S-LBC817-16LT1G.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 S-LBC817-16LT1G 데이타시트 다운로드

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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC817-16LT1G
LBC817-25LT1G
LBC817-40LT1G
S-LBC817-16LT1G
S-LBC817-25LT1G
S-LBC817-40LT1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V CEO
V CBO
V EBO
Collector Current — Continuous I C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
3
1
2
SOT–23
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC817–16LT1G = 6A; LBC817–25LT1G = 6B; LBC817–40LT1G = 6C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = 10 µA)
Emitter–Base Breakdown Voltage
(I E = 1.0 µA)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CES
V (BR)EBO
I CBO
45
50
5.0
Typ Max Unit
— —V
— —V
— —V
— 100 nA
— 5.0 µA
Rev.O 1/10

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LESHAN RADIO COMPANY, LTD.
LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G
S-LBC817-16LT1G S-LBC817-25LT1G S-LBC817-40LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C= 100 mA, V CE = 1.0 V)
LBC817–16
LBC817–25
LBC817–40
(I C = 500 mA, V CE = 1.0 V)
Collector–Emitter Saturation Voltage
(I C = 500 mA, I B = 50 mA)
Base–Emitter On Voltage
( I C = 500 mA, V CE = 1.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz)
Output Capacitance
(V CB = 10 V, f = 1.0 MHz)
h FE
V CE(sat)
V BE(on)
fT
C obo
100 — 250
160 — 400
250 — 600
40 — —
— — 0.7 V
— — 1.2 V
100 — — MHz
— 10 — pF
ORDERING INFORMATION
Device
LBC817-16LT1G
LBC817-16LT3G
LBC817-25LT1G
LBC817-25LT3G
LBC817-40LT1G
LBC817-40LT3G
Marking
6A
6A
6B
6B
6C
6C
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Rev.O 2/10

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LESHAN RADIO COMPANY, LTD.
LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G
S-LBC817-16LT1G S-LBC817-25LT1G S-LBC817-40LT1G
300
150°C
200 25°C
100 55°C
TYPICAL CHARACTERISTICS LBC81716LT1G
VCE = 1 V
1
IC/IB = 10
0.1
150°C
25°C
55°C
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 10
0.9
0.8
0.7
55°C
25°C
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9
55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector
Current
1
Rev.O 3/10

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LESHAN RADIO COMPANY, LTD.
LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G
S-LBC817-16LT1G S-LBC817-25LT1G S-LBC817-40LT1G
TYPICAL CHARACTERISTICS LBC81716LT1G
1.0
TJ = 25°C
0.8
0.6
0.4 IC = 10 mA 100 mA 300 mA
500 mA
0.2
0
0.01
0.1 1 10
IB, BASE CURRENT (mA)
Figure 5. Saturation Region
100
+1
qVC for VCE(sat)
0
-1
-2 qVB for VBE
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 6. Temperature Coefficients
100
Cib
10
Cob
1
0.1 1 10 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
Rev.O 4/10

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LESHAN RADIO COMPANY, LTD.
LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G
S-LBC817-16LT1G S-LBC817-25LT1G S-LBC817-40LT1G
TYPICAL CHARACTERISTICS LBC817-25LT1G
500
150°C
400
300 25°C
200
55°C
100
VCE = 1 V
1
IC/IB = 10
0.1
25°C
150°C
55°C
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 8. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 10
0.9
55°C
25°C
0.8 150°C
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
1000
VCE = 1 V
TA = 25°C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9 55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Voltage vs. Collector
Current
100
10
0.1
1
10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
Rev.O 5/10