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V10PM12-M3, V10PM12HM3
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.53 V at IF = 5 A
TMBS® eSMP® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
FEATURES
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 10 A
TJ max.
Package
10 A
120 V
160 A
0.63 V
150 °C
TO-277A (SMPC)
Diode variation
Single die
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF (1)
IF (2)
IFSM
Operating junction and storage temperature range
TJ, TSTG
Notes
(1) Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2) Free air, mounted on recommended copper pad area
V10PM12
10M12
120
10
3.9
160
-40 to +150
UNIT
V
A
A
°C
Revision: 09-Dec-13
1 Document Number: 89937
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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V10PM12-M3, V10PM12HM3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
VR = 90 V
VR = 120 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.60
0.75
0.53
0.63
2.9
2.0
-
4.8
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 5 ms
MAX.
-
0.83
-
0.71
-
-
400
28
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
RJA (1)
RJM (2)
V10PM12
62
4
Notes
(1) Free air mounted on recommended copper pad area; thermal resistance RJA - junction to ambient
(2) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance RJM - junction to mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V10PM12-M3/86A
0.10
86A
V10PM12-M3/87A
0.10
87A
V10PM12HM3/86A (1)
0.10
86A
V10PM12HM3/87A (1)
0.10
87A
Note
(1) Automotive grade
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
11
TM = 122 °C
10
9
8
7
6
5
4 TA = 25 °C
3
2
1 TM Measured
at the Cathode Band Terminal
0
0
25 50
75 100
125 150
Mount Temperature (°C)
9
D = 0.8
8 D = 0.5
D = 0.3
7 D = 0.2
6 D = 0.1
D = 1.0
5
4
3T
2
1
D = tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 09-Dec-13
2 Document Number: 89937
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10 TA = 150 °C
TA = 125 °C
1 TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
V10PM12-M3, V10PM12HM3
Vishay General Semiconductor
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
Junction to Ambient
10
1
0.01
0.1 1
10
t -Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
Revision: 09-Dec-13
3 Document Number: 89937
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000