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SEMICONDUCTOR
55PT Series RRooHHSS
Stansard SCRs, 55A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
55
600 to 1600
80
Unit
A
V
mA
DESCRIPTION
The 55PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where power handling and power dissipation are
critical, such as solid state relay, welding equipment
and high power motor control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation(2500VRMS).
K
K AG
KAG
TO-220AB (non-Insulated) TO-220AB (lnsulated)
(55PTxxA)
(55PTxxAI)
A
K AG
TO-3P (non-Insulated)
(55PTxxB)
A
KAG
TO-3P (Insulated)
(55PTxxBI)
KA
G
TO-263 (D2PAK)
(55PTxxH)
KA
G
2(A)
TO-247AB (non-Insulated)
(55PTxxC)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
Critical rate of rise of on-state current
VD = 67% VDRM, tp = 200μs, IG = 0.3A
dIG/dt = 0.3A/μs
IT(RMS)
IT(AV)
ITSM
I2t
TO-3P/TO-247AB
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
TO-3P/TO-247AB
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
F =50 Hz
F =60 Hz
tp = 10 ms
Tc=85°C
Tc=80°C
Tc=70°C
Tc=85°C
Tc=80°C
Tc=70°C
t = 20 ms
t = 16.7 ms
dI/dt F = 60 Hz
Tj = 125ºC
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
IGM
PGM
PG(AV)
VDRM
VRRM
Tstg
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Operating junction temperature range
Tj
Maximum peak reverse gate voltage VRGM
VALUE
55
35
520
540
1352
150
5
10
2
600 to 1600
- 40 to + 150
- 40 to + 125
5
UNIT
A
A
A
A2s
A/µs
A
W
W
V
ºC
V
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Page 1 of 5

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SEMICONDUCTOR
55PT Series RRooHHSS
ELECTRICAL SPECIFICATIONS
SYMBOL
(TJ = 25 ºC unless otherwise specified)
TEST CONDITIONS
55PT06xx 55PT10xx
55PT08xx 55PT12xx
55PT16xx
IGT
VD = 12V, RL = 33Ω
VGT
Max.
30
40
80
Max.
1.5
VGD VD = VDRM, RL = 3.3KΩ, RGK = 220Ω Tj = 125°C Min.
0.2
IH IT = 500mA, Gate open
Max.
80
100 120
IL IG = 1.2×IGT
Max.
100
130
150
dV/dt
VD = 67% VDRM, Gate open
Tj = 125°C Min.
700
1000
1000
VTM IT = 80A, tP = 380µs
Tj = 25°C
Max.
1.6
IDRM
IRRM
VD=VDRM, VR=VRRM
RGK = 220Ω
Tj = 25°C
Tj = 125°C
Max.
Max.
10
6
Vto Threshold Voltage
Tj = 125°C Max.
1.02
Rd Dynamic Resistance
Tj = 125°C Max.
85
Unit
mA
V
V
mA
mA
V/µs
V
µA
mA
V
mΩ
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Junction to case (DC)
Rth(j-a)
Junction to ambient
S=Copper surface under tab
Parameter
D2PAK/TO-220AB/TO-3P/TO-247AB
TO-220AB insulated/TO-3P insulated
S = 1 cm2 TO-263(D2PAK)
TO-220AB/TO-220AB insulated
TO-3P/TO-247AB/TO-3P insulated
VALUE
0.8
0.9
45
60
50
UNIT
°C/W
°C/W
PRODUCT SELECTOR
PART NUMBER
55PTxxA/55PTxxAl
55PTxxH
55PTxxB/55PTxxBI
55PTxxC
600 V
V
V
V
V
VOLTAGE (x x)
800 V 1000 V 1200 V 1600 V
VV
VV
VV
VV
VV
VV
VV
VV
SENSITIVITY
80 mA
80 mA
80 mA
80 mA
PACKAGE
TO-220AB
D2PAK
TO-3P
TO-247AB
ORDERING INFORMATION
ORDERING TYPE
MARKING
55PTxxA
55PTxxA
55PTxxAI
55PTxxAI
55PTxxH
55PTxxH
55PTxxB
55PTxxB
55PTxxBI
55PTxxBI
55PTxxC
55PTxxC
Note: xx = voltage
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PACKAGE
TO-220AB
TO-220AB (insulated)
TO-263(D2PAK)
TO-3P
TO-3P insulated
TO-247AB
WEIGHT
2.0g
2.3g
2.0g
4.3g
4.8g
5g
Page 2 of 5
BASE Q,TY
50
50
50
30
30
30
DELIVERY MODE
Tube
Tube
Tube
Tube
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SEMICONDUCTOR
ORDERING INFORMATION SCHEME
Current
55 = 55A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
16 = 1600V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
B = TO-3P (non-insulated)
BI = TO-3P ( insulated)
C = TO-247AB
H = TO-263 (D2PAK)
55PT Series RRooHHSS
55 PT 06
Fig.1 Maximum power dissipation versus
average on-state current (half cycle)
P(W)
80
70
60
50
40
30
20
10
0
04
lT(AV)(A)
8 12 16 20 24 28 32 36 40
Fig.3 On-state characteristics
(maximum values).
ITM (A)
100
Tj max.
Vo = 1.02 V
Rd = 85 mΩ
Tj=Tj max
10
Tj=25°C
VTM(V)
1
0
0.5 1.0
1.5 2.0
2.5
Fig.2 RMS on-state current versus case
temperature (full cycle)
IT(RMS)
60
55
50
45
40
35
30
25
20
15
10
5
0
0
25
TO-220AB insulated
TO-3P insulated
TO-220AB
TO-263
50 75
TO-3P
TO-247AB
100 125
Fig.4 Surge peak on-state current versus
number of cycles.
ITSM (A)
550
500
450
400
350
300
250
200
150
100
50
0
1
Non repetitive
Tj initial=25°C
t=10ms
Half cycle
Number of cycles
10 100
1000
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Page 3 of 5

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SEMICONDUCTOR
55PT Series RRooHHSS
Fig.5 Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and corresponding
value of l2t .
ITSM (A), l2t (A2s)
10000
dI/dt 150A/µs
1000
ITSM
Tj initial=25°C
I2t
t=10ms
Half cycle
100
0.01
tp (ms)
0.1
1.0
10.0
Fig.6 Relative variations of gate trigger
current, holding current and latching
current versus junction temperature
(typical values)
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
3.0
2.5
2.0
1.5
1.0 lH&lL
0.5
0.0
-40 -20
0
lGT
Tj(°C)
20 40 60
80 100 120 140
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
4.06 (0.160)
3.56 (0.140)
PIN
KAG
16.13 (0.635)
15.87 (0.625)
3.68 (0.145)
3.43 (0.135)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
14.22 (0.560)
13.46 (0.530)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
15.32 (0.603)
14.55 (0.573)
2.79 (0.110)
2.54 (0.100)
2(A)
3(G)
1(K)
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Page 4 of 5

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SEMICONDUCTOR
Case Style
55PT Series RRooHHSS
TO-3P
R 4.60 (0.181)
15.50 (0.610)
15.10 (0.594)
Φ4.17 (0.164)
4.08 (0.160)
4.60 (0.181)
4.40 (0.173)
1.55 (0.061)
1.45 (0.057)
3.65 (0.144)
3.40 (0.134)
21.10 (0.831)
20.40 (0.803)
16.50 (0.650)
15.80 (0.622)
KAG
1.40 (0.055)
1.20 (0.047)
15.60 (0.614)
14.35 (0.565)
5.65 (0.222)
5.40 (0.213)
5.65 (0.222)
5.40 (0.213)
0.70 (0.028)
0.50 (0.020)
2.90 (0.114)
2.70 (0.106)
TO-263(D2PAK)
10.45 (0.411)
9.65 (0.380)
6.22 (0.245)
A
4.83 (0.190)
4.06 (0.160)
9.14 (0.360)
8.13 (0.320)
K AG
15.85 (0.624)
15.00 (0.591)
0.940 (0.037)
0.686 (0.027)
2.67 (0.105)
2.41 (0.095)
5.20 (0.205)
4.95 (0.195)
1.40 (0.055)
1.14 (0.045)
1.40 (0.055)
1.19 (0.047)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.53 (0.021)
0.36 (0.014)
3.56 (0.140)
2.79 (0.110)
TO-247AB
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
16.15 (0.242)
15.49 (0.610)
16.26 (0.640)
5.38 (0.212)
6.20 (0.244)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
20.80 (0.819)
21.46 (0.845)
KA
4.50 (0.177)Max
15.40 (0.606)
14.30 (0.560)
1.01 (0.040)
1.40 (0.055)
(TYP.)
5.45 (0.215)
3.55 (0.138)
3.81 (0.150)
G
2.87 (0.113)
3.12 (0.123)
1.65 (0.065)
(TYP.)
2.13 (0.084)
5.45 (0.215)
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Page 5 of 5
RoHS
2(A)
3(G)
1(K)