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STH140N6F7-2, STH140N6F7-6
N-channel 60 V, 0.0028 Ω typ., 80 A STripFET™ F7
Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STH140N6F7-2
STH140N6F7-6
VDS
60 V
RDS(on) max.
0.0032 Ω
ID
80 A
PTOT
158 W
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STH140N6F7-2
STH140N6F7-6
Table 1: Device summary
Marking
Package
140N6F7
H²PAK-2
140N6F7
H²PAK-6
Packing
Tape and Reel
Tape and Reel
July 2015
DocID025089 Rev 3
This is information on a product in full production.
1/19
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Contents
Contents
STH140N6F7-2, STH140N6F7-6
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 H²PAK-2 package information......................................................... 10
4.2 H²PAK-6 package information......................................................... 13
4.3 H²PAK packing information ............................................................. 16
5 Revision history ............................................................................ 18
2/19 DocID025089 Rev 3

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STH140N6F7-2, STH140N6F7-6
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VDS
VGS
ID(1)
IDM(2)
PTOT
Tstg
Tj
Drain-source voltage
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
Drain current (continuous) at Tcase = 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Storage temperature
Maximum junction temperature
Notes:
(1) Current is limited by package.
(2) Pulse width is limited by safe operating area.
Symbol
Rthj-pcb(1)
Rthj-case
Table 3: Thermal data
Parameter
Thermal resistance junction-pcb
Thermal resistance junction-case
Notes:
(1) When mounted on a 1-inch² FR-4, 2 oz Cu board.
Electrical ratings
Value
60
±20
80
80
320
158
-55 to 175
175
Unit
V
V
A
A
W
°C
Value
35
0.95
Unit
°C/W
DocID025089 Rev 3
3/19

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Electrical characteristics
STH140N6F7-2, STH140N6F7-6
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
VGS = 0 V, VDS = 60 V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 60 V,
Tcase = 125 °C
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = +20 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
Min. Typ.
60
Max. Unit
V
1
µA
100
100 nA
2 4V
0.0028 0.0032 Ω
Symbol
Parameter
Ciss Input capacitance
Coss
Output
capacitance
Crss
Reverse transfer
capacitance
Qg Total gate charge
Qgs
Gate-source
charge
Qgd Gate-drain charge
Table 5: Dynamic
Test conditions
Min. Typ. Max. Unit
- 3100 -
VDS = 25 V, f = 1 MHz, VGS = 0 V
- 1520 -
pF
- 193
-
- 55
VDD = 30 V, ID = 80 A, VGS = 10 V (see
Figure 14: "Gate charge test circuit")
-
19
- 18
-
- nC
-
Symbol
Parameter
td(on) Turn-on delay time
tr Rise time
td(off) Turn-off delay time
tf Fall time
Table 6: Switching times
Test conditions
VDD = 30 V, ID = 40 A RG = 4.7 Ω,
VGS = 10 V (see Figure 13:
"Switching times test circuit for
resistive load" and Figure 18:
"Switching time waveform")
Min. Typ. Max. Unit
- 24
-
- 68
- 39
-
ns
-
- 20
-
4/19 DocID025089 Rev 3

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STH140N6F7-2, STH140N6F7-6
Symbol
Parameter
VSD(1) Forward on voltage
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
Table 7: Source-drain diode
Test conditions
VGS = 0 V, ISD = 80 A
Electrical characteristics
Min. Typ. Max. Unit
- 1.2 V
ISD = 80 A, di/dt = 100 A/µs,
VDD = 48 V (see Figure 15: "Test
circuit for inductive load switching
and diode recovery times")
- 42.4
- 38.2
- 1.8
ns
nC
A
Notes:
(1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID025089 Rev 3
5/19