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SEMICONDUCTOR
60T Series RRooHHSS
TRIACs, 60A
Snubberless
FEATURES
High current triac
Low thermal resistance with clip bonding
Low thermal resistance for TO-247S
(Super TO-247) package
High commutation capability
60T series are UL certified (File ref: E320098)
Packages are RoHS compliant
APPLICATIONS
The snubberless concept offer suppression of RC
network and it is suitable for applications such as
on/off function in static relays, heating regulation,
induction motor starting circuits, phase control
operation in light dimmers, motor speed controllers,
and similar.
Due to their clip assembly technique, they provide
a superior performance in surge current handling
capabilities.
MAIN FEATURES
SYMBOL
IT(RMS)
VDRM/VRRM
IGT(Q1)
VALUE
60
1000 to 1600
35 to 50
UNIT
A
V
mA
G
A2
A1
TO-247S (non-Insulated)
(60TxxD)
2(A2)
3(G)
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current (full sine wave)
IT(RMS)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
ITSM
I2t Value for fusing
I2t
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
dI/dt
Peak gate current
IGM
Peak gate power dissipation
Average gate power dissipation
PGM
PG(AV)
Storage temperature range
Tstg
Operating junction temperature range
Tj
F =50 Hz
F =60 Hz
tp = 10 ms
TEST CONDITIONS
Tc = 72ºC
t = 10 ms
t = 8.3 ms
t = 10 ms
F =120 Hz, IG = 2xIGT, tr ≤ 100ns Tj =125ºC
Tp =20 µs
Tp =20 µs
Tj =125ºC
Tj =125ºC
Tj =125ºC
VALUE
60
600
628
1800
100
8
10
2
- 40 to + 150
- 40 to + 125
UNIT
A
A
A2s
A/µs
A
W
ºC
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SEMICONDUCTOR
60T Series RRooHHSS
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
SYMBOL
TEST CONDITIONS
QUADRANT
IGT(1)
VGT
VGD
IH(2)
VD = 12 V, RL = 33Ω
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
IT = 500 mA
IL IG = 1.2 IGT
dV/dt(2)
(dI/dt)c(2)
VD = 67% VDRM, gate open ,Tj = 125°C
Without snubber, Tj = 125°C
I - II - III
I - II - III
I - II - III
I - III
II
MAX.
MIN.
MAX.
MAX.
MIN.
60TxxD
BW
50
1.3
0.2
60
80
120
1000
22
Unit
mA
V
V
mA
mA
V/µs
A/ms
STATIC CHARACTERISTICS
SYMBOL
VTM(2)
Vt0(2)
Rd(2)
IDRM
IRRM
ITM = 90 A, tP = 380 µs
Threshold voltage
Dynamic resistance
VD = VDRM
VR = VRRM
TEST CONDITIONS
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
TO-247S
MAX.
MAX.
MAX.
MAX.
VALUE
1.75
0.95
10
20
5
UNIT
V
V
µA
mA
VALUE
0.48
40
UNIT
°C/W
PRODUCT SELECTOR
PART NUMBER
60TxxD-BW
1000 V
V
VOLTAGE (x x)
1200 V
1600 V
VV
SENSITIVITY
TYPE
PACKAGE
50 mA
Snubberless
TO-247S
ORDERING INFORMATION
ORDERING TYPE
MARKING
60TxxD-yy
60TxxD-yy
Note: xx = voltage, yy = sensitivity
PACKAGE
TO-247S
WEIGHT
6.5g
BASE Q,TY DELIVERY MODE
30 Tube
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SEMICONDUCTOR
60T Series RRooHHSS
ORDERING INFORMATION SCHEME
Current
60 = 60A
Triac series
Voltage
10 = 1000V
12 = 1200V
16 = 1600V
60 T 12
Package type
D = TO-247S (non-insulated), Super TO-247
IGT Sensitivity
BW = 50mA Snubberless
D - BW
Fig.1 Maximum power dissipation versus on-state RMS
current (full cycle)
P (W)
80
70
60
50
40
30
20
10
0
0
IT(RMS)(A)
180°
α
α
10 20 30 40 50 60
Fig.2 On-state rms current versus case temperature
(full cycle)
IT(RMS) (A)
70
60
50
40
30
20
10
0
0 25
α=180°
TC(°C)
50 75
100 125
Fig.3 On-state characteristics (maximum values).
Fig.4 Surge peak on-state current versus number
of cycles.
ITM(A)
1000
Tj max.
Vto = 0.95 V
Rd = 10 mΩ
100
10
01
Tj=25°C
Tj=Tj max
2 34
ITSM(A)
700
600
500
Repetitive
400 Tc=70°C
300
200
100
0
51
Non repetitive
Tj initial=25°C
Number of cycles
10 100
1000
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