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60CPH03
®
60CPH03
Pb
Pb Free Plating Product
80 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-3PN/TO-3PB
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
Anode
GENERAL DESCRIPTION
60CPH03 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
V RRM
I F(AV)
I F(RMS)
I FSM
PD
TJ
T STG
Torque
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
TC=110°C, Per Diode
TC=110°C, Per Package
TC=110°C, Per Diode
TJ=45°C, t=10ms, 50Hz, Sine
RecommendedM3
400
400
40
80
56
400
156
-40 to +150
-40 to +150
1.1
V
V
A
A
A
A
W
°C
°C
N·m
R θJC
Thermal Resistance
Junction-to-Case
0.8 °C /W
Weight
ELECTRICAL CHARACTERISTICS
6.0 g
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IRM Reverse Leakage Current
VR=400V
VR=400V, TJ=125°C
-- -- 10 µA
-- -- 150 µA
VF Forward Voltage
I F =40A
IF=40A, TJ=125°C
-- 1.3 1.8
-- 1.1
V
V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 22 --
ns
trr Reverse Recovery Time
VR=200V, IF=40A
-- 52 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 4.5 --
A
trr Reverse Recovery Time
VR=200V, IF=40A
-- 71 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 9 -- A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/

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60CPH03
®
120
100
80
60
TJ =125°C
40
TJ =25°C
20
0
0 0.3 0.6 0.9 1.2 1.5
VFV
Fig1. Forward Voltage Drop vs Forward Current
50
VR=200V
TJ =125°C
40
IF=80A
30
20
10
IF=40A
IF=20A
0
0 200 400 600 800 1000
diF/dtA/μs
Fig3. Reverse Recovery Current vs diF/dt
1.2
1
0.8
trr
0.6
IRRM
0.4
Qrr
0.2
0
0 25 50 75 100 125 150
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
150
120
IF=80A
90
VR=200V
TJ =125°C
60
IF=40A
30 IF=20A
0
0 200 400 600 800 1000
diF/dtA/μs
Fig2. Reverse Recovery Time vs diF/dt
600
VR=200V
TJ =125°C
500
400
IF=80A
300
IF=40A
IF=20A
200
100
0
0 200 400 600 800 1000
diF/dtA/μs
Fig4. Reverse Recovery Charge vs diF/dt
10
1
10-1
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-310-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/3
http://www.thinkisemi.com/

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60CPH03
®
IF trr
dIF/dt
Qrr
IRRM
0.9 IRRM
0.25 IRRM
Fig7. Diode Reverse Recovery Test Circuit and Waveform
Dimensions in Millimeters
Fig8. Package Outline
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 3/3
http://www.thinkisemi.com/