DCR1560F26.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 DCR1560F26 데이타시트 다운로드

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DCR1560F26
Phase Control Thyristor
DS6041-1 April 2011 (LN28252)
FEATURES
Double Side Cooling
High Surge Capability
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VRRM
V
Conditions
DCR1560F26
DCR1560F24
DCR1560F22
DCR1560F20
2600
2400
2200
2000
Tvj = -40°C to 125°C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM +100V
respectively
Lower voltage grades available.
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
2600 V
1560 A
24000 A
1000 V/µs
200 A/µs
* Higher dV/dt selections available
Outline type code: F
(See Package Details for further information)
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR1560F26
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
Fig. 1 Package outline
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SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Double Side Cooled
IT(AV) Mean on-state current
IT(RMS) RMS value
IT Continuous (direct) on-state current
Test Conditions
Half wave resistive load
-
-
DCR1560F26
Max. Units
1560
2450
2210
A
A
A
SURGE RATINGS
Symbol
Parameter
ITSM Surge (non-repetitive) on-state current
I2t I2t for fusing
Test Conditions
10ms half sine, Tcase = 125°C
VR = 0
Max.
24.0
2.88
Units
kA
MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Rth(j-c)
Rth(c-h)
Tvj
Tstg
Fm
Thermal resistance junction to case Double side cooled
Thermal resistance case to heatsink Double side cooled
Virtual junction temperature
Blocking VDRM / VRRM
Storage temperature range
Clamping force
DC
DC
Min.
-
-
-
-40
18
Max. Units
0.02
0.005
125
140
26
°C/W
°C/W
°C
°C
kN
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SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
DCR1560F26
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open
dI/dt Rate of rise of on-state current
From 67% VDRM to 2000A Repetitive 50Hz
Gate source 30V, 10,
Non-repetitive
tr < 0.5µs, Tj = 125°C
VT
VT(TO)
rT
On-state voltage
Threshold voltage Low level
On-state slope resistance Low level
IT = 1500A, Tcase = 125°C
Tcase = 125°C
Tcase = 125°C
tgd Delay time
VD = 67% VDRM, gate source 30V, 10
tr = 0.5µs, Tj = 25°C
tq Turn-off time
Tj = 125°C, VR = 100V, dI/dt = 10A/µs,
dVDR/dt = 20V/µs linear to 67% VDRM
QS Stored charge
IRR Reverse recovery current
IL Latching current
IT = 2000A, tp = 1000us,Tj = 125°C,
dI/dt =10A/µs,
Tj = 25°C,
-
1000
-
-
-
-
-
-
-
-
-
150
-
200
1000
1.30
0.89
0.27
3.0
300
3200
160
1
IH Holding current
Tj = 25°C,
- 200
mA
V/µs
A/µs
A/µs
V
V
m
µs
µs
µC
A
A
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT Gate trigger voltage
VGD Gate non-trigger voltage
IGT Gate trigger current
IGD Gate non-trigger current
Test Conditions
VDRM = 5V, Tcase = 25°C
At 40% VDRM, Tcase = 125°C
VDRM = 5V, Tcase = 25°C
At 40% VDRM, Tcase = 125°C
Max. Units
3
TBD
300
TBD
V
V
mA
mA
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SEMICONDUCTOR
DCR1560F26
CURVES
10000
9000
8000
7000 VTM EQUATION
6000
5000 VTM = A + Bln (IT) + C.IT+D.IT
4000
3000
2000
1000
0
Tj=25°C
Tj=125°C
012
Instantaneous on-state voltage,VT - (V)
3
Where A = 0.351731
B = 0.0795715
C = 0.000173431
D = 0.00255899
These values are valid for Tj = 125°C
Fig.2 Maximum &minimum on-state characteristics
0.03
Double side cooled
0.02
  Rthjc t
n
i 1
Rthi
1
e
t
i


i τi (s)
Rthi (°C/kW)
1 0.6894
13.267
0.01
2 0.0872
4.05
3 0.0217
1.585
4 0.0043
1.102
0
0.001
0.01 0.1
1
Time ( s )
10 100
Fig.3 Maximum (limit) transient thermal impedance junction to case (°C/W)
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SEMICONDUCTOR
DCR1560F26
3000
2500
2000
1500
1000
500
0
0 400 800 1200
Mean on-state current, IT(AV) - (A)
180
120
90
60
30
1600
Fig.4 On-state power dissipation sine wave
130
120
110
100
90
80
70
60
50
40
d.c.
30 180
20
120
90
10 60
0 30
0 400 800 1200
Mean on-state current, IT(AV) - (A)
1600
Fig.6 Maximum permissible case temperature,
double side cooled rectangular wave
130
120
110
100
90
80
70
60
50
40
30 180
20
120
90
10 60
0 30
0 400 800 1200
Mean on-state current, IT(AV) - (A)
1600
Fig.5 Maximum permissible case temperature,
double side cooled sine wave
3000
2500
2000
1500
1000
500
0
d.c.
180
120
90
60
30
0 400 800 1200
Mean on-state current, IT(AV) - (A)
1600
Fig.7 On-state power dissipation rectangular wave
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