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BD676G, BD676AG,
BD678G, BD678AG,
BD680G, BD680AG,
BD682G, BD682TG
Plastic Medium-Power
Silicon PNP Darlingtons
This series of plastic, medium−power silicon PNP Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
High DC Current Gain
Monolithic Construction
BD676, 676A, 678, 678A, 680, 680A, 682 are complementary
with BD675, 675A, 677, 677A, 679, 679A, 681
BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
VCEO
Vdc
45
60
80
100
Collector-Base Voltage
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
VCB Vdc
45
60
80
100
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEB 5.0 Vdc
IC 4.0 Adc
IB 0.1 Adc
PD
40 W
0.32 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
RqJC
Max
3.13
Unit
°C/W
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4.0 AMP DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLT, 40 WATT
COLLECTOR 2, 4
BASE 3
EMITTER 1
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAMS
YWW
BD6xxG
YWW
BD6xxAG
Y = Year
WW = Work Week
BD6xx = Device Code
xx = 76, 78, 80, 82, or 82T
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 14
Publication Order Number:
BD676/D

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BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 50 mAdc, IB = 0)
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
BVCEO
Vdc
45 −
60 −
80 −
100 −
Collector Cutoff Current
(VCE = Half Rated VCEO, IB = 0)
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO. IE = 0, TC = 100°C)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ICEO
mAdc
− 500
ICBO
mAdc
0.2
2.0
IEBO
mAdc
2.0
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
BD676G, BD678G, BD680G, BD682G
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD676AG, BD678AG, BD680AG
hFE
750
750
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc)
BD678G, BD680G, BD682G
(IC = 2.0 Adc, IB = 40 mAdc)
BD676AG, BD678AG, BD680AG
VCE(sat)
Vdc
2.5
2.8
Base−Emitter On Voltage (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
BD678G, BD680G, BD682G
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD676AG, BD678AG, BD680AG
VBE(on)
Vdc
2.5
2.5
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
hfe
1.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
50
45
40
35
30
25
20
15
10
5.0
0
15
30 45 60 75 90 105 120 135 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
165
5.0
2.0
1.0
0.5
0.2
0.1
0.05
1.0
BONDING WIRE LIMIT
THERMAL LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
TC = 25°C
BD676, 676A
BD678, 678A
BD680, 680A
BD682
2.0 5.0 10 20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
100
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BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
PNP
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
BASE
COLLECTOR
[ 8.0 k [ 120
EMITTER
Figure 3. Darlington Circuit Schematic
ORDERING INFORMATION
Device
BD676G
BD676AG
BD678G
BD678AG
BD680G
BD680AG
BD682G
BD682TG
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
50 Units / Rail
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BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG
PACKAGE DIMENSIONS
TO−225
CASE 77−09
4 ISSUE AC
123
FRONT VIEW
321
BACK VIEW
E
Q
A1
D
P
1 23
L1
A
PIN 4
BACKSIDE TAB
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
MILLIMETERS
DIM MIN MAX
A 2.40 3.00
A1 1.00 1.50
b 0.60 0.90
b2 0.51 0.88
c 0.39 0.63
D 10.60 11.10
E 7.40 7.80
e 2.04 2.54
L 14.50 16.63
L1 1.27 2.54
P 2.90 3.30
Q 3.80 4.20
STYLE 1:
PIN 1.
2., 4.
3.
EMITTER
COLLECTOR
BASE
2X b2
2X e
b
FRONT VIEW
c
SIDE VIEW
ON Semiconductor and
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BD676/D