AUIRGS30B60K.pdf 데이터시트 (총 15 페이지) - 파일 다운로드 AUIRGS30B60K 데이타시트 다운로드

No Preview Available !

PD - 96334
AUTOMOTIVE GRADE AUIRGS30B60K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE(on) Non Punch Through IGBT Technology
• 10µs Short Circuit Capability
• Square RBSOA
• Positive VCE(on) Temperature Coefficient
• Maximum Junction Temperature rated at 175°C
• Lead-Free, RoHS Compliant
• Automotive Qualified *
AUIRGSL30B60K
C
G
E
n-channel
VCES = 600V
IC = 50A, TC=100°C
at TJ=175°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.95V
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI
• Excellent Current Sharing in Parallel Operation
D2Pak
TO-262
AUIRGS30B60K AUIRGSL30B60K
GC
E
Absolute Maximum Ratings
Gate
Collector
Emitter
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. These are stress ratings only; and functional operation of the device at these or any other condition
beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
™ICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
VISOL
RMS Isolation Voltage, Terminal to Case, t=1 min.
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
78
50
120
120
2500
±20
370
180
-55 to +175
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
RθJC
Junction-to-Case- IGBT
RθCS
RθJA
Case-to-Sink, flat, greased surface
dÃÃJunction-to-Ambient (PCB Mount, Steady State)
Wt Weight
Min.
–––
–––
–––
–––
Typ.
–––
0.50
–––
1.44
Max.
0.41*
–––
40
–––
Units
°C/W
g
* RθJC (end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C
and is accounted for by the physical wearout of the die attach medium.
www.irf.com
1
10/14/10

No Preview Available !

AUIRGS/SL30B60K
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — — V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.40 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
VCE(on)
Collector-to-Emitter Voltage
— 1.95 2.35
IC = 30A, VGE = 15V, TJ = 25°C
— 2.40 2.75 V IC = 30A, VGE = 15V, TJ = 150°C
— 2.6 2.95
IC = 30A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5 V VCE = VGE, IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -10 — mV/°C VCE = VGE, IC = 1.0mA (25°C-150°C)
gfe Forward Transconductance
— 18 — S VCE = 50V, IC = 50A, PW = 80µs
ICES
Zero Gate Voltage Collector Current
— 5.0 250
VGE = 0V, VCE = 600V
— 1000 2000 µA VGE = 0V, VCE = 600V, TJ = 150°C
— 1830 3000
VGE = 0V, VCE = 600V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V, VCE = 0V
Static or Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 102 153
IC = 30A
Qge Gate-to-Emitter Charge (turn-on)
— 14 21 nC VCC = 400V
Qgc
Gate-to-Collector Charge (turn-on)
— 44 66
VGE = 15V
Eon Turn-On Switching Loss
— 350 620
IC = 30A, VCC = 400V
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
e— 825 955 µJ VGE = 15V, RG = 10, L = 200µH
— 1175 1575
TJ = 25°C
td(on) Turn-On delay time
— 46 60
IC = 30A, VCC = 400V
tr Rise time
td(off)
Turn-Off delay time
tf Fall time
— 28 39 ns VGE = 15V, RG = 10, L = 200µH
— 185 200
TJ = 25°C
— 31 40
Eon Turn-On Switching Loss
— 635 1085
IC = 30A, VCC = 400V
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
td(on) Turn-On delay time
e— 1150 1350 µJ VGE = 15V, RG = 10, L = 200µH
— 1785 2435
TJ = 150°C
— 46 60
IC = 30A, VCC = 400V
tr Rise time
— 28 39 ns VGE = 15V, RG = 10, L = 200µH
td(off)
Turn-Off delay time
— 205 235
TJ = 150°C
tf Fall time
LE Internal Emitter Inductance
Cies Input Capacitance
— 32 42
— 7.5 — nH Measured 5mm from package
— 1750 —
VGE = 0V
Coes Output Capacitance
— 160 — pF VCC = 30V
Cres
RBSOA
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
— 60 —
FULL SQUARE
f = 1.0MHz
TJ = 150°C, IC = 120A, Vp = 600V
SCSOA
Short Circuit Safe Operating Area
VCC=500V,VGE = +15V to 0V,RG =10
10 — — µs TJ = 150°C, Vp = 600V, RG = 10
VCC=360V,VGE = +15V to 0V
ISC (Peak) Peak Short Circuit Collector Current
— 200 — A
Ref.Fig.
5,6,7
8,9,10
8,9,10
11
Ref.Fig.
17
CT1
CT4
CT4
CT4
12,14
WF1,WF2
13,15
CT4
WF1
WF2
16
4
CT2
CT3
WF3
WF3
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 28µH, RG = 22Ω.
‚ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ Energy losses include "tail" and diode reverse recovery.
2 www.irf.com

No Preview Available !

AUIRGS/SL30B60K
Qualification Information
Qualification Level
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Moisture Sensitivity Level
Machine Model
D2 PAK
TO-262
ESD
Human Body Model
Charged Device Model
RoHS Compliant
MSL1 †††
(per IPC/JEDEC J-STD-020)
N/A
Class M4 (400V)
AEC-Q101-002
Class H2 (4000V)
AEC-Q101-001
Class C4 (1000V)
AEC-Q101-005
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Higher MSL ratings may be available for the specific package types listed here. Please
contact your International Rectifier sales representative for further information.
www.irf.com
3

No Preview Available !

AUIRGS/SL30B60K
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
100
10
1
0.1
1
4
1000
10 µs
100
100 µs
1ms
DC
10
100
1000
10000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJ 150°C
10
1
10
100
VCE (V)
1000
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
www.irf.com

No Preview Available !

AUIRGS/SL30B60K
60
VGE = 18V
50 VGE = 15V
VGE = 12V
40 VGE = 10V
VGE = 8.0V
30
20
10
0
012345
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
60
VGE = 18V
50 VGE = 15V
VGE = 12V
40 VGE = 10V
VGE = 8.0V
30
20
10
0
012345
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
www.irf.com
60
VGE = 18V
50 VGE = 15V
VGE = 12V
40 VGE = 10V
VGE = 8.0V
30
20
10
0
012345
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
5