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2N6027
2N6028
SILICON
PROGRAMMABLE
UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028
devices are silicon programmable unijunction transistors,
manufactured in an epoxy molded package, designed for
adjustable (programmable) characteristics such as
Valley Current (IV), Peak Current (IP), and Intrinsic
Standoff Ratio ().
TO-92 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Gate-Cathode Forward Voltage
Gate-Cathode Reverse Voltage
Gate-Anode Reverse Voltage
Anode-Cathode Voltage
Peak Non-Repetitive Forward Current (t=10μs)
Peak Repetitive Forward Current (t=20μs, D.C.=1.0%)
Peak Repetitive Forward Current (t=100μs, D.C.=1.0%)
DC Forward Anode Current
DC Gate Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
SYMBOL
VGKF
VGKR
VGAR
VAK
ITSM
ITRM
ITRM
IT
IG
PD
TJ
Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N6027
SYMBOL TEST CONDITIONS
MIN MAX
IGAO
VS=40V
- 10
IGKS
VS=40V
- 50
IP VS=10V, RG=1.0M
- 2.0
IP VS=10V, RG=10k
- 5.0
IV VS=10V, RG=1.0M
- 50
IV VS=10V, RG=10k
70 -
IV VS=10V, RG=200
1.5 -
VT VS=10V, RG=1.0M
0.2 1.6
VT VS=10V, RG=10k
0.2 0.6
VF IF=50mA
- 1.5
VO VB=20V, CC=0.2μF
6.0 -
tr VB=20V, CC=0.2μF
- 80
40
5.0
40
40
5.0
2.0
1.0
150
50
300
-50 to +100
-55 to +150
2N6028
MIN MAX
- 10
- 50
- 0.15
- 1.0
- 25
25 -
1.0 -
0.2 0.6
0.2 0.6
- 1.5
6.0 -
- 80
UNITS
V
V
V
V
A
A
A
mA
mA
mW
°C
°C
UNITS
nA
nA
μA
μA
μA
μA
mA
V
V
V
V
ns
R2 (4-February 2014)

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2N6027
2N6028
SILICON
PROGRAMMABLE
UNIJUNCTION TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Anode
2) Gate
3) Cathode
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R2 (4-February 2014)

No Preview Available !

2N6027
2N6028
SILICON
PROGRAMMABLE
UNIJUNCTION TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
w w w. c e n t r a l s e m i . c o m
R2 (4-February 2014)