.com
Page 4 of 6

No Preview Available !

SEMICONDUCTOR
Fig .9 Typical reverse recovery time vs.
rate of fall of forward current.
104
400
400 to 600V
TJ = 125°C
lF = 265A
lF = 50A
lF = 1A
102
40
TJ = 25°C
lF = 265A
lF = 50A
lF = 1A
10
1
4 10
40 100
Rate of fall of forward current (A/µs)
Fig .11 Typical reverse recovery time vs.
rate of fall of forward current.
5000
4000
800 to 1200V
1000
TJ = 125°C
lF = 265A
lF = 50A
lF = 1A
400
300
200
100
1
TJ = 25°C
lF = 265A
lF = 50A
lF = 1A
4 10
40 100
Rate of fall of forward current (A/µs)
ORDERING INFORMATION TABLE
150FD(R)Series RRooHHSS
Nell High Power Products
Fig .10 Typical recovered charge vs.
rate of fall of forward current.
104
85FD(R), 200 to 600V
103
102
10
lF = 265A
lF = 50A
lF = 1A
T J= 125°C
= 25°C
TJ
1
1
4 10
40 100
Rate of fall of forward current (A/µs)
Fig .12 Typical recovered charge vs.
rate of fall of forward current.
105
800 to 1200V
104
103
102
lF = 265A
lF = 50A
lF = 1A
T J= 125°C
T J= 25°C
10
1
4 10
40 100
Rate of fall of forward current (A/µs)
Device code 150 FD R 10 M A
www.nellsemi.com
1 2 34 5 6
1 - Current rating, 150 = 150A
2 - FD = Fast Recovery Diode
3 - None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
4 - Voltage code × 100 = VRRM (see Voltage Ratings table)
5 - DO-8, Ceramic housing type with M12x1.75 stud
and insulated tube
6 - trr Value, A=250 nS Max.,
B=500 nS Max.,
Page 5 of 6