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SEMICONDUCTOR
40EPU06 Series RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 40A / 600V
FEATURES
Ultrafast recovery
Planar FRED Chip
175 °C operating junction temperature
Designed and qualified for industrial level
BENEFITS
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
Reduced parts count
40EPU06
40APU06
Cathode
to base
2
Cathode
to base
2
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
1
Cathode
3
Anode
TO-247AC modified
1
Anode
3
Anode
TO-247AB
PRODUCT SUMMARY
trr
IF(AV)
VR
22 ns
40 A
600 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Operating junction and storage temperatures
SYMBOL
VR
lF(AV)
lFSM
Tj, TStg
TEST CONDITIONS
TC = 110 °C
TC = 25 °C
VALUES
600
40
360
- 55 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(TJ = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
Breakdown voltage
VBR lR = 100µA
600
Forward voltage
Reverse leakage current
Junction capacitance
lF = 40A
VF lF = 80A
lF = 40A, TJ = 125°C
lR VR = VR rated
TJ = 150°C, VR = VR rated
CT VR = 200V
-
-
-
-
-
-
TYP.
-
1.50
1.8
1.20
-
-
36
MAX.
-
1.70
-
-
25
500
-
UNITS
V
µA
pF
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Page 1 of 6

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SEMICONDUCTOR
40EPU06 Series RRooHHSS
Nell High Power Products
DYNAMIC RECOVERY CHARACTERISTICS
(TJ = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 0.5A, IR = 1A, IRR=0.25A (RG#1 CKT)
-
36 45
Reverse recovery time
trr IF = 1A, dIF/dt = 100 A/µs, VR=30V, TJ =25°C
-
22
-
TJ = 25°C
- 25 -
Peak recovery current
Reverse recovery charge
lRRM
Qrr
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
- 165 -
IF = 40 A
-3-
dIF/dt = 200 A/µs
VR = 400 V
-
6
-
- 35 -
- 480 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to ambient
RthJA
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified
Case style TO-247AC
MIN.
-
-
-
-
0.6
(5)
TYP.
-
MAX.
0.67
40
0.3 -
5.5 -
0.2 -
- 1.2
(10)
40EPU06
40APU06
UNITS
ns
A
nC
UNITS
°C/W
g
oz.
N⋅ m
(lbf . in)
Fig.1 Forward current vs. forward voltage
120
100
80
60
TJ =125°C
40
TJ =175°C
20
0
0 0.6 0.9 1.2
TJ =25°C
TJ =-55°C
1.5 1.8 2.1
Anode-to-cathode voltage, VF (V)
Fig.2 Typical values of reverse current vs.
reverse voltage
1000
100
10
1
0.1
0.01
0.001
0.0001
0
TJ=175°
TJ=150°
TJ=125°
TJ=100°
TJ=25°
100 200 300 400 500 600
Reverse voltage, VR (V)
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SEMICONDUCTOR
40EPU06 Series RRooHHSS
Nell High Power Products
Fig.3a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.70
0.60
D = 0.9
0.50
0.40
0.30
0.20
0.7
0.5
0.3
0.10
0
10-5
0.1
0.05
10-4
SINGLE PULSE
10-3
10-2
Rectangular pulse duration (seconds)
Note:
t1
t22
Duty Factor D =t1/t2
Peak TJ = PDM xZθJC+TC
10-1 1.0
Fig.3b Transient thermal impedance model
Junction
temp (°C)
Power
(watts)
Case temperature (°C)
RC MODEL
0.289
0.381
0.00448
0.120
Fig.4 Junction capacitance vs. reverse voltage
200
180
160
140
120
100
80
60
40
20
0
1
10 100 200
reverse voltage, VR (V)
Fig.5 Max. allowable case temperature
Vs. average forward current
180
160
DC
140
Square wave (D = 0.5)
120 Rated VR applied
100
See note (1)
80
0 10 20 25 30 35 40 45 50 60
Average forward current IF(AV) (A)
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Page 3 of 6