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STB12NM50N,STD12NM50N,STI12NM50N
STF12NM50N, STP12NM50N
N-channel 500 V, 0.29 , 11 A MDmesh™ II Power MOSFET
TO-220 - DPAK - D2PAK - I2PAK - TO-220FP
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STB12NM50N
t(s)STD12NM50N
cSTI12NM50N
uSTF12NM50N
rodSTP12NM50N
550 V
550 V
550 V
550 V
550 V
0.38
0.38
0.38
0.38
0.38
11 A
11 A
11 A
11 A (1)
11 A
P100% avalanche tested
teLow input capacitance and gate charge
leLow gate input resistance
bsoApplication
- OSwitching applications
t(s)Description
ucThis series of devices is realized with the second
dgeneration of MDmesh™ technology. This
rorevolutionary Power MOSFET associates a new
Pvertical structure to the company’s strip layout to
teyield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
Obsoledemanding high efficiency converters.
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB12NM50N
B12NM50N
STD12NM50N
D12NM50N
STI12NM50N
I12NM50N
STF12NM50N
STP12NM50N
F12NM50N
P12NM50N
Package
D²PAK
DPAK
I²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tape and reel
Tube
Tube
Tube
July 2008
Rev 8
1/19
www.st.com
19

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Contents
Contents
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
)4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
ct(s5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Obsolete Product(s) - Obsolete Produ6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/19

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STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220 / I²PAK
D²PAK / DPAK
TO-220FP
Unit
VDS Drain-source voltage (VGS = 0)
500 V
VGS Gate-source voltage
± 25 V
ID Drain current (continuous) at TC = 25 °C
11
11(1)
A
)ID
t(sIDM(2)
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
6.7
6.7(1)
A
44
44 (1)
A
ucPTOT
roddv/dt(3)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
100
15
25
W
V/ns
PVISO
leteTstg
soTJ
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;TC=25 °C)
Storage temperature
Max. operating junction temperature
-- 2500
-55 to 150
150
V
°C
°C
b1. Limited only by maximum temperature allowed
O2. Pulse width limited by safe operating area
) -3. ISD 11A, di/dt 400A/µs, VDD =80%V(BR)DSS
t(sTable 3. Thermal data
roducSymbol
Parameter
Value
Unit
TO-220 I²PAK DPAK D²PAK TO-220FP
PRthj-case
leteRthj-amb
Obso Rthj-pcb
Thermal resistance junction-
case max
Thermal resistance junction-amb
max
Thermal resistance junction-pcb
max
1.25
62.5 --
-- -- 50
--
30
5 °C/W
62.5 °C/W
-- °C/W
Tl
Maximum lead temperature for
soldering purposes
300 °C
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Ias, Vdd=50V)
5A
350 mJ
3/19

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Electrical characteristics
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min Typ. Max Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
500
V
dv/dt(1)
Peak diode recovery voltage VDD=400 V, ID=11 A,
slope
VGS=10 V
t(s)IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating@125 °C
ducIGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
roVGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
te PRDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 5.5 A
ole1. Characteristic value at turn off inductive load
2
44 V/ns
1 µA
100 µA
100 nA
34
0.29 0.38
V
ObsTable 6. Dynamic
-Symbol
Parameter
Test conditions
t(s)gfs (1) Forward transconductance
ucCiss
dCoss
roCrss
Input capacitance
Output capacitance
Reverse transfer
capacitance
te PCoss
(2)
eq
Equivalent output
capacitance
ole Qg Total gate charge
bs Qgs Gate-source charge
O Qgd Gate-drain charge
VDS =15 V, ID = 5.5 A
VDS =50 V, f=1 MHz,
VGS=0
VGS=0, VDS =0 to 400 V
VDD=400 V, ID = 11 A
VGS =10 V
(see Figure 17)
Min Typ. Max Unit
8S
940 pF
100 pF
10 pF
130 pF
30 nC
6 nC
15 nC
Rg Gate input resistance
f=1 MHz Gate DC Bias=0
test signal level=20 mV
open drain
4.5
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/19

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STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min Typ. Max Unit
VDD=250 V, ID= 5.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
15
15
60
14
ns
ns
ns
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
)ISD
t(sISDM(1)
ducVSD(2)
rotrr
PQrr
teIRRM
oletrr
bsQrr
OIRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD=11 A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A, VDD=100 V
di/dt = 100 A/µs,
(see Figure 18)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD=100 V, Tj=150 °C
(see Figure 18)
11 A
44 A
1.3 V
340 ns
3.5 µC
20 A
420 ns
4 µC
20 A
) -1. Pulse width limited by safe operating area
Obsolete Product(s2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
5/19