60EPU12.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 60EPU12 데이타시트 다운로드

No Preview Available !

SEMICONDUCTOR
60EPU12 Series RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode
60A / 1200V
FEATURES
Ultrafast recovery
150 °C operating junction temperature
Designed and qualified for industrial level
Planar FRED Chip
BENEFITS
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION/APPLICATIONS
Anti-parallel diode for switching mode power
supply and inverters.
Free wheeling diode for motor controllers
and inverters.
Snubber diode
Uninterruptible power supply (UPS)
HF welder
Induction heating
High speed rectifiers
60EPU12
60APU12
Cathode
to base
2
Cathode
to base
2
1
Cathode
3
Anode
TO-247AC modified
PRODUCT SUMMARY
trr
IF(AV)
VR
1
Anode
3
Anode
TO-247AB
45 ns
60 A
1200 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperatures
SYMBOL
VR
lF(AV)
lFSM
lFRM
Tj, TStg
TEST CONDITIONS
TC = 60 °C
TC = 25 °C
Square wave, 20 kHz
VALUES
1200
60
570
100
- 55 to 150
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(TJ = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
Breakdown voltage,
blocking voltage
VR lR = 100µA
1200
-
Forward voltage
Reverse leakage current
Junction capacitance
lF = 60A
VF lF = 120A
lF = 60A, TJ = 125°C
lR VR = VR rated
TJ = 150°C, VR = VR rated
CT VR = 200V
- 2.1
--
--
- 1.0
--
- 37
Series inductance
LS
Measure lead to lead 5mm from
package body
- 10
MAX.
-
2.3
3.0
2.0
10
500
-
-
UNITS
V
µA
pF
nH
www.nellsemi.com
Page 1 of 6

No Preview Available !

SEMICONDUCTOR
60EPU12 Series RRooHHSS
Nell High Power Products
DYNAMIC RECOVERY CHARACTERISTICS
(TJ = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 0.5A, IR = 1A, IRR=0.25A (RG#1 CKT)
-
65 70
Reverse recovery time
trr IF = 1A, dIF/dt = 200 A/µs, VR=30V
TJ = 25°C
- 45 -
- 330 -
Peak recovery current
Reverse recovery charge
lRRM
Qrr
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 60 A
dIF/dt = 200 A/µs
VR = 800 V
-
-
-
-
-
430
5
12
650
2800
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to ambient
RthJA
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth
RthCS and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified
Case style TO-247AC
MIN.
-
-
-
-
-
0.6
(5)
TYP.
65
MAX.
0.40
45 40
0.5 -
5.5 -
0.2 -
- 1.2
(10)
60EPU12
60APU12
UNITS
°C/W
g
oz.
N⋅ m
(lbf . in)
www.nellsemi.com
Page 2 of 6

No Preview Available !

SEMICONDUCTOR
60EPU12 Series RRooHHSS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10-5
D = 0.9
0.7
0.5
0.3
0.1
0.05
10-4
Single pulse
10-3
10-2
Rectangular pulse duration (seconds)
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-1
1
Fig.2 Forward current vs. forward voltage
200
180
160
140
120
100
80
60
40
20
0
0
TJ = 175°C
TJ = 125°C
TJ = 25°C
TJ = -55°C
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Anode-to-cathode voltage-VF (V)
Fig.4 Reverse recovery charge vs. current
rate of change
7000
6000
TJ = 125°C
VR = 800V
120A
5000
4000
3000
60A
30A
2000
1000
0
0
200 400 600 800 1000 1200
Current rate of change-diF/dt(A/µs)
Fig3. Reverse recovery time vs. current rate
of change
500
TJ = 125°C
VR = 800V
400
300
120A
200 60A
30A
100
0
0
200 400 600 800 1000 1200
Current rate of change-diF/dt(A/µs)
Fig.5 Reverse recovery current vs. current
rate of change
40
TJ = 125°C
35 VR = 800V
120A
60A
30A
30
25
20
15
10
5
0
0
200 400 600 800 1000 1200
Current rate of change-diF/dt(A/µs)
www.nellsemi.com
Page 3 of 6