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V10D202C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ® eSMP® Series
TO-263AC (SMPD)
K
1
2
Top View
Bottom View
V10D202C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
200 V
IFSM
VF at IF = 5.0 A (TA = 125 °C)
TJ max.
100 A
0.67 V
175 °C
Package
TO-263AC (SMPD)
Diode variations
Dual common cathode
FEATURES
• Trench MOS Schottky technology generation 2
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-263AC (SMPD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Maximum DC reverse voltage
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VDC
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
V10D202C
200
10
5
160
100
10 000
-40 to +175
UNIT
V
A
V
A
V/μs
°C
Revision: 10-Feb-15
1 Document Number: 87746
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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V10D202C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 2.5 A
IF = 5 A
IF = 2.5 A
IF = 5 A
Reverse current at rated VR per diode
VR = 160 V
VR = 200 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 5 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.75
0.82
0.6
0.67
0.4
0.5
-
1.3
MAX.
-
0.9
-
0.74
-
-
50
5
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10D202C
UNIT
Typical thermal resistance
per diode
per device
RJC
3.5
2.5 °C/W
per device
RJA (1)(2)
58
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA - junction-to -mount
(2) Free air, without heatsink
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT
(g)
TO-263AC (SMPD) V10D202C-M3/I
0.55
TO-263AC (SMPD) V10D202CHM3/I (1)
0.55
Note
(1) AEC-Q101 qualified
PACKAGE CODE BASE QUANTITY
DELIVERY MODE
I
2000/reel
13" diameter plastic tape and reel
I
2000/reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
RthJC =2.5 ƱC/W
10
8
6
RthJA =58 ƱC/W
4
2
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
4.5
D = 0.5 D = 0.8
4.0
3.5
D = 0.3
D = 1.0
3.0
D = 0.2
2.5
2.0 D = 0.1
1.5
T
1.0
0.5
D = tp/T
tp
0.0
0123456
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 10-Feb-15
2 Document Number: 87746
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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100
TA = 175 °C
10
TA = 150 °C
1 TA = 125 °C
TA = 25 °C
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10
1
0.1
0.01
TA = 175 °C
TA = 150 °C
TA = 125 °C
TA = 100 °C
0.001
0.0001
TA = 25 °C
0.00001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
V10D202C
Vishay General Semiconductor
100
Junction to Ambient
10
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
60
Epoxy printed circuit
55 board FR4 copper
thickness = 70 μm
50
45
40
35
30
25 S (cm2)
20
123456789
Copper Pad Areas (cm2)
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
10
0.1 1 10
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
Revision: 10-Feb-15
3 Document Number: 87746
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000