DCR1650C65.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 DCR1650C65 데이타시트 다운로드

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DCR1650C65
Phase Control Thyristor
DS5949-3 January 2014 (LN31253)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
6500V
1650A
22000A
1500V/µs
300A/µs
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
* Higher dV/dt selections available
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VRRM
V
Conditions
DCR1650C65*
DCR1650C60
DCR1650C55
DCR1650C50
6500
6000
5500
5000
Tvj = -40°C to 125°C,
IDRM = IRRM = 300mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
* 6200V @ -400 C, 6500V @ 00 C
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR1650C65
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
Outline type code: C
(See Package Details for further information)
Fig. 1 Package outline
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SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS) RMS value
IT Continuous (direct) on-state current
Test Conditions
Half wave resistive load
-
-
DCR1650C65
Max. Units
1650
2590
2575
A
A
A
SURGE RATINGS
Symbol
Parameter
ITSM Surge (non-repetitive) on-state current
I2t I2t for fusing
Test Conditions
10ms half sine, Tcase = 125°C
VR = 0
Max.
22.0
2.42
Units
kA
MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Rth(j-c)
Thermal resistance junction to case Double side cooled
Single side cooled
Rth(c-h)
Tvj
Tstg
Fm
Thermal resistance case to heatsink Clamping force 37kN
(with mounting compound)
Virtual junction temperature
Blocking VDRM / VRRM
Storage temperature range
Clamping force
DC
Anode DC
Cathode DC
Double side
Single side
-
-
-
-
-
-
-55
33
Max. Units
0.0101
0.0176
0.0239
0.0025
0.005
125
125
41
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
kN
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SEMICONDUCTOR
DCR1650C65
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open
dI/dt Rate of rise of on-state current
From 67% VDRM to 2x IT(AV) Repetitive 50Hz
Gate source 30V, 10,
Non-repetitive
VT(TO)
rT
Threshold voltage Low level
Threshold voltage High level
On-state slope resistance Low level
On-state slope resistance High level
tr < 0.5µs, Tj = 125°C
100A to 1500A at Tcase = 125°C
1500A to 7200A at Tcase = 125°C
100A to 1500A at Tcase = 125°C
1500A to 7200A at Tcase = 125°C
tgd Delay time
VD = 67% VDRM, gate source 30V, 10
tr = 0.5µs, Tj = 25°C
tq Turn-off time
Tj = 125°C, VR = 200V, dI/dt = 1A/µs,
QS Stored charge
dVDR/dt = 20V/µs linear
IT = 2000A, Tj = 125°C, dI/dt 1A/µs,
IL Latching current
Tj = 25°C, VD = 5V
-
-
-
-
-
-
-
-
-
-
2000
-
300
1500
150
300
1.0
1.2
0.615
0.5
3
1200
4500
3
mA
V/µs
A/µs
A/µs
V
V
m
m
µs
µs
µC
A
IH Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
- 300 mA
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SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT Gate trigger voltage
VGD Gate non-trigger voltage
IGT Gate trigger current
IGD Gate non-trigger current
Test Conditions
VDRM = 5V, Tcase = 25°C
At 50% VDRM, Tcase = 125°C
VDRM = 5V, Tcase = 25°C
At 50% VDRM, Tcase = 125°C
DCR1650C65
Max. Units
1.5 V
0.4 V
350 mA
15 mA
CURVES
7000
6000
5000
4000
3000
2000
1000
0
min 125°C
max 125°C
min 25°C
max 25°C
1.0 2.0 3.0 4.0 5.0
Instantaneous on-state voltage VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where A = 0.666848
B = 0.033446
C = 0.000418
D = 0.009666
these values are valid for Tj = 125°C for IT 100A to 7200A
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SEMICONDUCTOR
DCR1650C65
10
8
6
4
2
0
0
180
120
90
60
30
500 1000 1500 2000
Mean on-state current, IT(AV) - (A)
2500
Fig.3 On-state power dissipation sine wave
125
180
120
90
100 60
30
75
50
25
0
0
500 1000 1500 2000
Mean on-state current, IT(AV) - (A)
2500
Fig.5 Maximum permissible heatsink temperature,
double side cooled sine wave
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
180
120
90
60
30
500 1000 1500 2000
Mean on-state current, IT(AV) - (A)
2500
Fig.4 Maximum permissible case temperature,
double side cooled sine wave
16
14
12
10
8
6
4
2
0
0
d .c .
180
120
90
60
1000 2000 3000 4000 5000
Mean on-state current, IT(AV) - (A)
Fig.6 On-state power dissipation rectangular wave
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