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DXTN26070CY
70V NPN POWER SWITCHING TRANSISTOR IN SOT89
Features
Mechanical Data
BVCEO > 70V
IC = 2A High Continuous Collector Current
ICM Up to 4A Peak Pulse Current
2W Power Dissipation
Low Saturation Voltage <300 mV @ 1A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Lead.
Solderable per MIL-STD-202, Method 208
Weight: 0.052 grams (Approximate)
SOT89
Top View
C
B
E
Device Symbol
C
Top View
Pin-Out
E
C
B
Ordering Information (Note 4)
Product
DXTN26070CY-13
Compliance
Standard
Marking
1T8
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT89
1T8 = Product Type Marking Code
YWW = Date Code Marking
Y = Last Digit of Year (ex: 5 = 2015)
WW = Week Code 01 - 52
DXTN26070CY
Datasheet Number: DS37664 Rev.1 - 2
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DXTN26070CY
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Pulse Current (Note 5)
ICM
Note 5. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%.
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Symbol
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 10)
Value
PD
RθJA
RθJL
TJ, TSTG
Value
150
70
7
2
4
0.7
1.0
1.5
2.0
178
125
83
60
22
-55 to +150
Unit
V
V
V
A
A
Unit
W
°C/W
°C
ESD Ratings (Note 11)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V 3A
VC
Notes:
6. For a device mounted with the exposed collector pad on minimum recommended pad layout (MRP) 1oz copper that is on a single-sided
1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
7. Same as Note 5, except the device is mounted with the exposed collector pad on 15mm x 15mm 1oz copper.
8. Same as Note 5, except the device is mounted with the exposed collector pad on 25mm x 25mm 1oz copper.
9. Same as Note 5, except the device is mounted with the exposed collector pad on 50mm x 50mm 1oz copper.
10. Thermal resistance from junction to solder-point (on the exposed collector pad).
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
140.0
120.0
100.0
80.0
60.0
40.0
0
1oz copper
2oz copper
500 1000 1500 2000
Copper Area (sqmm)
2500
3
T =25°C
A
2
1
2oz copper
1oz copper
0
0 500 1000 1500 2000 2500
Copper Area (sqmm)
DXTN26070CY
Datasheet Number: DS37664 Rev.1 - 2
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DXTN26070CY
Thermal Characteristics and Derating Information (continued)
1.2 1.0
15mm x 15mm 1oz FR4 PCB
1.0 0.8
0.8
0.6
0.6
0.4
0.4
0.2 0.2
MRP 1oz FR4 PCB
0.00 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
0.00 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
130
120 15mm x 15mm 1oz FR4 PCB
110
100
90
80
70 D=0.5
60
50
40
30
D=0.2
20
Single Pulse
D=0.05
10 D=0.1
1000µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
100
15mm x 15mm 1oz FR4 PCB
Single Pulse
TA=25°C
10
1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Pulse Power Dissipation
1k
180
160 MRP 1oz FR4 PCB
140
120
100 D=0.5
80
60
D=0.2
40
20
1000µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
100
MRP 1oz FR4 PCB
Single Pulse
TA=25°C
10
1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Pulse Power Dissipation
1k
DXTN26070CY
Datasheet Number: DS37664 Rev.1 - 2
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DXTN26070CY
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
150
70
7
-
-
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 12)
Static Forward Current Transfer Ratio
IEBO
hFE
-
120
150
200
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCE(sat)
VBE(on)
VBE(sat)
Cobo
-
-
-
-
Transition Frequency
fT 150
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
ton -
td -
tr -
toff -
ts -
tf -
Note:
12. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
Typ
-
-
8.2
<1
-
<1
260
290
300
150
780
950
10
220
63
33
30
420
380
40
Max
-
-
-
50
10
20
-
-
500
300
-
-
-
-
-
-
-
-
-
-
Unit Test Condition
V IC = 100 µA
V IC = 1mA
V IE = 100 µA
nA VCB = 96V
µA VCB = 96V, TA = +100°C
nA VEB = 5.6V
- IC = 1mA, VCE = 5V
-
-
IC = 10mA, VCE = 2V
IC = 100mA, VCE = 2V
mV IC = 1A, IB = 100mA
mV IC = 1A, VCE = 5V
mV IC = 1A, IB = 50mA
pF
MHz
VCB = 10V, f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
ns VCC=10V, IC =0.5A
IB2 = -IB1 = 25mA
DXTN26070CY
Datasheet Number: DS37664 Rev.1 - 2
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Typical Characteristics (@TA = +25°C, unless otherwise specified.)
DXTN26070CY
1
Tamb=25°C
100m
IC/IB=50
IC/IB=25
10m1m
IC/IB=20
IC/IB=10
IC10mCollect1o0r0Cmurrent (A1 )
V vI
CE(sat) C
500
150°C
400
100°C
300
25°C
200
100 -55°C
VCE=5V
10m 10m 100m 1
10
IC Collector Current (A)
h vI
FE C
1.2
VCE=5V
1.0
25°C
0.8
-55°C
0.6
0.4 150°C
100°C
0.12m
10m 100m
1
IC Collector Current (A)
V vI
BE(on) C
0.4 IC/IB=10
0.3 150°C
100°C
0.2
0.1
01.00m
25°C
-55°C
IC C10o0lmlector Curren1t (A)
V vI
CE(sat) C
1.2 IC/IB=10
1.0 25°C
-55°C
0.8
0.6 150°C
0.4 100°C
0.12m IC10mCollect1o0r0Cmurrent (A1 )
V vI
BE(sat) C
30
25 f = 1MHz
20
15
10
Cobo
5
100m 100m Voltag1e(V) 10
Capacitance v Voltage
DXTN26070CY
Datasheet Number: DS37664 Rev.1 - 2
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