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STB7ANM60N,
STD7ANM60N
Automotive-grade N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh™ II
2
Power MOSFETs in D PAK and DPAK packages
Datasheet - production data
Features
TAB
2
3
1
D 2 PAK
TAB
3
1
DPAK
Order codes VDS @ Tjmax RDS(on) max. ID
STB7ANM60N
STD7ANM60N
650 V
0.9 Ω
5A
Designed for automotive applications and
AEC-Q101 qualified
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Figure 1. Internal schematic diagram
' Ć7$%
Applications
Switching applications
Description
* 
6 
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$0Y
Order codes
STB7ANM60N
STD7ANM60N
Table 1. Device summary
Marking
Packages
7ANM60N
2
D PAK
DPAK
Packaging
Tape and reel
December 2013
This is information on a product in full production.
DocID023350 Rev 2
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Contents
Contents
STB7ANM60N, STD7ANM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
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STB7ANM60N, STD7ANM60N
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VDS
VGS
ID
ID
(1)
IDM
PTOT
(2)
dv/dt
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD 5 A, di/dt 400 A/μs, VDD = 80% V(BR)DSS, VDS(Peak) < V(BR)DSS
600
± 25
5
3
20
45
15
- 55 to 150
150
Unit
V
V
A
A
A
W
V/ns
°C
°C
Symbol
Table 3. Thermal data
Parameter
Rthj-case
(1)
Rthj-pcb
Thermal resistance junction-case max
Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4 board, 2oz Cu
Value
D2PAK
DPAK
2.78
35 50
Unit
°C/W
°C/W
Symbol
Table 4. Thermal data
Parameter
Avalanche current, repetitive or not-repetitive (pulse
IAR width limited by Tj max)
Single pulse avalanche energy
EAS
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
Value
2
119
Unit
A
mJ
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Electrical characteristics
2 Electrical characteristics
STB7ANM60N, STD7ANM60N
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
Drain-source
V(BR)DSS breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 250 μA
Static drain-source on-
resistance
VGS = 10 V, ID = 2.5 A
Min. Typ. Max. Unit
600 V
1 μA
100 μA
±100 nA
2 3 4V
0.84 0.9 Ω
4/20
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
- 363 - pF
- 24.6 - pF
- 1.1 - pF
(1) Output equivalent
Coss eq. capacitance
VDS = 0 to 480 V, VGS = 0
- 130 - pF
Intrinsic gate
RG resistance
f = 1 MHz open drain
- 5.4 - Ω
Qg Total gate charge
VDD = 480 V, ID = 5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 16)
- 14 - nC
2.7 - nC
7.7 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 7. Switching times
Test conditions
VDD = 300 V, ID = 2.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
Min. Typ. Max. Unit
- 7 - ns
- 10 - ns
- 26 - ns
- 12 - ns
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STB7ANM60N, STD7ANM60N
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 5 A, VGS = 0
- 5A
- 20 A
- 1.3 V
trr Reverse recovery time
- 213
Qrr Reverse recovery charge
ISD = 5 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 20)
-
1.5
IRRM Reverse recovery current
- 14
ns
μC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/μs
VDD = 60 V, Tj = 150 °C
(see Figure 20)
- 265
- 1.8
- 14
ns
μC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
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